V62C3802048L-45V [MOSEL]

Ultra Low Power 256K x 8 CMOS SRAM; 超低功耗256K ×8 CMOS SRAM
V62C3802048L-45V
型号: V62C3802048L-45V
厂家: MOSEL VITELIC, CORP    MOSEL VITELIC, CORP
描述:

Ultra Low Power 256K x 8 CMOS SRAM
超低功耗256K ×8 CMOS SRAM

内存集成电路 静态存储器 光电二极管
文件: 总12页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
V62C3802048L(L)  
Ultra Low Power  
256K x 8 CMOS SRAM  
Features  
• Low-power consumption  
Functional Description  
The V62C3802048L is a low power CMOS Static RAM orga-  
nized as 262,144 words by 8 bits. Easy memory expansion is p-  
rovided by an active LOW CE1, an active HIGH CE2, an acti-  
ve LOW OE , and Tri-state I/O’s. This device has an autom-  
atic power-down mode feature when deselected.  
- Active: 40mA at 35ns  
- Stand-by: 10 mA (CMOS input/output)  
2 mA CMOS input/output, L version  
• Single + 2.7 to 3.3V Power Supply  
• Equal access and cycle time  
Writing to the device is accomplished by taking Chip En-  
able 1 (CE1) with Write Enable (WE) LOW, and Chip Enab-  
le 2 (CE2) HIGH. Reading from the device is performed by  
taking Chip Enable 1 (CE1) with Output Enable (OE)  
LOW while Write Enable (WE ) and Chip Enable 2 (CE2)  
is HIGH. The I/O pins are placed in a high-impedance sta-  
te when the device is deselected: the outputs are disabled d-  
uring a write cycle.  
• 35/45/55/70/85/100 ns access time  
• Easy memory expansion with CE1, CE2  
and OE inputs  
• 1.0V data retention mode  
The V62C3802048LL comes with a 1V data retention feature  
and Lower Standby Power. The V62C3802048L is available in  
a 32-pin 8 x 20 mm TSOP1/8 x 13.4mm STSOP and CSP type  
48-fpBGA packages.  
• TTL compatible, Tri-state input/output  
• Automatic power-down when deselected  
• Package available: 32-TSOP1 / STSOP  
• 48 Ball CSP_BGA  
32-Pin TSOP1 / STSOP(CSP_BGA see next page)  
Logic Block Diagram  
A11  
A9  
OE  
1
2
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A10  
CE1  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
GND  
I/O3  
I/O2  
I/O1  
A0  
A8  
3
A13  
WE  
CE2  
A15  
Vcc  
A17  
A16  
A14  
A12  
A7  
4
INPUT BUFFER  
5
A
0
6
A
A
1
2
7
8
I/O8  
I/O1  
A
A
3
4
9
10  
11  
12  
13  
14  
15  
16  
A
A
5
6
Cell Array  
A6  
A1  
A
A
7
8
A5  
A2  
A4  
A3  
A9  
OE  
COLUMN DECODER  
WE  
CE1  
CE2  
CONTROL  
CIRCUIT  
A10  
A
11  
A12  
A
13  
A
14  
A
15  
A
16  
A17  
1
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
MOSEL VITELIC V62C3802048L(L)B  
1
2
3
4
5
6
1
2
3
4
5
6
A0  
A1  
A2  
NC  
NC  
NC  
NC  
CS2  
WE  
NC  
NC  
NC  
NC  
A3  
A6  
A7  
NC  
NC  
NC  
NC  
A8  
A
B
I/O5  
I/O6  
VSS  
VCC  
I/O7  
A4  
I/O1  
I/O2  
VCC  
VSS  
I/O3  
C
A5  
NC  
NC  
A17  
D
E
F
G
H
I/O8  
A9  
OE  
CS1  
A11  
A16  
A12  
A15  
A13  
I/O4  
A14  
A10  
Note: NC means no Ball.  
Top View  
Top View  
48 Ball - 9x12 fpBGA (Ultra Low Power)  
PACKAGE OUTLINE DWG.  
