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MSN7002 [MORESEMI]

60V(D-S) N-Channel Enhancement Mode Power MOS FET;
MSN7002
型号： MSN7002
厂家： MORE Semiconductor    MORE Semiconductor
描述：

60V(D-S) N-Channel Enhancement Mode Power MOS FET
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MSN7002  
60V(D-S) N-Channel Enhancement Mode Power MOS FET  
General Features  
● VDS = 60V,ID = 0.115A  
RDS(ON) < 3Ω @ VGS=5V  
RDS(ON) < 2Ω @ VGS=10V  
● Lead free product is acquired  
● Surface mount package  
Lead Free  
Application  
●Direct logic-level interface: TTL/CMOS  
●Drivers: relays, solenoids,lamps, hammers,display,  
memories, transistors, etc.  
●Battery operated systems  
●Solid-state relays  
Marking and pin assignment  
PIN Configuration  
SOT-23 top view  
Schematic diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Ø180mm  
Tape width  
Quantity  
MSN7002  
SOT-23  
8 mm  
3000 units  
Absolute Maximum Ratings (TC=25℃unless otherwise noted)  
Parameter  
Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VDS  
±20  
VGS  
0.115  
0.8  
A
ID  
Drain Current-Continuous@ Current-Pulsed (Note 1)  
A
IDM  
Maximum Power Dissipation  
0.2  
W
℃
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
625  
℃/W  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
1/6  
MSN7002  
Electrical Characteristics (TC=25℃unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ  
Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
BVDSS  
IDSS  
VGS=0V ID=250μA  
60  
-
68  
-
-
V
VDS=60V,VGS=0V  
1
μA  
Gate-Body Leakage Current  
On Characteristics (Note 3)  
Gate Threshold Voltage  
IGSS  
VGS=±20V,VDS=0V  
-
-
±100  
nA  
VGS(th)  
RDS(ON)  
gFS  
VDS=VGS,ID=250μA  
VGS=5V, ID=0.05A  
VGS=10V, ID=0.5A  
VDS=10V,ID=0.2A  
1
1.7  
1.3  
1.1  
-
2.5  
3
V
Ω
Ω
S
-
-
Drain-Source On-State Resistance  
2
Forward Transconductance  
Dynamic Characteristics (Note4)  
Input Capacitance  
0.08  
-
Clss  
Coss  
Crss  
-
-
-
20  
10  
50  
20  
5
PF  
PF  
PF  
VDS=30V,VGS=0V,  
F=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics (Note 4)  
Turn-on Delay Time  
3.6  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
10  
50  
17  
10  
-
-
-
-
nS  
nS  
nS  
nS  
Turn-on Rise Time  
VDD=30V,ID=0.2A  
VGS=10V,RGEN=10Ω  
Turn-Off Delay Time  
Turn-Off Fall Time  
V
DS=10V,ID=0.115A,  
Total Gate Charge  
Qg  
-
1.7  
3
nC  
VGS=4.5V  
Drain-Source Diode Characteristics  
Diode Forward Voltage (Note 3)  
Diode Forward Current (Note 2)  
VSD  
IS  
VGS=0V,IS=0.115A  
-
-
-
-
1.2  
V
A
0.115  
Notes:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. Surface Mounted on FR4 Board, t ≤ 10 sec.  
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  
4. Guaranteed by design, not subject to production  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
2/6  
MSN7002  
Typical Electrical and Thermal Characteristics  
Vdd  
ton  
tr  
toff  
tf  
td(on)  
VOUT  
VIN  
td(off)  
Rl  
Vin  
90%  
90%  
D
Vout  
Vgs  
INVERTED  
Rgen  
10%  
90%  
G
10%  
50%  
S
50%  
10%  
PULSE WIDTH  
Figure 1:Switching Test Circuit  
Figure 2:Switching Waveforms  
Vds Drain-Source Voltage (V)  
Vgs Gate-Source Voltage (V)  
Figure 3 Output Characteristics  
Figure 4 Transfer Characteristics  
ID- Drain Current (A)  
Vgs Gate-Source Voltage (V)  
Figure 5 Drain-Source On-Resistance  
Figure 6 Rdson vs Vgs  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
3/6  
MSN7002  
Qg Gate Charge (nC)  
Vsd Source-Drain Voltage (V)  
Figure 7 Gate Charge  
Figure 8 Source-DrainDiode Forward  
TJ-Junction Temperature(℃)  
Vds Drain-Source Voltage (V)  
Figure 9 Drain-Source On-Resistance  
Figure 10 Safe Operation Area  
Vds Drain-Source Voltage (V)  
Figure 11 Capacitance vs Vds  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
4/6  
MSN7002  
Square Wave Pluse Duration(sec)  
Figure 12 Normalized Maximum Transient Thermal Impedance  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
5/6  
MSN7002  
SOT-23 Package Information  
Dimensions in Millimeters  
Symbol  
MIN.  
MAX.  
1.150  
A
A1  
A2  
b
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
0.100  
1.050  
0.500  
c
0.150  
D
3.000  
E
1.400  
E1  
e
2.550  
0.950TYP  
2.000  
e1  
L
1.800  
0.550REF  
0.500  
L1  
θ
0.300  
0°  
8°  
Notes  
1. All dimensions are in millimeters.  
2. Tolerance ±0.10mm (4 mil) unless otherwise specified  
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.  
4. Dimension L is measured in gauge plane.  
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
6/6  

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