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元器件品牌
FS10VS-9
[MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
元器件型号:
FS10VS-9
生产厂家:
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:
HIGH-SPEED SWITCHING USE
高速开关使用
晶体 开关 晶体管
PDF文件:
总4页 (文件大小:45K)
下载文档:
下载PDF数据表文档文件
型号参数:FS10VS-9参数
查看货源
FS10VS-9A
High-Speed Switching Use Nch Power MOS FET
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11
RENESAS
FS10VS-9A-T11
High-Speed Switching Use Nch Power MOS FET
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10
RENESAS
FS10VSH03
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-263AB
Warning
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17
ETC
FS10VSH-03-T2
Power Field-Effect Transistor, 10A I(D), 30V, 0.141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
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156
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0
MITSUBISHI
FS10VSH06
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-263AB
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7
ETC
FS10VSH-06
Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
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0
POWEREX
FS10VSH-06
Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
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0
MITSUBISHI
FS10VSH-06-T1
Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
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0
MITSUBISHI
FS10VSH-06-T2
Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
Warning
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156
-
0
MITSUBISHI
FS10VSH2
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-263AB
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13
ETC
FS10VSH-2
Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
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0
MITSUBISHI
FS10VSH-2-T1
Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
Warning
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156
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0
MITSUBISHI
FS10VSH3
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-263AB
Warning
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156
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12
ETC
FS10VSH-3
Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
Warning
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0
MITSUBISHI
FS10VSH-3-T2
Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
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0
MITSUBISHI
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