FS10VS-9 [MITSUBISHI]

HIGH-SPEED SWITCHING USE; 高速开关使用
FS10VS-9
元器件型号: FS10VS-9
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

HIGH-SPEED SWITCHING USE
高速开关使用

晶体 开关 晶体管
PDF文件: 总4页 (文件大小:45K)
下载文档:  下载PDF数据表文档文件
型号参数:FS10VS-9参数

FS10VS-9A

High-Speed Switching Use Nch Power MOS FET

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11 RENESAS

FS10VS-9A-T11

High-Speed Switching Use Nch Power MOS FET

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10 RENESAS

FS10VSH03

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-263AB

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17 ETC

FS10VSH-03-T2

Power Field-Effect Transistor, 10A I(D), 30V, 0.141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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0 MITSUBISHI

FS10VSH06

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-263AB

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7 ETC

FS10VSH-06

Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 POWEREX

FS10VSH-06

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 MITSUBISHI

FS10VSH-06-T1

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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0 MITSUBISHI

FS10VSH-06-T2

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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0 MITSUBISHI

FS10VSH2

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-263AB

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13 ETC

FS10VSH-2

Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 MITSUBISHI

FS10VSH-2-T1

Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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0 MITSUBISHI

FS10VSH3

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-263AB

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12 ETC

FS10VSH-3

Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 MITSUBISHI

FS10VSH-3-T2

Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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0 MITSUBISHI