SYMBOL  
UNIT:MM  
1.05+0.15  
0.25+0.05  
0.35+.05  
0.30(TYP)  
12.00+0.10  
5.25  
A
A1  
b
aaa  
SIDE VIEW  
c
D
D
D1  
D1  
E
9.00+0.10  
3.75  
6
E1  
e
0.75TYP  
0.10  
5
aaa  
4
3
2
1
A
B
C
D
E
F
G
H
b
BOTTOM VIEW  
SOLDER BALL  
2
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
Absolute Maximum Ratings *  
Parameter  
Symbol Minimum Maximum  
Unit  
Voltage on Any Pin Relative to Gnd  
Power Dissipation  
Vt  
-0.5  
4.6  
1.0  
V
P
-
W
T
0
Storage Temperature (Plastic)  
Temperature Under Bias  
Tstg  
-55  
-40  
+150  
+85  
C
0
Tbias  
C
* Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat-  
ing only and functional operation of the device at these or any conditions outside those indicated in the operational sections of this specifica-  
tion is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
Truth Table  
CE1  
CE2  
WE  
OE  
X
Data  
High-Z  
High-Z  
Data Out  
High-Z  
Data In  
Mode  
H
X
L
L
L
X
L
X
X
H
H
L
Standby  
X
Standby  
H
H
H
L
Active, Read  
H
Active, Output Disable  
Active, Write  
X
* Key: X = Don’t Care, L = Low, H = High  
0
0
0
0
Recommended Operating Conditions (T = 0 C to +70 C / -40 C to 85 C**)  
A
Parameter  
Symbol  
Min  
2.7  
Typ  
Max  
3.3  
Unit  
V
3.0  
0.0  
-
V
V
V
V
CC  
Supply Voltage  
Gnd  
0.0  
0.0  
V
2.2  
V
+ 0.2  
IH  
CC  
Input Voltage  
V
-0.5*  
-
0.6  
IL  
* V min = -2.0V for pulse width less than t /2.  
IL  
RC  
** For Industrial Temperature.  
3
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
0
0
0
0
DC Operating Characteristics (V = 2.7 to 3.3V, Gnd = 0V, T = 0 C to +70 C / -40 C to 85 C)  
cc  
A
-55  
-70  
-85  
-100  
Parameter  
Sym Test Conditions  
Unit  
Min Max Min Max Min Max Min Max  
V = Max,  
-
-
-
1
1
3
-
-
-
1
1
3
-
-
-
1
1
3
-
-
-
1
1
3
mA  
Input Leakage Current  
cc  
II I  
LI  
V = Gnd to V  
in  
cc  
CE1 = V or CE2 = V  
mA  
Output Leakage  
Current  
IH  
IL  
IILOI  
V = Max, V  
= Gnd to V  
cc  
OUT  
cc  
CE1 = V , CE2 = V  
mA  
Operating Power  
Supply Current  
ICC  
IL  
IH  
V =V orV ,I =0mA  
IN  
IH  
IL OUT  
CE1 = V , CE2 = V  
-
-
35  
3
-
-
35  
3
-
-
30  
3
-
-
25  
3
mA  
mA  
ICC1  
IL  
IH  
Average Operating  
Current  
I
= 0mA,  
OUT  
Min Cycle, 100% Duty  
CE1 = 0.2V ,  
ICC2  
CE2 =V - 0.2V  
cc  
I
= 0mA,  
OUT  
Cycle Time=1ms, 100% Duty  
CE1 = V or CE2 = V  
-
-
0.5  
10  
-
-
0.5  
10  
-
-
0.5  
10  
-
-
0.5  
10  
mA  
Standby Power Supply ISB  
IH  
IL  
Current (TTL Level)  
CE1 > V - 0.2V or  
mA  
Standby Power Supply ISB1  
Current (CMOS Level)  
cc  
CE2 < 0.2V, f = 0  
V < 0.2V or  
IN  
-
-
2
0.4  
-
-
-
2
0.4  
-
-
-
2
0.4  
-
-
-
2
0.4  
-
mA  
V
V > V - 0.2V  
L
IN  
OL  
OH  
cc  
I
I
= 2 mA  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
= -2 mA  
2.4  
2.4  
2.4  
2.4  
V
0
Capacitance (f = 1MHz, T = 25 C)  
A
Parameter*  
Input Capacitance  
Symbol  
Cin  
Test Condition  
Max  
7
Unit  
pF  
V = 0V  
in  
I/O Capacitance  
CI/O  
V = V = 0V  
8
pF  
in  
out  
* This parameter is guaranteed by device characterization and is not production tested.  
