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TM130EZ-2H

更新时间：2024-09-18 01:50:32
品牌：MITSUBISHI
描述：HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE

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TM130EZ-2H 概述

HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE 高压大功率一般使用绝缘型 可控硅整流器

TM130EZ-2H 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Not Recommended包装说明：FLANGE MOUNT, R-PUFM-X6
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.76Is Samacsys：N
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN SERIES DIODE
最大直流栅极触发电流：100 mA最大直流栅极触发电压：3 V
快速连接描述：G-GR螺丝端子的描述：2A-2CK
JESD-30 代码：R-PUFM-X6最大漏电流：30 mA
通态非重复峰值电流：2600 A元件数量：1
端子数量：6最大通态电流：130000 A
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大均方根通态电流：204.1 A
断态重复峰值电压：1600 V重复峰值反向电压：1600 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子形式：UNSPECIFIED端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SCR
Base Number Matches：1

TM130EZ-2H 数据手册

通过下载TM130EZ-2H数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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MITSUBISHI THYRISTOR MODULES  
TM130RZ/EZ/GZ-24,-2H  
HIGH VOLTAGE HIGH POWER GENERAL USE  
INSULATED TYPE  
TM130RZ/EZ/GZ-24,-2H  
• IT (AV) Average on-state current.......... 130A  
• IF (AV) Average forward current .......... 130A  
• VRRM Repetitive peak reverse voltage  
.... 1200/1600V  
• VDRM Repetitive peak off-state voltage  
.... 1200/1600V  
• MIX DOUBLE ARMS  
• Insulated Type  
• UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
(RZ Type)  
APPLICATION  
DC motor control, NC equipment, AC motor control, contactless switches,  
electric furnace temperature control, light dimmers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
(RZ)  
φ6.5  
M8  
CR  
K
1
A
1
K
1
K
2
A2  
A
A
1
A2  
K
2
SR  
K
1
G
1
K1  
G1  
18  
16  
18  
16  
30  
32  
30  
(EZ)  
(GZ)  
68.5  
68.5  
CR  
CR  
150  
1
A2  
1 K  
2
K
SR  
K
1
Tab#110,  
t=0.5  
G
1
LABEL  
K
2
K
1
A
1
A2  
SR  
K
1
(RZ Type)  
G
1
(Bold line is connective bar.)  
Feb.1999  
MITSUBISHI THYRISTOR MODULES  
TM130RZ/EZ/GZ-24,-2H  
HIGH VOLTAGE HIGH POWER GENERAL USE  
INSULATED TYPE  
ABSOLUTE MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
24  
2H  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
1200  
1350  
960  
1600  
1700  
1280  
1600  
1700  
1280  
V
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
VDSM  
VD (DC)  
Repetitive peak off-state voltage  
Non-repetitive peak off-state voltage  
DC off-state voltage  
1200  
1350  
960  
Symbol  
Parameter  
Conditions  
Ratings  
205  
Unit  
A
IT (RMS), IF (RMS) RMS current  
T (AV), IF (AV) Average current  
I
Single-phase, half-wave 180° conduction, TC=78°C  
One half cycle at 60Hz, peak value  
130  
A
ITSM, IFSM  
Surge (non-repetitive) current  
2600  
A
2
2
4
2
I t  
I t for fusing  
Value for one cycle of surge current  
2.8 × 10  
100  
A s  
di/dt  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C  
Peak gate power dissipation  
A/µs  
W
10  
Average gate power dissipation  
Peak gate forward voltage  
3.0  
W
10  
V
Peak gate reverse voltage  
5.0  
V
Peak gate forward current  
4.0  
A
Junction temperature  
–40~125  
–40~125  
2500  
°C  
Tstg  
Storage temperature  
°C  
Viso  
Isolation voltage  
Mounting torque  
Weight  
Charged part to case  
V
8.83~10.8  
90~110  
1.96~3.92  
20~40  
300  
N·m  
kg·cm  
N·m  
kg·cm  
g
Main terminal screw M8  
—
—
Mounting screw M6  
Typical value  
