RD05MMP1 [MITSUBISHI]
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W; 符合RoHS指令，硅MOSFET功率晶体管， 941MHz ， 5.5W
| 型号： | RD05MMP1 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W |
| 文件： | 总7页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
(a)
(b)
(b)
DESCRIPTION
OUTLINE DRAWING
7.0+/-0.2
0.2+/-0.05
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
8.0+/-0.2
(d)
FEATURES
2.6+/-0.2
(4.5)
0.95+/-0.2
•High power gain:
INDEX MARK
[Gate]
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•High Efficiency: 43%min. (941MHz)
•No gate protection diode
(c)
TOP VIEW
SIDE VIEW
BOTTOM VIEW
DETAIL
A
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
APPLICATION
For output stage of high power amplifiers in
SIDE VIEW
UNIT:mm
941MHz band mobile radio sets.
NOTES:
DETAIL A
1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25 UNLESS OTHERWISE NOTED)
°C
SYMBOL
VDSS
VGSS
Pch
PARAMETER
CONDITIONS
RATINGS
UNIT
V
Drain to source voltage Vgs=0V
40
Gate to source voltage
Channel dissipation
Input Power
Vds=0V
-5 to +10
V
Tc=25°C
Zg=Zl=50Ω
73
1.4
3
150
W
Pin
W
ID
Drain Current
-
A
°C
Tch
Junction Temperature
Storage temperature
Thermal resistance
-
°C
°C/W
Tstg
-
-40 to +125
1.7
Rth j-c
Junction to case
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)
°C
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN
-
TYP MAX.
I
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
V
V
V
=17V, V =0V
-
-
-
6
-
10
1
uA
uA
V
W
%
DSS
GSS
TH
DS
GS
DS
GS
I
=10V, V =0V
-
DS
V
Pout
=12V, I =1mA
0.5
5.5
43
2.5
-
DS
f=941MHz , V =7.2V
DD
Pin=0.7W,Idq=1.0A
Drain efficiency
-
ηD
V
DD
=9.5V,Po=5.5W(Pin Control)
f=941MHz,Idq=1.0A,Zg=50Ω
VSWRT Load VSWR tolerance
No destroy
-
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
RD05MMP1
1st Jun. 2006
MITSUBISHI ELECTRIC
1/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
8
6
4
2
0
60
50
40
30
20
10
0
Ta=+25°C
*PCB: Glass epoxy (t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(0.5)
Vds=10V
Ids
GM
On PCB with Termal sheet
and Heat-sink
0
40
80
120
160
200
0
1
2
3
4
5
AMBIENT TEMPERATURE Ta(deg:C.)
Vgs(V)
Vds-Ids CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
Vgs=5.0V
Vgs=4.5V
Vgs=4.0V
9
8
7
6
5
4
3
2
1
0
160
140
120
100
80
Ta=+25°C
Ta=+25°C
f=1MHz
60
Vgs=3.5V
Vgs=3.0V
40
20
0
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
Vds(V)
Vds(V)
Vds VS. Coss CHARACTERISTICS
Vds VS. Crss CHARACTERISTICS
160
140
120
100
80
20
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
18
16
14
12
10
8
60
6
40
4
20
2
0
0
0
5
10
Vds(V)
15
20
0
5
10
Vds(V)
15
20
RD05MMP1
1st Jun. 2006
MITSUBISHI ELECTRIC
