RD01MUS1_11 [MITSUBISHI]

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W; 符合RoHS指令,硅MOSFET功率晶体管520MHz的, 1W
RD01MUS1_11
元器件型号: RD01MUS1_11
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
符合RoHS指令,硅MOSFET功率晶体管520MHz的, 1W

晶体 晶体管
PDF文件: 总7页 (文件大小:394K)
下载文档:  下载PDF数据表文档文件
型号参数:RD01MUS1_11参数

RD01MUS1-101

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

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1 MITSUBISHI

RD01MUS2

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

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105 MITSUBISHI

RD01MUS2

Silicon MOSFET Power Transistor 520MHz,1W

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341 MITSUBISHI

RD01MUS2_10

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

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19 MITSUBISHI

RD01MUS2_11

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

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33 MITSUBISHI

RD01MUS2-101,T113

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

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1 MITSUBISHI

RD01MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

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465 MITSUBISHI

RD01MUS2B-101,T113

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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6 MITSUBISHI

RD01MUS2B-T113

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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6 MITSUBISHI

RD01MUS3

RF Small Signal Field-Effect Transistor,

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5 MITSUBISHI

RD02MUS1

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

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135 MITSUBISHI

RD02MUS1

Silicon MOSFET Power Transistor 175MHz,520MHz,2W

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107 MITSUBISHI

RD02MUS1

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | LLCC

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305 ETC

RD02MUS1_10

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

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25 MITSUBISHI

RD02MUS1_11

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

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27 MITSUBISHI