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元器件品牌
FD1000FX-90
[MITSUBISHI]
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE; 高功率，高频率，按包装类型
元器件型号：
FD1000FX-90
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
高功率，高频率，按包装类型
二极管 高功率电源
PDF文件：
总3页 (文件大小：48K)
下载文档：
下载PDF数据表文档文件
型号参数：FD1000FX-90参数
查看货源
FD1000R17IE4
PrimePACK™3 Modul und NTC
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156
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34
INFINEON
FD1000R17IE4D_B2
PrimePACK3 module and NTC
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156
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17
INFINEON
FD1000R33HE3-K
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode
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156
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53
INFINEON
FD1000R33HE3KB60BPSA1
Insulated Gate Bipolar Transistor,
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156
-
0
INFINEON
FD1000R33HE3KBOSA1
Insulated Gate Bipolar Transistor
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156
-
0
INFINEON
FD100H06A5B
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER
Warning
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156
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0
VISHAY
FD100H06A5BPBF
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER
Warning
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156
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0
VISHAY
FD100H06A5F
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER
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156
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0
VISHAY
FD100H06A5P
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER
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156
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0
VISHAY
FD100N06A5B
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER
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156
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0
VISHAY
FD100N06A5F
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER
Warning
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156
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0
VISHAY
FD100N06A5P
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER
Warning
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156
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0
VISHAY
FD100N06A5R
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER
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156
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0
VISHAY
FD100R12KF-K
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048
Warning
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30
ETC
FD100U06A5B
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1
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156
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0
VISHAY
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