RM50DA-12S [MITSUBISHI]
Rectifier Diode, 1 Phase, 2 Element, 50A, 600V V(RRM), Silicon,;型号: | RM50DA-12S |
厂家: | Mitsubishi Group |
描述: | Rectifier Diode, 1 Phase, 2 Element, 50A, 600V V(RRM), Silicon, 快速恢复二极管 局域网 |
文件: | 总3页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
RM50DA/CA/C1A-XXS
• IDC
DC current .................................. 50A
• VRRM Repetitive peak reverse voltage
......................300/600V
• trr
Reverse recovery time .............0.4µs
• Insulated Type
APPLICATION
Free wheel use, Welder
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5
43.3
16
CA
C1A
DA
R6
φ5.3
8
3–M4
3.5
33
3.5
LABEL
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Voltage class
Symbol
VRRM
Parameter
Unit
6
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
300
360
240
600
720
480
V
V
V
VDRM
VR
Symbol
Parameter
DC current
Conditions
Ratings
50
Unit
A
IDC
Resistive load, TC=93°C
IFSM
Surge (non-repetitive) forward current
One half cycle at 60Hz, peak value
Value for one cycle of surge current
1000
A
2
2
3
2
I t
I t for fusing
4.2×10
A s
Tj
Junction temperature
Storage temperature
Isolution voltage
–40~150
–40~125
2500
°C
°C
Tstg
Viso
Charged part to case
V
0.98~1.47
10~15
N·m
kg·cm
N·m
kg·cm
g
Main terminal screw M4
—
—
Mounting torque
Weight
1.47~1.96
15~20
Mounting screw M5
Typical value
90
ELECTRICAL CHARACTERISTICS
Limits
Typ.
—
Symbol
Parameter
Test conditions
Unit
Min.
—
Max.
20
IRRM
Repetitive reverse current
Forward voltage
Tj=150°C, VRRM applied
mA
V
—
1.7
—
1.8
0.2
1.5
0.4
4.5
0.6
0.3
VFM
trr
Tj=25°C, IFM=50A, instantaneous meas.
—
Reverse recovery time
Reverse recovery charge
Reverse recovery time
Reverse recovery charge
Thermal resistance
µs
1
IFM=50A, di/dt=–100A/µs, VR=150/300V* , Tj=25°C
—
—
Qrr
µC
—
—
trr
µs
1
IFM=50A, di/dt=–150A/µs, VR=150/300V* , Tj=150°C
—
—
Qrr
µC
—
—
Rth (j-c)
Junction to case
°C/W
°C/W
—
—
Rth (c-f)
1
Contact thermal resistance
Case to fin, conductive grease applied
*
6 class: VR=150V 12 class: VR=300V
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
100 2 3 457
2 3 45
1
10
103
7
1.0
Tj=25°C
5
3
2
0.8
0.6
0.4
102
7
5
3
2
101
7
5
0.2
0
3
2
100
0.2
1.0
1.8
2.6
3.4
4.2
10 –3 2 3 457 10 –22 3 45 710 –1 2 3 45 7 10
FORWARD VOLTAGE (V)
TIME (s)
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
REVERSE RECOVERY CHARACTERISTICS
VS. FORWARD CURRENT (TYPICAL)
102
7
5
101
1000
3
2
800
600
400
Irr
trr
101
100
Qrr
7
5
3
2
100
7
5
10 –1
VR=150/300V
di/dt=–100A/µs
Tj=25°C
200
0
3
2
Tj=150°C
10 –1
10 –2
100 2 3 4 57 101 2 3 45 7 102 2 3 45 7 103
1
2
3 4 5 7 10 20 30 405070100
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
VS. –di/dt (TYPICAL)
101
102
VR=150/300V
IF=50A
7
5
Tj=25°C
Tj=150°C
3
2
Irr
100
101
7
5
Qrr
3
2
100
7
5
trr
10 –1
3
2
10 –2
10 –1
100 2 3 4 57 101 2 3 45 7 102 2 3 45 7 103
–di/dt (A/µs)
Feb.1999
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