RA02M8087MD-101 [MITSUBISHI]
RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO; 符合RoHS标准， 806-869MHz 34dBm 7.2V ， 2级放大器。用于便携式无线电
| 型号： | RA02M8087MD-101 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO |
| 文件： | 总7页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA02M8087MD
RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
BLOCK DIAGRAM
The RA02M8087MD is a 34 dBm output RF MOSFET
2
4
3
Amplifier Module for 7.2 volt portable radios that operate in the
806 to 869 MHz range.
1
5
6
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
1
RF Input (P )
in
• Pout>34dBm @ VDD=7.2V, Pin=16dBm
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1）
Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) ,
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2）
4 Drain Voltage (VDD), Battery
• ηT>30%
@ VDD=7.2V, Pout=34dBm (Pin adjust.),
Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
• IMD3<-26dBc @ VDD=7.2V, Pout (average) =31dBm (Pin adjust.)
Two tone test at 1KHz separation
5 RF Output (Pout)
6 RF Ground (Case)
Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
• Broadband Frequency Range: 806-869MHz
PACKAGE CODE: H46S
• Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
RoHS COMPLIANT
• RA02M8087MD-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA02M8087MD-101
RA02M8087MD
31 Jan 2007
MITSUBISHI ELECTRIC
1/7
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VGG1
VGG2
Pin
Drain Voltage
Gate Voltage
Gate Voltage
Input Power
Output Power
VGG<3.5V
9.2
V
V
VDD<7.2V, Pin=0mW
VDD<7.2V, Pin=0mW
4
4
100
V
mW
W
f=806-869MHz,
ZG=ZL=50Ω
Pout
5
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
-30 to +90
-40 to +110
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f
Frequency Range
806
869
MHz
VDD=7.2V,Pin(Single Carrier)=+16dBm,
Idq1=20mA(Vgg1 adjust.),
Pout
Output Power
34
dBm
Idq2=300mA(Vgg2 adjust.)
Total Efficiency
2nd Harmonic
Input VSWR
Gate Current
30
%
dBc
—
ηT
2fo
ρin
VDD=7.2V,Pout (Single Carrier) =34dBm (,Pin adjust.),
Idq1=20mA(Vgg1 adjust.),
-30
Idq2=300mA(Vgg2 adjust.)
5.8:1
IGG
1
mA
3rd Inter Modulation
Distortion
5th Inter Modulation
Distortion
V
DD=7.2V,Pout (average)=31dBm(Pin adjust.),
IMD3
IMD5
-26
-30
dBc
dBc
Idq1=20mA(Vgg1 adjust.),
Idq2=300mA(Vgg2 adjust.) ,
Two tone test at 1KHz separation
VDD=7.2V,Pout (Single Carrier)=34dBm(Pin adjust.),
Across specified frequency range
Idq1=20mA(Vgg1 adjust.),
GV
—
Gain Variation
Stability
0
4
dB
—
Idq2=300mA(Vgg2 adjust.)
