RA08N1317M-502_技术文档

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for

9.6-volt portable radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the

2

3

enhancement-mode MOSFET transistors. Without the gate voltage

(V_GG=0V), only a small leakage current flows into the drain and the

RF input signal attenuates up to 60 dB. The output power and drain

current increase as the gate voltage increases. With a gate

voltage around 2.5V (minimum), output power and drain current

increases substantially. The nominal output power becomes

available at 3V (typical) and 3.5V (maximum).

1

4

5

This module is designed for non-linear FM modulation, but may also be

used for linear modulation by setting the drain quiescent current with

the gate voltage and controlling the output power with the input power.

1

2

3

4

5

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

FEATURES

• Enhancement-Mode MOSFET Transistors

RF Output (P_out

)

RF Ground (FIN)

(I_DD

• P_out>8W @ V_DD=9.6V, V_GG=3.5V, P_in=20mW

_T>50% @ P_out=8W (V_GGcontrol), V_DD=9.6V, P_in=20mW

0

@ V_DD=9.6V, V_GG=0V)

•

• Broadband Frequency Range: 135-175MHz

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain current with

the gate voltage and controlling the output power with the input power

PACKAGE CODE: H46S

RoHS COMPLIANCE

• RA08N1317M is a RoHS compliant products.

• This product include the lead in the Glass of electronic parts and

the lead in electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA08N1317M-502

SUPPLY FORM

Antistatic tray,

50 modules/tray

Publication Date : Dec. 2018

1

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

MAXIMUM RATINGS

(T_case=+25°C, unless otherwise specified)

CONDITIONS

SYMBOL PARAMETER

RATING

UNIT

V_DD

V_GG

I_DD

Drain DC Supply Voltage

V_GG=0V, P_in=0W

16

V

Drain DC Supply Voltage

Gate DC Supply Voltage

Total Current

13.2

V

-

_GG≦3.5V, Z_L=50

4

3.5

V

_DD≦9.6V, P_in≦20mW

A

P_in

Input Power

30

mW

W

°C

f=135-175MHz, V_GG≦3.5V

P_out

Output Power

10

Z_G=Z_L=50

T_case(OP)Operation Case Temperature Range

T_stgStorage Temperature Range

-30 to +90

-40 to +110

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T_case=+25°C, Z_G=Z_L=50 , unless otherwise specified)

CONDITIONS MIN TYP MAX UNIT

SYMBOL PARAMETER

f

Frequency Range

Output Power

Total Efficiency

2^ndHarmonic

135

-

175

-

MHz

W

P_out

8

50

-

V_DD=9.6V, V_GG=3.5V, P_in=20mW

-

%

T

2f₀

3f₀

-25

-30

4.4:1

300

dBc

—

P_out=8W (V_GGcontrol),

V_DD=9.6V, P_in=20mW

3^rdHarmonic

-

Input VSWR

-

in

I_DD

Leakage Current

V_DD=16V, V_GG=0V, P_in=0W

-

μA

V_DD=13.2V, P_in=20mW, P_out=8W (V_GGcontrol),

Load VSWR=20:1 (All Phase)

—

Load VSWR Tolerance

Stability

No degradation or destroy

—

No parasitic oscillation

more than -60dBc

V_DD=4.8/9.6/12.5/13.2V, P_in=10/20/30mW,

P_out≦8W (V_GGcontrol), Load VSWR=4:1(All Phase)

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Dec. 2018

2

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50 , unless otherwise specified)

Publication Date : Dec. 2018

3

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50 , unless otherwise specified)

Publication Date : Dec. 2018

4

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50 , unless otherwise specified)

Publication Date : Dec. 2018

5

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50 , unless otherwise specified)

Publication Date : Dec. 2018

6

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50 , unless otherwise specified)

Publication Date : Dec. 2018

7

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

OUTLINE DRAWING (mm)

1

2

3

4

5

RF Input (P_in)

Gate Voltage (V_GG

)

Drain Voltage (V_DD)

RF Output (P_out)

RF Ground (FIN)

Publication Date : Dec. 2018

8

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

TEST BLOCK DIAGRAM

Power

Meter

Spectrum

Analyzer

DUT

5

1

2

3

4

Z_G=50

Z_L=50

Power

Meter

Signal

Generator

Pre-

amplifier

Directional

Coupler

Directional

Coupler

Attenuator

C1

C2

C1, C2: 4700pF, 22uF in parallel

-

+

-

DC Power

Supply V_GG

DC Power

Supply V_DD

1

2

3

4

5

RF Input (P_in)

Gate Voltage (V_GG

)

Drain Voltage (V_DD)

RF Output (P_out)

RF Ground (FIN)

EQUIVALENT CIRCUIT

3

2

1

4

5

Publication Date : Dec. 2018

9

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

RECOMMENDATIONS and APPLICATION INFORMATION:

Construction:

This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is

attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated

with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits.

Wire leads soldered onto the alumina substrate provide the DC and RF connection.

Following conditions must be avoided:

a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)

b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)

c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)

d) ESD, surge, overvoltage in combination with load VSWR, and oscillation

ESD:

This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.

Mounting:

Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may

cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later

when thermal expansion forces are added).

A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce

the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.

The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.

M2.6 screws are recommended with a tightening torque of 1.8 to 3.0 kgf-cm.