AC Test Conditions  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing  
Reference Level  
0.6V to 2.2V  
5ns  
CL  
*
50% of input level  
(VIL+VIH)/2  
Output Load Condition  
70ns/85 ns CL = 30pf + 1TTL Load  
Load 100ns/120 ns CL = 100pf + 1TTL Load  
Figure A.  
* Including Scope and Jig Capacitance  
4
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
0
0
0
0
DC Operating Characteristics (V = 2.7 to 3.3V, Gnd = 0V, T = 0 C to +70 C / -40 C to 85 C)  
cc  
A
-35  
-45  
Parameter  
Sym Test Conditions  
Unit  
Min Max Min Max  
V = Max,  
-
-
-
1
1
3
-
-
-
1
1
3
mA  
Input Leakage Current  
cc  
II I  
LI  
V = Gnd to V  
in  
cc  
CE1 = V or CE2 = V  
IL  
mA  
Output Leakage  
Current  
IILOI  
IH  
V = Max, V  
= Gnd to V  
cc  
OUT  
cc  
CE1 = V , CE2 = V  
mA  
Operating Power  
Supply Current  
ICC  
IL  
IH  
V =V orV ,I =0mA  
IN  
IH  
IL OUT  
CE1 = V , CE2 = V  
-
-
40  
3
-
-
40  
3
mA  
mA  
ICC1  
IL  
IH  
Average Operating  
Current  
I
= 0mA,  
OUT  
Min Cycle, 100% Duty  
CE1 = 0.2V ,  
ICC2  
CE2 =V - 0.2V  
cc  
I
= 0mA,  
OUT  
Cycle Time=1ms, 100% Duty  
CE1 = V or CE2 = V  
-
-
0.5  
10  
-
-
0.5  
10  
mA  
Standby Power Supply ISB  
IH  
IL  
Current (TTL Level)  
CE1 > V - 0.2V or  
mA  
Standby Power Supply ISB1  
Current (CMOS Level)  
cc  
CE2 < 0.2V, f = 0  
V < 0.2V or  
IN  
-
-
2
0.4  
-
-
-
2
0.4  
-
mA  
V
V > V - 0.2V  
L
IN  
OL  
OH  
cc  
I
I
= 2 mA  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
= -2 mA  
2.4  
2.4  
V
5
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
0
0
0
0
Read Cycle (3,9) (V = 2.7 to3.3V, Gnd = 0V, T = 0 C to +70 C / -40 C to +85 C)  
cc  
A
Note  
Unit  
Parameter  
Symbol  
-55  
-70  
-85  
-100  
Min Max Min Max Min Max Min Max  
t
55  
-
-
55  
55  
40  
-
70  
-
-
70  
70  
40  
-
85  
-
-
85  
85  
40  
-
100  
-
100  
100  
50  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
RC  
t
-
-
Address Access Time  
AA  
t
-
-
-
Chip Enable Access Time  
Output Enable Access Time  
OutputHold fromAddress Change  
Chip Enable to Output in Low-Z  
Chip Disable to Output in High-Z  
Output Enable to Output in Low-Z  
Output Disable to Output in High-Z  
Power-Up Time  
ACE  
t
-
-
-
-
OE  
t
10  
10  
-
10  
10  
-
10  
10  
-
10  
10  
-
OH  
t
-
-
-
-
4,5  
4,5  
4,5  
4,5  
5
CLZ  
t
25  
-
30  
-
35  
-
40  
-
CHZ  
t
5
-
5
-
5
-
5
-
OLZ  
t
20  
-
25  
-
30  
-
35  
-
OHZ  
t
0
-
0
-
0
-
0
-
PU  
t
55  
70  
85  
100  
5
Power-Down Time  
PD  
0
0
0
0
Write Cycle (3,11) (V = 2.7 to 3.3V, Gnd = 0V, T = 0 C to +70 C / -40 C to +85 C)  
A
cc  
Note  
Unit  
Parameter  
Symbol  
-55  
-70  
-85  
-100  
Min Max Min Max Min Max Min Max  
t
55  
40  
40  
0
-
-
70  
60  
60  
0
-
-
85  
70  
70  
0
-
-
100  
80  
80  
0
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Cycle Time  
Chip Enable to Write End  
WC  
t
CW  
t
-
-
-
-
Address Setup to Write End  
Address Setup Time  
AW  
t
-
-
-
-
AS  
t
40  
0
-
50  
0
-
60  
0
-
70  
0
-
Write Pulse Width  
WP  
t
-
-
-
-
Write Recovering Time  
Data Valid to Write End  
Data Hold Time  
WR  
t
25  
0
-
30  
0
-
35  
0
-
40  
0
-
DW  
t
-
-
-
-
DH  
t
-
25  
-
-
30  