Vdd=6.0/7.2/9.2V,
Idq1=20mA(Vgg1 adjust),
Idq2=300mA(Vgg2 adjust) ,
Po(Single Carrier)=15-34dBm(Pin control)
No parasitic oscillation
LOAD VSWR=2:1(All Phase),Zg=50Ω
Vdd=9.2V, Pout(Single Carrier)=34dBm (Pin adjust.),
LOAD VSWR=2:1(All Phase),Zg=50Ω,
Idq1=20mA(Vgg1 adjust.@Vdd=7.2V),
Idq2=300mA(Vgg2 adjust.@Vdd=7.2V)
—
Load VSWR Tolerance
No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
RA02M8087MD
31 Jan 2007
MITSUBISHI ELECTRIC
2/7
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
RA02M8087MD
IMD3,IMD5 vs. Po
RA02M8087MD
Effi vs. Po
Tc=+25deg.C, Vdd=7.2V
f=806MHz,
Tc=+25deg.C, Vdd=7.2V
f=806MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
Idq 1st stager=20mA
Idq Final Stage=300mA
0
50
45
IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)
-10
-20
-30
-40
-50
-60
-70
Gp
40
35
30
25
20
15
10
5
Effi
0
10
15
20
25
30
35
40
15
15
15
15
20
20
20
25
30
35
35
35
35
40
40
40
Po(single carrier)(dBm)
Po(2tone average)(dBm)
RA02M8087MD
IMD3,IMD5 vs. Po
RA02M8087MD
Effi vs. Po
Tc=+25deg.C, Vdd=7.2V
f=824MHz,
Tc=+25deg.C, Vdd=7.2V
f=824MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
Idq 1st stager=20mA
Idq Final Stage=300mA
0
-10
-20
-30
-40
-50
-60
-70
50
45
40
35
30
25
20
15
10
5
IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)
Gp
Effi
0
10
15
20
25
30
35
40
25
30
Po(single carrier)(dBm)
Po(2tone average)(dBm)
RA02M8087MD
IMD3,IMD5 vs. Po
RA02M8087MD
Effi vs. Po
Tc=+25deg.C, Vdd=7.2V
f=851MHz,
Tc=+25deg.C, Vdd=7.2V
f=851MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
Idq 1st stager=20mA
Idq Final Stage=300mA
0
-10
-20
-30
-40
-50
-60
-70
50
45
40
35
30
25
20
15
10
5
IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)
Gp
Effi
0
10
15
20
25
30
35
40
25
30
Po(single carrier)(dBm)
Po(2tone average)(dBm)
RA02M8087MD
IMD3,IMD5 vs. Po
RA02M8087MD
Effi vs. Po
Tc=+25deg.C, Vdd=7.2V
f=869MHz,
Tc=+25deg.C, Vdd=7.2V
f=869MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA
Idq 1st stager=20mA
Idq Final Stage=300mA
0
-10
-20
-30
-40
-50
-60
-70
50
45
40
35
30
25
20
15
10
5
Gp
Effi
IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)
0
10
15
20
25
30
35
40
20
25
30
40
Po(single carrier)(dBm)
Po(2tone average)(dBm)
RA02M8087MD
31 Jan 2007
MITSUBISHI ELECTRIC
3/7
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
OUTLINE DRAWING (mm)
30±0.2
26.6±0.2
21.2±0.2
(1.7)
(4.4)
2-R1.5±0.1
⑥
① ②
③
④
⑤
φ0.45±0.15
6.1±1
9.9±1
13.7±1
18.8±1
23.9±1
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA02M8087MD
31 Jan 2007
MITSUBISHI ELECTRIC
4/7
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
TEST BLOCK DIAGRAM (TWO TONE)
TEST BLOCK DIAGRAM (SINGLE CARRIER)
1 RF Input (Pin)
2 Gate Voltage (VGG1
)
)
3 Gate Voltage (VGG2
4 Drain Voltage (VDD)
5 RF Output (Pout)
6 RF Ground (Case)
RA02M8087MD
31 Jan 2007
MITSUBISHI ELECTRIC
5/7
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
EQUIVALENT CIRCUIT
3
2
4
5
6
1
1 RF Input (Pin)
2 Gate Voltage (VGG1
)
)
3 Gate Voltage (VGG2
4 Drain Voltage (VDD)
5 RF Output (Pout)
6 RF Ground (Case)
RA02M8087MD
31 Jan 2007
MITSUBISHI ELECTRIC
6/7
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA02M8087MD
Output Power Adjust.:
Depending on linearity, the following two methods are recommended to adjust. the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
b) Linear modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module.
b) Is the load impedance ZL=50Ω.
c) Is the source impedance ZG=50Ω.
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures
are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or
mishap.
RA02M8087MD
31 Jan 2007
MITSUBISHI ELECTRIC
7/7
相关型号：
©2020 ICPDF网 联系我们和版权申明