Soldering and Defluxing:

This module is designed for manual soldering.

The leads must be soldered after the module is screwed onto the heat sink.

The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.

Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in

the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

At P_out=8W, V_DD=9.6V and P_in=20mW each stage transistor operating conditions are:

P_in

(W)

P_out

(W)

R_th(ch-case)

(°C/W)

V_DD

(V)

I_DD

@

_T=50%

(A)

Stage

1^st

2^nd

0.02

1.5

8.0

4.5

2.4

0.28

9.6

1.38

The channel temperatures of each stage transistor T_ch= T_case+ (V_DDx I_DD- P_out+ P_in) x R_th(ch-case)are:

T_ch1= T_case+ (9.6V x 0.28A – 1.5W + 0.02W) x 4.5°C/W

T_ch2= T_case+ (9.6V x 1.38A – 8.0W + 1.5W) x 2.4°C/W

= T_case+ 5.4 °C

= T_case+ 16.2 °C

For long-term reliability, it is best to keep the module case temperature (T_case) below 90°C. For an ambient

temperature T_air=60°C and P_out=8W, the required thermal resistance R_{th (case-air)}= ( T_case- T_air) / ( (P_out

P_in) of the heat sink, including the contact resistance, is:

/ _T) - P_out+

R_th(case-air)= (90°C - 60°C) / (8W/50% – 8W + 0.02W) = 3.74 °C/W

When mounting the module with the thermal resistance of 3.74 °C/W, the channel temperature of each stage transistor is:

T_ch1= T_air+ 35.4 °C

T_ch2= T_air+ 46.2 °C

The 175°C maximum rating for the channel temperature ensures application under derated conditions.

Publication Date : Dec. 2018

10

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

Output Power Control:

By the gate voltage (V_GG).

Around V_GG=2.5V, the output power and drain current increases substantially.

Around V_GG=3V (typical) to V_GG=3.5V (maximum), the nominal output power becomes available.

Oscillation:

To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a

4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.

When an amplifier circuit around this module shows oscillation, the following may be checked:

a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?

b) Is the load impedance Z_L=50 ?

c) Is the source impedance Z_G=50 ?

ATTENTION:

1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility

to receive a burn to touch the operating product directly or touch the product until cold after switch off.

At the near the product,do not place the combustible material that have possibilities to arise the fire.

2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not

leakage the unnecessary electric wave and use this products without cause damage for human and property per normal

operation.

3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric

wave obstacle for equipment.

PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:

1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding

operation of these products from the formal specification sheet. For copies of the formal specification sheets, please

contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for

consumer mobile communication terminals and were not specifically designed for use in other applications.

In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a

quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for

critical communications elements. In the application, which is base station applications and fixed station applications

that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider

the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability

report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact

Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor.

3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate

ESD precautions are required.

4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to

utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case

temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under

extreme conditions.

5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating

into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case

there is risk for burn out of the transistors and burning of other parts including the substrate in the module.

6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch

condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is

recommended that verification of no parasitic oscillation be performed at the completed equipment level also.

7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary

items in the specification sheet.

8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way

from it’s original form.

9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this

data sheet.

Publication Date : Dec. 2018

11

RA08N1317M

RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

10. Design and use environment:

Please avoid use in the place where water or organic solvents can adhere directly to the product and the environments

with the possibility of salt air, caustic gas(hydrosulfuric H₂S, sulfurous gas SO₂, chlorine gas Cl₂, nitrogen dioxide NO₂,

ozone O₃, etc), dust, salinity, etc. Reliability could be markedly decreased and also there is a possibility failures could

result causing a serious accident. Likewise, there is a possibility of causing a serious accident if used in an explosive

gas environment. Please allow for adequate safety margin in your designs.

11. Please refer to the additional precautions in the formal specification sheet.

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors

may lead to personal injury, fire or property damage. Remember to give due consideration to safety when

making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi

semiconductor product best suited to the customer’s application; they do not convey any license under any

intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any

third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in these materials.

•All information contained in these materials, including product data, diagrams, charts, programs and

algorithms represents information on products at the time of publication of these materials, and are subject

to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It

is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized

Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product

listed herein.

The information described here may contain technical inaccuracies or typographical errors. Mitsubishi

Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these

inaccuracies or errors.

Please also pay attention to information published by Mitsubishi Electric Corporation by various means,

including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).

•When using any or all of the information contained in these materials, including product data, diagrams,

charts, programs, and algorithms, please be sure to evaluate all information as a total system before making

a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes

no responsibility for any damage, liability or other loss resulting from the information contained herein.

•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or

system that is used under circumstances in which human life is potentially at stake. Please contact

Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when

considering the use of a product contained herein for any specific purposes, such as apparatus or systems

for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or

in part these materials.

•If these products or technologies are subject to the Japanese export control restrictions, they must be

exported under a license from the Japanese government and cannot be imported into a country other than

the approved destination.

Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of

destination is prohibited.

•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor

for further details on these materials or the products contained therein.

Publication Date : Dec. 2018

12


型号：	RA08N1317M-502
厂家：	Mitsubishi Group
描述：	Narrow Band High Power Amplifier, 高功率电源射频微波
文件：	总12页 (文件大小：1297K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RA08N1317M-502 [MITSUBISHI]

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