MTC-6017-2R300U
Projected Capacitive Multi-touch Screen with 7H anti-scratch surface, up to 10-point Multi-touch
暂无信息
VECOW
IS25WP064A-QGLA2
1.8V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
暂无信息
ISSI
R6524ENZ
R6xxxENx系列是重视易用性,以低噪声性能为特点的Super Junction MOSFET产品。该系列产品可在音响和照明等需要尽可能抑制噪声的应用中实现高性能。
暂无信息
ROHM
0150160877
0.50mm Pitch Premo-Flex One-Touch FFC Jumper with Ears, Same Side Contacts (Type A), 178.00mm Cable Length, Gold (Au) Plating, 80 Circuits
暂无信息
MOLEX
IS25WP064A-RGLA3
1.8V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
暂无信息
ISSI
IMW120R030M1H
IMW120R030M1H是采用TO247-3封装的1200 V、30 mΩ CoolSiC™ SiC MOSFET,它基于先进的沟槽半导体工艺,该工艺经过优化,兼具性能与可靠性。与IGBT和MOSFET等传统硅(Si)基开关相比,SiC MOSFET具有诸多优势,例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、 独立于温度的低开关损耗以及无阈值导通特性。因此,CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构,如功率因素校正(PFC)电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。
开关 栅 DC-DC转换器 双极性晶体管 功率因数校正 二极管 栅极 半导体
INFINEON
KYOCERA AVX
AMPHENOL
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