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元器件品牌
RM1200DG-90F
[MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
元器件型号：
RM1200DG-90F
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
HIGH POWER SWITCHING USE INSULATED TYPE
大功率开关使用绝缘型
开关 高功率电源
PDF文件：
总5页 (文件大小：556K)
下载文档：
下载PDF数据表文档文件
型号参数：RM1200DG-90F参数
查看货源
RM1200E
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
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156
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8
MCC
RM1200E
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
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156
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9
MCC
RM1200E_11
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
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156
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8
MCC
RM1200E-T
Rectifier Diode,
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156
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0
MCC
RM1200E-TP
Rectifier Diode, 1 Element, 0.5A, 1200V V(RRM), Silicon, DO-214AC, SMAE, 2 PIN
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MCC
RM1200E-TP
Rectifier Diode, 1 Element, 0.5A, 1200V V(RRM), Silicon, DO-214AC, SMAE, 2 PIN
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0
MCC
RM1200HE-66S
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
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23
MITSUBISHI
RM-1205D
0.25 Watt SIP4 & DIP8 Single Output
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156
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7
RECOM
RM-1205DHP
0.25 Watt SIP4 & DIP8 Single Output
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156
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2
RECOM
RM-1205DP
0.25 Watt SIP4 & DIP8 Single Output
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156
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4
RECOM
RM-1205S
0.25 Watt SIP4 & DIP8 Single Output
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156
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17
RECOM
RM-1205S
0.25 Watt SIP4 & DIP8 Single Output
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156
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11
RECOM
RM-1205S/E
0.25 Watt SIP4 Single Output
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156
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0
RECOM
RM-1205S/EH
0.25 Watt SIP4 Single Output
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156
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0
RECOM
RM-1205S/H
CONV DC/DC 0.25W 12VIN 05VOUT
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ETC
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