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元器件品牌
RD07MUS2B-T512
[MITSUBISHI]
RF Power Field-Effect Transistor,;
元器件型号:
RD07MUS2B-T512
生产厂家:
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:
RF Power Field-Effect Transistor,
PDF文件:
总14页 (文件大小:610K)
下载文档:
下载PDF数据表文档文件
型号参数:RD07MUS2B-T512参数
查看货源
RD07MVS1
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MITSUBISHI
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Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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RD07MVS1_10
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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RD07MVS1_11
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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RD07MVS1-101
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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34
MITSUBISHI
RD07MVS1-101,T112
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
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MITSUBISHI
RD07MVS1B
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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MITSUBISHI
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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69
MITSUBISHI
RD07MVS1B_10
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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on line
156
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21
MITSUBISHI
RD07MVS1B_11
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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33
MITSUBISHI
RD07MVS1B-101
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
RD07MVS1B-101,T112
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
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on line
156
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0
MITSUBISHI
RD07MVS1-T112
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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156
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MITSUBISHI
RD07MVS2
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MITSUBISHI
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