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=941MHz
Pin-Po CHARACTERISTICS @f=941MHz
20
15
10
5
80
70
60
50
40
30
20
10
0
Ta=25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
Ta=+25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
40
30
20
10
0
80
60
40
20
0
Po
ηd
η
ｄ
Po
Gp
Idd
Ｉｄｄ
0
5
10
15
20
Pin(dBm)
25
30
35
0.0
0.5
1.0
1.5
Pin(W)
Vdd-Po CHARACTERISTICS @f=941MHz
+25°C
Vgs-Ids CHARACTORISTICS 2
8
10
5
-25°C
Ta=25°C
Vds=10V
+75°C
f=941MHz
Tc=-25~+75°C
Po
Pin=0.7W
Idq=1.0A
Zg=ZI=50 ohm
8
6
4
2
0
4
3
2
1
0
6
4
2
0
Idd
0
1
2
3
4
5
4
6
8
10
12
Vgs(V)
Vdd(V)
RD05MMP1
1st Jun. 2006
MITSUBISHI ELECTRIC
3/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TEST CIRCUIT (f=941MHz)
Vgg
Vdd
C1
C2
22uF,50V
19mm
19mm
12pF
W
W
RD05MMP1
941MHz
10pF
L1
13mm
4.7k Ohm
27.5mm
7.5mm
RF-out
120pF
1.5mm
RF-in
1.0mm
23.0mm
1.0mm 1.0mm
120pF
10pF
7pF
4pF
12pF
6pF
Note:Board material= glass-Epoxy Substrate
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm
L1:24.4nH, Enameled wire 5Turns,D:0.23mm,1.37mm(outside diameter)
C1,C2:100pF,1000pF in parallel
W:Line width=1.0mm
RD05MMP1
1st Jun. 2006
MITSUBISHI ELECTRIC
4/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
S11
S21
S12
S22
(mag)
0.841
0.845
0.846
0.848
0.848
0.852
0.858
0.861
0.866
0.872
0.877
0.878
0.880
0.886
0.891
0.897
0.900
0.904
0.905
0.907
0.913
0.918
0.920
0.920
0.925
0.925
0.927
0.931
0.929
0.936
0.936
0.935
0.935
0.933
0.938
0.943
0.943
(ang)
-169.5
-171.5
-172.4
-173.3
-173.7
-174.5
-174.9
-175.2
-175.3
-175.5
-175.5
-176.2
-176.6
-177.1
-177.2
-177.2
-177.3
-177.6
-178.1
-178.6
-178.9
-178.9
-178.9
-179.1
-179.5
179.8
179.5
179.2
179.3
179.2
179.0
178.5
178.1
177.9
177.8
177.8
177.5
(mag)
7.706
6.148
5.024
4.240
3.669
3.227
2.856
2.543
2.279
2.068
1.886
1.735
1.584
1.456
1.343
1.249
1.164
1.086
1.010
0.945
0.889
0.833
0.786
0.741
0.698
0.660
0.625
0.595
0.565
0.537
0.513
0.488
0.469
0.446
0.426
0.404
0.388
(ang)
82.9
78.7
75.0
72.0
69.4
66.5
63.6
60.8
58.6
56.5
54.1
51.5
49.3
47.4
45.9
44.1
42.2
40.3
38.7
37.2
35.8
34.6
33.2
31.9
30.6
29.4
28.3
27.1
26.3
25.4
24.6
23.6
22.6
21.7
20.3
20.3
19.9
(mag)
0.020
0.020
0.019
0.018
0.017
0.017
0.017
0.016
0.015
0.014
0.013
0.013
0.012
0.011
0.011
0.011
0.010
0.010
0.010
0.010
0.011
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.015
0.016
0.017
0.019
0.020
0.023
0.024
0.019
0.019
(ang)
-3.4
-5.0
-6.5
-6.6
-7.1
-8.5
-8.9
-8.7
-8.2
-3.2
-4.3
-3.6
-0.8
2.0
(mag)
0.806
0.817
0.810
0.817
0.822
0.835
0.841
0.838
0.840
0.849
0.858
0.868
0.869
0.868
0.874
0.880
0.886
0.893
0.893
0.897
0.901
0.908
0.911
0.909
0.915
0.916
0.917
0.921
0.925
0.924
0.923
0.921
0.922
0.919