-
-
35  
-
-
40  
-
4,5  
4,5  
Write Enable to Output in High-Z  
Output Active from Write End  
WZ  
t
5
5
5
5
OW  
6
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
0
0
0
0
Read Cycle (3,9) (V = 2.7 to3.3V, Gnd = 0V, T = 0 C to +70 C / -40 C to +85 C)  
cc  
A
-35  
-45  
Note  
Unit  
Parameter  
Symbol  
Min Max Min Max  
t
35  
-
-
45  
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
RC  
t
35  
35  
20  
-
45  
45  
20  
-
Address Access Time  
AA  
t
-
-
Chip Enable Access Time  
Output Enable Access Time  
OutputHold fromAddress Change  
Chip Enable to Output in Low-Z  
Chip Disable to Output in High-Z  
Output Enable to Output in Low-Z  
Output Disable to Output in High-Z  
Power-Up Time  
ACE  
t
-
-
OE  
t
5
5
-
5
5
-
OH  
t
-
-
4,5  
4,5  
4,5  
4,5  
5
CLZ  
t
20  
-
25  
-
CHZ  
t
5
-
5
-
OLZ  
t
15  
-
20  
-
OHZ  
t
0
-
0
-
PU  
t
35  
45  
5
Power-Down Time  
PD  
0
0
0
0
Write Cycle (3,11) (V = 2.7 to 3.3V, Gnd = 0V, T = 0 C to +70 C / -40 C to +85 C)  
A
cc  
-35  
-45  
Note  
Unit  
Parameter  
Symbol  
Min Max Min Max  
t
35  
30  
30  
0
-
-
45  
40  
40  
0
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Cycle Time  
WC  
t
Chip Enable to Write End  
Address Setup to Write End  
Address Setup Time  
CW  
t
-
-
AW  
t
-
-
AS  
t
30  
0
-
35  
0
-
Write Pulse Width  
WP  
t
-
-
Write Recovering Time  
Data Valid to Write End  
Data Hold Time  
WR  
t
20  
0
-
25  
0
-
DW  
t
-
-
DH  
t
-
20  
-
-
25  
-
4,5  
4,5  
Write Enable to Output in High-Z  
Output Active from Write End  
WZ  
t
5
5
OW  
7
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
Timing Waveform of Read Cycle 1 (3,6,7,9) (Address Controlled)  
tRC  
Address  
tAA  
tOH  
DOUT  
Data Valid  
Timing Waveform of Read Cycle 2 (5,6,8,9) (CE1 Controlled)  
tRC  
CE1  
tOE  
OE  
tOHZ  
tCHZ  
tOLZ  
tACE  
DOUT  
Data Valid  
tPD  
tCLZ  
tPU  
ICC  
ISB  
Supply Current  
50%  
50%  
Timing Waveform of Read Cycle 3 (3,6,8,9) (CE2 Controlled)  
tRC  
CE2  
tOE  
OE  
tOHZ  
tCHZ  
tOLZ  
tACE  
DOUT  
Data Valid  
tPD  
tCLZ  
tPU  
ICC  
ISB  
Supply Current  
50%  
50%  
8
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
Timing Waveform of Write Cycle 1 (10,11) (WE Controlled)  
tWC  
tAW  
tWR  
Address  
tWP  
WE  
tAS  
tDW  
tDH  
DIN  
Data Valid  
tWZ  
tOW  
DOUT  
(10,11) (CE1 Controlled)  
Timing Waveform of Write Cycle 2  
tWC  
tAW  
tWR  
Address  
tAS  
tCW  
CE1  
tWP  
WE  
tWZ  
tDW  
tDH  
DIN  
Data Valid  
DOUT  
Timing Waveform of Write Cycle 3 (10,11) (CE2 Controlled)  
tWC  
tAW  
tWR  
Address  
tAS  
tCW  
CE2  
WE  
tWP  
tWZ  
tDW  
tDH  
DIN  
Data Valid  
DOUT  
9
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
Data Retention Characteristics (L Version Only)(1)  
Parameter  
Symbol  
VDR  
Test Condition  
Min  
Max Unit  
-
V
for Data Retention  
CE > VCC - 0.2V or  
1.0  
V
CC  
1
Data Retention Current  
ICCDR  
CE < + 0.2V  
mA  
2
-
1
Chip Deselect to Data Retention Time  
Operation Recovery Time(2)  
tCDR  
tR  
VIN > VCC - 0.2V or  
VIN < 0.2V  
0
-
-
ns  
ns  
t
RC  
0
0
0
0
Data Retention Waveform (L Version Only) (T = 0 C to +70 C / -40 C to +85 C)  
