RM50C1A-16F [MITSUBISHI]
Rectifier Diode, 1 Phase, 2 Element, 50A, 800V V(RRM), Silicon,;
| 型号： | RM50C1A-16F |
| 厂家： | 
Mitsubishi Group |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 50A, 800V V(RRM), Silicon, 快速恢复二极管 局域网 |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
RM50DA/CA/C1A-XXF
• IDC
DC current .................................. 50A
• VRRM Repetitive peak reverse voltage
.. 600/800/1000/1200V
• trr
Reverse recovery time .............0.8µs
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Free wheel use, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5
43.3
16
DA
CA
D1A
R6
φ5.3
8
3–M4
3.5
33
3.5
LABEL
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C)
Voltage class
Symbol
VRRM
Parameter
Unit
12
16*
800
960
640
20*
1000
1100
800
24
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
600
720
480
1200
1350
960
V
V
V
VDRM
VR (DC)
* Order made
Symbol
IDC
Parameter
DC output current
Conditions
Ratings
Unit
A
Resistive load, TC=105°C
50
IFSM
Surge (non-repetitive) forward current
One half cycle at 60Hz, peak value
Value for one cycle of surge current
1000
A
2
2
3
2
I t
I t for fusing
4.2x10
A s
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~150
–40~125
2500
°C
°C
Tstg
Viso
Charged part to case
V
0.98~1.47
10~15
N·m
kg·cm
N·m
kg·cm
g
Main terminal screw M4
—
—
Mounting torque
Weight
1.47~1.96
15~20
Mounting screw M5
Typical value
90
ELECTRICAL CHARACTERISTICS
Limits
Typ.
—
Symbol
Parameter
Test conditions
Unit
Min.
—
Max.
10
IRRM
Repetitive reverse current
Forward voltage
Tj=150°C, VRRM applied
mA
V
—
—
1.5
0.8
30
VFM
trr
Tj=25°C, IFM=50A, instantaneous meas.
—
—
Reverse recovery time
Reverse recovery charge
Thermal resistance
µs
1
IFM=50A, di/dt=–100A/µs, VR=300/600V* , Tj=150°C
—
—
Qrr
µC
—
—
0.6
0.3
Rth (j-c)
Junction to case
°C/W
°C/W
—
—
Rth (c-f)
1
Contact thermal resistance
Case to fin, conductive grease applied
*
12, 16 class: VR=300V
20, 24 class: VR=600V
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVE
MAXIMUM FORWARD CHARACTERISTIC
MAXIMAM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
100 2 3 457 101 2 3
45
103
7
1.0
Tj=25°C
5
3
2
0.8
0.6
0.4
102
7
5
3
2
101
7
5
0.2
0
3
2
100
0.4
10 –3 2 3 45710 –2 2 3 45 710 –1 2 3 45 7 100
0.8
1.2
1.6
2.0
2.4
FORWARD VOLTAGE (V)
TIME (s)
RATED SURGE (NON-REPETITIVE)
FORWARD CURRENT
REVERSE RECOVERY CHARACTERISTICS
VS. FORWARD CURRENT (TYPICAL)
102
102
7
1000
800
600
400
VR=300/600V
di/dt=–100A/µs
7
5
5
Irr
3
2
3
2
Qrr
101
101
7
7
5
5
3
2
100
7
5
3
2
100
7
5
trr
200
0
3
3
Tj=25°C
Tj=150°C
2
2
10 –1
10 –1
100
2
3 4 5 7 101
2
3 4 5 7 102
100 2 3 4 57 101 2 3 45 7 102 2 3 45 7 103
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
VS. –di/dt (TYPICAL)
102
7
5
102
7
5
VR=300/600V
IF=50A
Irr
Tj=25°C
Tj=150°C
3
2
3
2
Qrr
101
101
7
7
5
5
3
2
3
2
100
7
100
7
5
5
trr
3
3
2
2
10 –1
10 –1
100 2 3 4 57 101 2 3 45 7 102 2 3 45 7 103
–di/dt (A/µs)
Feb.1999
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