TM20DA-M [MITSUBISHI]
MEDIUM POWER GENERAL USE INSULATED TYPE; 中功率一般使用绝缘型
| 型号： | TM20DA-M |
| 厂家： | 
Mitsubishi Group |
| 描述： | MEDIUM POWER GENERAL USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
TM20DA-M,-H
• IT (AV) Average on-state current............ 20A
• VRRM Repetitive peak reverse voltage
........ 400/800V
• VDRM Repetitive peak off-state voltage
........ 400/800V
• DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
60
2–φ5.5
47.6
A1
A2
A
1
A
2
2
CR
G
2
CR
1
2
G
1
K
1
K2
K1
K
G1
G2
8.5
15
36
4–M4
Tab#110, t=0.5
LABEL
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
M
H
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
400
480
320
400
480
320
800
960
640
800
960
640
V
V
V
V
V
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Symbol
Parameter
RMS on-state current
Average on-state current
Conditions
Ratings
30
Unit
A
IT (RMS)
IT (AV)
ITSM
Single-phase, half-wave 180° conduction, TC=87°C
20
A
Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value
2
400
A
2
2
2
I t
I t for fusing
Value for one cycle of surge current
6.7 × 10
100
A s
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Critical rate of rise of on-state current VD=1/2VDRM, IG=0.5A, Tj=125°C
Peak gate power dissipation
A/µs
W
5.0
Average gate power dissipation
Peak gate forward voltage
0.5
W
10
V
Peak gate reverse voltage
5.0
V
Peak gate forward current
2.0
A
Junction temperature
–40~+125
–40~+125
2500
°C
Tstg
Storage temperature
°C
Viso
Isolation voltage
Mounting torque
Weight
Charged part to case
V
0.98~1.47
10~15
1.47~2.45
15~25
80
N·m
kg·cm
N·m
kg·cm
g
Main terminal screw M4
—
—
Mounting screw M5
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Typ.
—
Symbol
Parameter
Test conditions
Unit
Min.
—
Max.
4.0
4.0
1.8
—
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
mA
mA
V
—
—
IDRM
VTM
—
—
Tj=125°C, ITM=60A, instantaneous meas.
500
—
—
dv/dt
VGT
Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM
V/µs
V
—
3.0
—
Gate trigger voltage
Tj=25°C, VD=6V, RL=2Ω
0.25
10
—
VGD
Gate non-trigger voltage
Gate trigger current
Tj=125°C, VD=1/2VDRM
V
—
50
IGT
Tj=25°C, VD=6V, RL=2Ω
mA
°C/W
°C/W
—
—
1.0
0.25
Rth (j-c)
Rth (c-f)
Thermal resistance
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
—
—
Contact thermal resistance
Measured with a 500V megohmmeter between main terminal
and case
10
—
—
—
Insulation resistance
MΩ
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
103
7
500
400
300
200
100
0
Tj=125°C
5
3
2
102
7
5
3
2
101
7
5
3
2
10 –1
1
2
3
5 7 10
20 30 5070100
0.5
1.5
2.5
3.5
4.5
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
100 2 3 5 7101
4
3
2
1.0
V
FGM=10V
101
0.8
0.6
0.4
P
GM=5.0W
7
V
GT=3.0V
=
5
3
2
100
7
5
P
G(AV)=
0.50W
I
GT
50mA
Tj=
25°C
3
2
0.2
0
V
GD=0.25V
10 –1
7
5
4
101 2 3 5 7102 2 3 5 7 103 2 3 5 7 104
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 100
GATE CURRENT (mA)
TIME (s)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
40
35
30
25
20
15
10
5
130
120
110
100
90
PER SINGLE
ELEMENT
θ
180°
120°
PER SINGLE
ELEMENT
90°
360°
RESISTIVE,
INDUCTIVE
LOAD
60°
θ=30°
80
θ
360°
70
θ=30° 60° 90° 120° 180°
RESISTIVE,
INDUCTIVE
LOAD
60
0
50
0
5
10
15
20
0
5
10
15
20
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
(RECTANGULAR WAVE)
40
35
30
25
20
15
10
5
130
120
110
100
90
270°
DC
PER SINGLE
ELEMENT
180°
120°
90°
60°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
θ
360°
80
RESISTIVE,
INDUCTIVE
LOAD
90° 180°
θ=30° 60° 120° 270°
DC
70
60
PER SINGLE
ELEMENT
0
50
0
5
10 15 20 25 30 35 40
0
5
10 15 20 25 30 35 40
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
80
70
60
50
40
30
20
10
0
130
125
120
115
110
105
100
95
PER SINGLE
MODULE
θ=180°
θ
θ
90°
60°
30°
360°
θ=30°
60°,90°
RESISTIVE,
INDUCTIVE
LOAD
180°
θ
θ
360°
90
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
85
80
0
10
20
30
40
50
0
10
20
30
40
50
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
80
130
180°
120°
70
60
50
40
30
20
10
0
120
110
100
90
90°
60°
θ=30°
θ
θ
360°
80
RESISTIVE,
INDUCTIVE
LOAD
θ
θ
70
360°
θ=30°
60° 90° 120° 180°
RESISTIVE,
INDUCTIVE
LOAD
60
50
0
5
10 15 20 25 30 35 40
0
5
10 15 20 25 30 35 40
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
80
130
70
120
110
100
90
θ
120°
90°
360°
60
60°
RESISTIVE,
INDUCTIVE
LOAD
50
θ=30°
40
30
80
θ
θ=30° 60° 90°
120°
20
10
0
360°
70
RESISTIVE,
INDUCTIVE
LOAD
60
50
0
10 20 30 40 50 60 70 80
0
10 20 30 40 50 60 70 80
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
Feb.1999
相关型号：
©2020 ICPDF网 联系我们和版权申明