A
Data Retention Mode  
VCC  
Vcc_typ  
V
>
1.0V  
Vcc_typ  
DR  
tCDR  
tR  
CE  
V
V
V
IH  
DR  
IH  
Notes  
1. L-version includes this feature.  
2. This Parameter is samples and not 100% tested.  
3. For test conditions, see AC Test Condition, Figure A.  
4. This parameter is tested with CL = 5pF as shown in Figure B. Transition is measured + 500mV from steady-state voltage.  
5. This parameter is guaranteed, but is not tested.  
6. WE is HIGH for read cycle.  
7. CE1 and OE are LOW and CE2 is HIGH for read cycle.  
8. Address valid prior to or coincident with CE1 transition LOW or CE2 transition HIGH.  
9. All read cycle timings are referenced from the last valid address to the first transtion address.  
10. CE1 or WE must be HIGH or CE2 must be LOW during address transition.  
11. All write cycle timings are referenced from the last valid address to the first transition address.  
10  
REV. 1.2 May 2001 V62C3802048L(L)  
V62C3802048L(L)  
Ordering Information  
Device Type*  
Speed  
Package  
8x13.4 mm 32-pin Plastic STSOP  
V62C3802048L-35V  
V62C3802048L-45V  
V62C3802048L-55V  
V62C3802048L-70V  
V62C3802048L-85V  
V62C3802048L-100V  
35 ns  
45 ns  
55 ns  
70 ns  
85 ns  
100 ns  
V62C3802048LL-35V  
V62C3802048LL-45V  
V62C3802048LL-55V  
V62C3802048LL-70V  
V62C3802048LL-85V  
V62C3802048LL-100V  
35 ns  
45 ns  
55 ns  
70 ns  
85 ns  
100 ns  
V62C3802048L-35T  
V62C3802048L-45T  
V62C3802048L-55T  
V62C3802048L-70T  
V62C3802048L-85T  
V62C3802048L-100T  
35 ns  
45 ns  
55 ns  
70 ns  
85 ns  
100 ns  
8 x 20 mm 32-pin Plastic TSOP1  
V62C3802048LL-35T  
V62C3802048LL-45T  
V62C3802048LL-55T  
V62C3802048LL-70T  
V62C3802048LL-85T  
V62C3802048LL-100T  
35 ns  
45 ns  
55 ns  
70 ns  
85 ns  
100 ns  
V62C3802048L(L)-35B  
V62C3802048L(L)-45B  
V62C3802048L(L)-55B  
V62C3802048L(L)-70B  
V62C3802048L(L)-85B  
V62C3802048L(L)-100B  
35 ns  
45 ns  
55 ns  
70 ns  
85 ns  
100 ns  
CSP type 48-fpBGA  
* For Industrial Temperature tested devices, an “I” designator will be added to the end of the Device number.  
11  
REV. 1.2 May 2001 V62C3802048L(L)  
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V62C3802048L(L)  
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5/01  
Printed in U.S.A.  
© Copyright 2001, MOSEL VITELIC Inc.  
The information in this document is subject to change without  
notice.  
MOSEL VITELIC subjects its products to normal quality control  
sampling techniques which are intended to provide an assurance  
of high quality products suitable for usual commercial applica-  
tions. MOSEL VITELIC does not do testing appropriate to provide  
100% product quality assurance and does not assume any liabil-  
ity for consequential or incidental arising from any use of its prod-  
ucts. If such products are to be used in applications in which  
personal injury might occur from failure, purchaser must do its  
own quality assurance testing appropriate to such applications.  
MOSEL VITELIC makes no commitment to update or keep cur-  
rent the information contained in this document. No part of this  
document may be copied or reproduced in any form or by any  
means without the prior written consent of MOSEL-VITELIC.  
MOSEL VITELIC 3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461  

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