RM20HA-24F [MITSUBISHI]
Rectifier Diode, 1 Phase, 1 Element, 20A, 1200V V(RRM), Silicon,;
| 型号： | RM20HA-24F |
| 厂家： | 
Mitsubishi Group |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 20A, 1200V V(RRM), Silicon, 快速恢复二极管 局域网 |
| 文件： | 总3页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20HA-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
RM20HA-XXF
• IDC
DC current .................................. 20A
• VRRM Repetitive peak reverse voltage
.............................. 600/1000/1200V
• trr
Reverse recovery time .............0.8µs
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Free wheel use, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
6.35
R2.1
φ4.2
0.8 (K)
(A)
7.0
19.5
30.2
39.0
φ1.7
φ2.4
6.35
φ1.7
φ2.4
(Fig. A)
Fig. A
LABEL
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20HA-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C)
Voltage class
Symbol
VRRM
Parameter
Unit
12
20
24
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
600
720
480
1000
1100
800
1200
1350
960
V
V
V
VDRM
VR (DC)
Symbol
Parameter
DC current
Conditions
Ratings
20
Unit
A
IDC
Resistive load, TC=114°C
IFSM
Surge (non-repetitive) forward current
One half cycle at 60Hz, peak value
Value for one cycle of surge current
400
A
2
2
2
2
I t
I t for fusing
6.7×10
A s
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case
Mounting screw M4
Typical value
V
0.98~1.47
10~15
N·m
kg·cm
g
—
—
Mounting torque
Weight
25
ELECTRICAL CHARACTERISTICS
Limits
Typ.
—
Symbol
Parameter
Test conditions
Unit
Min.
—
Max.
5.0
1.5
0.8
15
IRRM
Repetitive reverse current
Forward voltage
Tj=150°C, VRRM applied
mA
V
—
—
VFM
trr
Tj=25°C, IFM=20A, instantaneous meas.
—
—
Reverse recovery time
Reverse recovery charge
Thermal resistance
µs
1
IFM=20A, di/dt=–50A/µs, VR=300/600V* , Tj=150°C
—
—
Qrr
µC
—
—
1.2
0.8
Rth (j-c)
Rth (c-f)
Junction to case
°C/W
°C/W
—
—
Contact thermal resistance
Case to fin, conductive grease applied
1
*
12 class: VR=300V
20, 24 class: VR=600V
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20HA-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
100 2 3 457 101 2 3 45
2.0
102
7
Tj=25°C
5
1.8
1.6
1.4
3
2
101
7
1.2
1.0
0.8
0.6
0.4
0.2
5
3
2
100
7
5
3
2
10 –1
0
0.6
1.0
1.4
1.8
2.2
10 –3 2 3 45710 –22 3 45 710 –1 2 3 45 7 100
FORWARD VOLTAGE (V)
TIME (s)
RATED SURGE (NON-REPETITIVE)
FORWARD CURRENT
REVERSE RECOVERY CHARACTERISTICS
VS. FORWARD CURRENT (TYPICAL)
2
1
10
10
7
500
450
400
350
300
250
200
di/dt=–50A/µs
=300/600V
7
VR
5
5
T
j
=25°C
=150°C
4
4
T
j
3
2
3
2
I
rr
101
7
100
7
t
rr
5
5
150
100
50
4
4
3
2
3
2
Qrr
10–1
100
0
100
2
3 4 5 7 101
2
3 4 5 7 102
1
2
3 4 5 7 10 20 30405070100
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
VS. –di/dt (TYPICAL)
2
1
10
10
7
I
F
=20A
7
VR
=300/600V
5
5
Tj
=25°C
4
4
Tj
=150°C
3
2
Irr
3
2
101
7
100
7
5
5
4
4
trr
Qrr
3
2
3
2
10–1
100
101
2
3 4 5 7 102
2
3 4 5 7 103
–di/dt (A/µs)
Feb.1999
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