MBR20120CL [MOSPEC]

Schottky Barrier Rectifiers;
MBR20120CL
型号: MBR20120CL
厂家: MOSPEC SEMICONDUCTOR    MOSPEC SEMICONDUCTOR
描述:

Schottky Barrier Rectifiers

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MOSPEC  
MBR20120CL  
Schottky Barrier Rectifiers  
SCHOTTKY BARRIER  
RECTIFIERS  
Using the Schottky Barrier principle with a Refractory metal capable of high  
temperature operation metal.  
The proprietary barrier technology allows for  
reliable operation up to 175junction temperature. Typical application are in  
switching Mode Power Supplies such as adaptors, DC/DC converters, free-  
wheeling and polarity protection diodes.  
20 AMPERES  
120 VOLTS  
Features  
Low Forward Voltage.  
Low Switching noise.  
High Current Capacity  
Guarantee Reverse Avalanche.  
Guard-Ring for Stress Protection.  
Low Power Loss & High efficiency.  
175Operating Junction Temperature  
Low Stored Charge Majority Carrier Conduction.  
Plastic Material used Carries Underwriters Laboratory  
TO-220AB  
Flammability Classification 94V-O  
In compliance with EU RoHs 2002/95/EC directives  
MAXIMUM RATINGS  
Characteristic  
Symbol  
MBR20120CL  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
120  
84  
10  
20  
V
RMS Reverse Voltage  
VR(RMS)  
V
A
MILLIMETERS  
DIM  
Average Rectifier Forward Current  
( per diode )  
MIN  
MAX  
IF(AV)  
Total Device (Rated VR), TC=125℃  
A
B
C
D
E
F
G
H
I
14.68  
9.78  
5.02  
13.06  
3.57  
2.42  
1.12  
0.72  
4.22  
1.14  
2.20  
0.33  
2.48  
3.70  
15.32  
10.42  
6.52  
14.62  
4.07  
2.66  
1.36  
0.96  
4.98  
1.38  
2.98  
0.55  
2.98  
3.90  
Peak Repetitive Forward Current  
IFM  
IFSM  
20  
150  
A
A
(Rate VR, Square Wave, 20kHz)  
Non-Repetitive Peak Surge Current (Surge applied at  
rate load conditions halfware, single phase, 60Hz)  
Operating and Storage Junction Temperature Range  
TJ , Tstg  
-65 to +175  
J
K
L
M
O
THERMAL RESISTANCES  
/w  
Typical Thermal Resistance junction to case ( per device )  
Rθj-c  
3.4  
ELECTRIAL CHARACTERISTICS  
Characteristic  
Symbol Min Typ. Max. Unit  
Maximum Instantaneous Forward Voltage ( per diode )  
( IF =0.1 Amp TC = 25)  
( IF =5.0 Amp TC = 25)  
--- 0.29 0.35  
--- 0.75 0.80  
--- 0.87 0.90  
VF  
IR  
V
( IF =10 Amp TC = 25)  
Maximum Instantaneous Reverse Current  
--  
--  
0.1  
30  
( Rated DC Voltage, TC = 25)  
0.08  
20  
mA  
( Rated DC Voltage, T
C
= 125
)  
MBR20120CL  
FIG-1 FORWARD CURRENT DERATING CURVE  
FIG-2 TYPICAL FORWARD CHARACTERISITICS  
TJ=125  
TJ=75℃  
TJ=25℃  
CASE TEMPERATURE ()  
FORWARD VOLTAGE (Volts)  
FIG-3 TYPICAL REVERSE CHARACTERISTICS  
FIG-4 TYPICAL JUNCTION CAPACITANCE  
TJ=125℃  
TJ=75℃  
TJ=25℃  
REVERSE VOLTAGE (Volts)  
REVERSE VOLTAGE (Volts)  
FIG-5 PEAK FORWARD SURGE CURRENT  
NUMBER OF CYCLES AT 60 Hz  
5K-B  

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