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元器件品牌
FS50KMJ-3
[MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
元器件型号：
FS50KMJ-3
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
HIGH-SPEED SWITCHING USE
高速开关使用
晶体 开关 晶体管 功率场效应晶体管 脉冲 局域网
PDF文件：
总4页 (文件大小：46K)
下载文档：
下载PDF数据表文档文件
型号参数：FS50KMJ-3参数
查看货源
FS50KMJ-3-A8
High-Speed Switching Use Nch Power MOS FET
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156
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12
RENESAS
FS50KMJ-3-A8
50A, 150V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FN, 3 PIN
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156
-
0
RENESAS
FS50R06KE3
EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode
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156
-
39
EUPEC
FS50R06KF
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
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19
ETC
FS50R06KF2
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
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17
ETC
FS50R06KF3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
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156
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8
ETC
FS50R06KL2
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
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156
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6
ETC
FS50R06W1E3
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
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156
-
70
INFINEON
FS50R06W1E3_B11
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
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: Undefined variable $rtag in
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156
-
19
INFINEON
FS50R06W1E3BOMA1
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-22
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: Undefined variable $rtag in
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156
-
0
INFINEON
FS50R06YE3
IGBT-modules
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156
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23
EUPEC
FS50R06YL4
IGBT-Module
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156
-
53
EUPEC
FS50R07N2E4
EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
Warning
: Undefined variable $rtag in
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156
-
18
INFINEON
FS50R07N2E4_B11
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-25
Warning
: Undefined variable $rtag in
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156
-
0
INFINEON
FS50R07N2E4B11BOSA1
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-25
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156
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1
INFINEON
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