0.906
0.920
0.933
(ang)
-171.5
-172.9
-174.2
-174.7
-175.0
-175.1
-175.3
-175.8
-176.2
-176.4
-176.8
-177.0
-177.4
-177.5
-177.8
-178.2
-178.7
-179.1
-179.0
-179.4
-179.9
179.6
179.2
179.0
178.6
178.4
177.9
177.4
177.0
176.7
176.6
176.3
175.5
175.0
175.4
176.6
176.0
7.3
10.5
16.6
19.9
25.6
30.6
35.9
40.4
46.3
49.2
51.0
57.5
58.5
60.4
62.2
67.1
67.9
68.4
67.0
64.2
52.9
51.8
61.8
RD05MMP1
1st Jun. 2006
MITSUBISHI ELECTRIC
5/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
S11
S21
S12
S22
(mag)
0.878
0.884
0.880
0.877
0.879
0.888
0.888
0.884
0.884
0.891
0.893
0.897
0.897
0.896
0.902
0.903
0.906
0.905
0.906
0.910
0.914
0.915
0.916
0.917
0.919
0.921
0.925
0.924
0.926
0.927
0.929
0.929
0.931
0.930
0.928
0.932
0.937
(ang)
-174.2
-175.6
-176.9
-177.4
-177.7
-178.2
-178.7
-179.1
-179.2
-179.6
-179.7
179.8
179.7
179.6
179.3
178.9
178.7
178.5
178.4
178.2
177.9
177.5
177.3
177.3
177.2
176.9
176.6
176.5
176.3
176.1
175.8
175.6
175.5
175.2
175.2
174.8
174.8
(mag)
7.474
6.046
4.919
4.153
3.636
3.246
2.912
2.598
2.351
2.152
1.995
1.849
1.708
1.580
1.475
1.388
1.308
1.222
1.152
1.086
1.030
0.978
0.928
0.877
0.832
0.798
0.759
0.725
0.694
0.661
0.634
0.611
0.585
0.562
0.539
0.518
0.496
(ang)
85.7
81.9
78.9
77.5
76.1
73.8
71.1
69.0
67.4
66.0
64.1
62.2
60.0
58.5
57.1
55.6
53.7
52.1
50.6
49.4
48.2
46.6
45.1
43.8
43.0
41.7
40.5
39.2
38.3
37.2
36.5
35.5
34.3
33.4
32.6
31.9
31.1
(mag)
0.014
0.014
0.014
0.013
0.013
0.013
0.013
0.012
0.012
0.012
0.012
0.011
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.013
0.013
0.014
0.015
0.015
0.015
0.016
0.016
0.017
0.018
0.019
0.019
0.020
0.021
0.022
0.022
(ang)
4.3
(mag)
0.869
0.865
0.865
0.872
0.873
0.875
0.874
0.869
0.872
0.882
0.884
0.886
0.883
0.883
0.886
0.892
0.893
0.894
0.896
0.898
0.902
0.906
0.906
0.906
0.905
0.908
0.911
0.916
0.916
0.921
0.918
0.917
0.921
0.923
0.928
0.930
0.926
(ang)
-176.3
-176.9
-177.5
-177.9
-178.3
-178.5
-178.6
-178.8
-178.9
-179.2
-179.4
-179.5
-179.3
-179.6
-179.7
180.0
179.9
179.8
179.7
179.6
179.2
179.1
179.0
179.1
178.8
178.5
178.1
177.9
178.0
178.1
177.9
177.4
177.0
176.8
176.9
177.3
177.0
2.9
3.3
4.7
8.8
4.2
7.9
9.1
11.5
13.3
18.1
16.1
20.8
25.7
26.7
30.8
33.2
35.6
38.7
42.5
45.7
46.2
52.5
53.1
55.3
56.8
59.3
59.2
62.2
63.6
64.2
65.1
66.8
66.6
65.2
67.9
68.8
RD05MMP1
1st Jun. 2006
MITSUBISHI ELECTRIC
6/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Warning!
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD05MMP1
1st Jun. 2006
MITSUBISHI ELECTRIC
7/7
相关型号：
RD06HVF1-101
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
MITSUBISHI
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