ELECTRICAL CHARACTERISTICS  
Limits  
Typ.  
—
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
—
Max.  
30  
IRRM  
Repetitive peak reverse current  
Repetitive peak off-state current  
Forward voltage  
Tj=125°C, VRRM applied  
Tj=125°C, VDRM applied  
mA  
mA  
V
—
—
30  
IDRM  
—
—
1.5  
—
VTM, VFM  
dv/dt  
VGT  
Tj=125°C, ITM=IFM=390A, instantaneous meas.  
500  
—
—
Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM  
V/µs  
V
—
3.0  
—
Gate trigger voltage  
Tj=25°C, VD=6V, RL=2Ω  
0.25  
15  
—
VGD  
Gate non-trigger voltage  
Gate trigger current  
Tj=125°C, VD=1/2VDRM  
V
—
100  
0.22  
0.1  
IGT  
Tj=25°C, VD=6V, RL=2Ω  
mA  
°C/W  
°C/W  
—
—
Rth (j-c)  
Rth (c-f)  
Thermal resistance  
Junction to case (per 1/2 module)  
Case to fin, conductive grease applied (per 1/2 module)  
—
—
Contact thermal resistance  
Measured with a 500V megohmmeter between main terminal  
and case  
10  
—
—
—
Insulation resistance  
MΩ  
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.  
Feb.1999  
MITSUBISHI THYRISTOR MODULES  
TM130RZ/EZ/GZ-24,-2H  
HIGH VOLTAGE HIGH POWER GENERAL USE  
INSULATED TYPE  
MAXIMUM RATINGS  
IT (RMS)  
IF (RMS)  
IT (AV)  
IF (AV)  
ITSM  
IFSM  
2
Item  
VRRM  
VRSM  
VR (DC)  
VDRM  
—
VDSM  
—
VD (DC)  
—
I
t
di/dt  
—
Thyristor  
Diode  
Item  
PGM  
—
PG (AV)  
—
VFGM  
—
IFGM  
—
Tj  
Tstg  
Thyristor  
Diode  
ELECTRICAL CHARACTERISTICS  
VTM  
VFM  
Item  
IRRM  
IDRM  
dv/dt  
—
VGT  
—
VGD  
—
IGT  
—
Rth (j-c)  
Rth (c-f)  
Thyristor  
Diode  
—
PERFORMANCE CURVES  
MAXIMUM FORWARD CHARACTERISTIC  
RATED SURGE (NON-REPETITIVE)  
CURRENT  
104  
3200  
7
5
2800  
2400  
2000  
1600  
1200  
800  
3
2
Tj=125°C  
103  
7
5
3
2
102  
7
5
3
400  
2
101  
0.6  
0
1
2
3
5 7 10  
20 30 5070100  
1.0  
1.4  
1.8  
2.2  
FORWARD VOLTAGE (V)  
CONDUCTION TIME (CYCLE AT 60Hz)  
GATE CHARACTERISTICS  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE (JUNCTION TO CASE)  
100 2 3 57101  
0.25  
4
3
2
VFGM=10V  
PGM=10W  
101  
0.20  
0.15  
0.10  
7
VGT=3.0V  
5
3
2
100  
7
5
PG(AV)=  
Tj=25°C  
3.0W  
IGT=  
100mA  
3
2
0.05  
0
10 –1  
VGD=0.25V  
IFGM=4.0A  
7
5
4
101 2 3 5 7102 2 3 5 7 103 2 3 5 7 104  
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 100  
TIME (s)  
GATE CURRENT (mA)  
Feb.1999  
MITSUBISHI THYRISTOR MODULES  
TM130RZ/EZ/GZ-24,-2H  
HIGH VOLTAGE HIGH POWER GENERAL USE  
INSULATED TYPE  
MAXIMUM AVERAGE POWER  
DISSIPATION (SINGLE PHASE HALFWAVE)  
LIMITING VALUE OF THE AVERAGE  
CURRENT (SINGLE PHASE HALFWAVE)  
200  
150  
140  
180°  
120°  
θ
160  
120  
80  
130  
360°  
90°  
120  
RESISTIVE, INDUCTIVE  
LOAD  
60°  
110  
PER SINGLE ELEMENT  
θ=30°  
100  
90  
80  
θ
40  
70  
360°  
θ=30° 60° 90° 120° 180°  
RESISTIVE, INDUCTIVE  
LOAD  
60  
50  
PER SINGLE ELEMENT  
0
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
AVERAGE CURRENT (A)  
AVERAGE CURRENT (A)  
MAXIMUM AVERAGE  
POWER DISSIPATION  
(RECTANGULAR WAVE)  
LIMITING VALUE OF THE AVERAGE  
CURRENT (RECTANGULAR WAVE)  
400  
320  
240  
160  
80  
130  
120  
110  
100  
90  
θ
θ
360°  
RESISTIVE, INDUCTIVE  
LOAD  
PER SINGLE ELEMENT  
360°  
RESISTIVE, INDUCTIVE  
LOAD  
DC  
PER SINGLE ELEMENT  
270°  
180°  
120°  
90°  
80  
60°  
θ=30°  
70  
90° 180°  
60° 120° 270° DC  
60 θ=30°  
0
50  
0
40  
80  
120  
160  
200  
0
40 80 120 160 200 240 280 320  
AVERAGE CURRENT (A)  
AVERAGE CURRENT (A)  
Feb.1999  

TM130EZ-2H 相关器件

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