TM200DZ-2H [MITSUBISHI]

HIGH POWER GENERAL USE INSULATED TYPE; 高功率一般使用绝缘型
TM200DZ-2H
元器件型号: TM200DZ-2H
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

HIGH POWER GENERAL USE INSULATED TYPE
高功率一般使用绝缘型

高功率电源
PDF文件: 总4页 (文件大小:63K)
下载文档:  下载PDF数据表文档文件
型号参数:TM200DZ-2H参数

TM200DZ-H

HIGH POWER GENERAL USE INSULATED TYPE

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78 MITSUBISHI

TM200DZ-M

HIGH POWER GENERAL USE INSULATED TYPE

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22 MITSUBISHI

TM200EZ-24

HIGH POWER GENERAL USE INSULATED TYPE

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21 MITSUBISHI

TM200EZ-24

Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,

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0 MITSUBISHI

TM200EZ-2H

HIGH POWER GENERAL USE INSULATED TYPE

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15 MITSUBISHI

TM200EZ-2H

Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element,

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0 MITSUBISHI

TM200EZ-H

HIGH POWER GENERAL USE INSULATED TYPE

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20 MITSUBISHI

TM200EZ-H

Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,

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0 MITSUBISHI

TM200EZ-M

HIGH POWER GENERAL USE INSULATED TYPE

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17 MITSUBISHI

TM200EZ-M

Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element,

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0 MITSUBISHI

TM200GZ-24

HIGH POWER GENERAL USE INSULATED TYPE

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14 MITSUBISHI

TM200GZ-24

Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,

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0 MITSUBISHI

TM200GZ-2H

HIGH POWER GENERAL USE INSULATED TYPE

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27 MITSUBISHI

TM200GZ-2H

Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element,

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0 MITSUBISHI

TM200GZ-H

HIGH POWER GENERAL USE INSULATED TYPE

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15 MITSUBISHI