RD07MUS2B-T512 [MITSUBISHI]

RF Power Field-Effect Transistor,;
RD07MUS2B-T512
元器件型号: RD07MUS2B-T512
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

RF Power Field-Effect Transistor,

PDF文件: 总14页 (文件大小:610K)
下载文档:  下载PDF数据表文档文件
型号参数:RD07MUS2B-T512参数

RD07MVS1

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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113 MITSUBISHI

RD07MVS1

Silicon MOFSET Power Transistor

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372 MITSUBISHI

RD07MVS1

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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72 MITSUBISHI

RD07MVS1_10

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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12 MITSUBISHI

RD07MVS1_11

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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22 MITSUBISHI

RD07MVS1-101

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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34 MITSUBISHI

RD07MVS1-101,T112

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

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0 MITSUBISHI

RD07MVS1B

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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82 MITSUBISHI

RD07MVS1B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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69 MITSUBISHI

RD07MVS1B_10

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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21 MITSUBISHI

RD07MVS1B_11

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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33 MITSUBISHI

RD07MVS1B-101

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 MITSUBISHI

RD07MVS1B-101,T112

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

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0 MITSUBISHI

RD07MVS1-T112

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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58 MITSUBISHI

RD07MVS2

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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62 MITSUBISHI