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RM400DG-66S [MITSUBISHI]

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE; 高压二极管模块大功率开关使用绝缘型
RM400DG-66S
型号： RM400DG-66S
厂家： Mitsubishi Group    Mitsubishi Group
描述：

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
高压二极管模块大功率开关使用绝缘型

二极管 开关 高压 高功率电源
文件： 总4页 (文件大小：75K)
中文：  中文翻译
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MITSUBISHI HIGH VOLTAGE DIODE MODULE  
RM400DG-66S  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
High Voltage Diode Module  
RM400DG-66S  
● IF ...................................................................400A  
● VRRM ...................................................... 3300V  
● High Insulated Type  
● 2-element in a Pack  
● AlSiC Baseplate  
APPLICATION  
Traction drives, High Reliability Converters / Inverters, DC choppers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
130 0.5  
4-M8 NUTS  
57 0.25  
57 0.25  
40.4 0.5  
4
3
2
1
4
(K)  
2
(K)  
>PET+PBT<  
3
(A)  
1
(A)  
CIRCUIT DIAGRAM  
34.4 0.5  
6-φ7 MOUNTING HOLES  
61.2 0.5  
16.5 0.3  
Screwing depth  
min. 16.5  
High Voltage Diode Module  
May 2009  
MITSUBISHI HIGH VOLTAGE DIODE MODULE  
RM400DG-66S  
HIGH POWER SWITCHING USE  
High Voltage Diode Module  
INSULATED TYPE  
MAXIMUM RATINGS  
Symbol  
VRRM  
VRSM  
VR(DC)  
IF  
Item  
Conditions  
Ratings  
3300  
3300  
2200  
400  
Unit  
V
V
Repetitive peak reverse voltage Tj = 25 °C  
Non-repetitive peak reverse voltage Tj = 25 °C  
Reverse DC voltage  
Tj = 25 °C  
TC = 25 °C  
V
A
DC forward current  
Tj = 25 °C start, tw = 8.3 ms  
Half sign wave  
IFSM  
I2t  
Surge forward current  
Current-squared, time integration  
Isolation voltage  
3200  
42.7  
A
kA2s  
V
Tj = 25 °C start, tw = 8.3 ms  
Half sign wave  
Charged part to the baseplate  
RMS sinusoidal, 60Hz 1min.  
Viso  
10200  
5100  
Ve  
Partial discharge extinction voltage RMS sinusoidal, 60Hz, QPD ≤ 10PC  
V
–40 ~ +150  
–40 ~ +125  
–40 ~ +125  
Tj  
Junction temperature  
Operating temperature  
Storage temperature  
—
—
—
°C  
°C  
°C  
Top  
Tstg  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
IRRM  
Item  
Conditions  
Unit  
mA  
V
Min  
—
—
—
—
—
—
—
—
Typ  
—
1
Max  
2
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
Repetitive reverse current  
VRM = VRRM  
IF = 400 A  
10  
—
—
—
—
—
—
2.80  
2.70  
1.0  
530  
270  
0.3  
Forward voltage  
(Note 1)  
VFM  
trr  
Reverse recovery time  
µs  
A
VR = 1650 V, IF = 400 A  
di/dt = –1350 A/µs  
Ls=100nH, Tj = 125 °C  
Irr  
Reverse recovery current  
Reverse recovery charge  
Reverse recovery energy (Note 2)  
Qrr  
Erec  
µC  
J/P  
Note 1. It doesn't include the voltage drop by internal lead resistance.  
2. Erec is the integral of 0.1VR x 0.1Irrx dt.  
High Voltage Diode Module  
May 2009  
2
MITSUBISHI HIGH VOLTAGE DIODE MODULE  
RM400DG-66S  
HIGH POWER SWITCHING USE  
High Voltage Diode Module  
INSULATED TYPE  
THERMAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Rth(j-c)  
Item  
Conditions  
Min  
—
Typ  
—
Max  
Junction to case  
(per 1/2 module)  
Thermal resistance  
Contact thermal resistance  
54.0  
K/kW  
K/kW  
Case to Fin, λgrease = 1W/m·K  
D(c-f)=100µm, (per 1/2 module)  
—
48.0  
Rth(c-f)  
—
MECHANICAL CHARACTERISTICS  
Limits  
Symbol  
Mt  
Item  
Conditions  
Unit  
Min  
7.0  
3.0  
—
600  
26  
Typ  
—
Max  
15.0  
6.0  
—
M8: Main terminals screw  
N·m  
N·m  
kg  
Mounting torque  
—
Ms  
M6: Mounting screw  
1.0  
—
m
Mass  
—
—
CTI  
Da  
Comparative tracking index  
Clearance  
Creepage distance  
Internal inductance  
Internal lead resistance  
—
—
—
—
—
—
—
mm  
mm  
nH  
—
44  
56  
Ds  
—
—
—
—
—
LP CE  
RCC’+EE’  
0.27  
Tc = 25 °C  
mΩ  
PERFORMANCE CURVES  
REVERSE RECOVERY ENERGY  
CHARACTERISTICS  
(TYPICAL)  
FORWARD CHARACTERISTICS  
(TYPICAL)  
800  
600  
400  
200  
0
0.5  
0.4  
0.3  
0.2  
0.1  
0
V
R
= 1650V, di/dt = 1350A/µs  
Tj = 125°C, LS = 100nH  
T
T
j
j
= 25°C  
= 125°C  
0
1
2
3
4
5
6
0
200  
400  
600  
800  
(A)  
1000  
FORWARD VOLTAGE V  
F
(V)  
FORWARD CURRENT IF  
High Voltage Diode Module  
May 2009  
3
MITSUBISHI HIGH VOLTAGE DIODE MODULE  
RM400DG-66S  
HIGH POWER SWITCHING USE  
High Voltage Diode Module  
INSULATED TYPE  
REVERSE RECOVERY  
CHARACTERISTICS  
(TYPICAL)  
REVERSE RECOVERY  
SAFE OPERATING AREA  
(RRSOA)  
102  
7
104  
7
1000  
800  
600  
400  
200  
0
V
R
= 1650V, di/dt = 1350A/µs  
V
R
≤ 2200V, di/dt ≤ 1800A/µs  
Tj = 125°C  
T
j
= 125°C, L  
S
= 100nH  
5
5
3
2
3
2
101  
7
103  
7
5
5
Irr  
trr  
3
2
3
2
100  
7
102  
7
5
5
3
2
3
2
101  
10-1  
101  
2
3
4
5
7
102  
2
3
4
5
7
103  
0
1000  
2000  
3000  
4000  
FORWARD CURRENT IF (A)  
REVERSE VOLTAGE VR (V)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTICS  
1.2  
R
th(j–c) = 18K/kW  
1.0  
0.8  
t
i   
n
–
1–exp   
=
t
(t)  
Zth( j –c )  
Σ
Ri  
i=1  
0.6  
0.4  
0.2  
0
1
2
3
4
Ri [K/kW]  
0.0059  
0.0002  
0.0978  
0.0074  
0.6571  
0.0732  
0.2392  
0.4488  
τi [sec]  
10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101  
TIME (s)  
High Voltage Diode Module  
May 2009  
4

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