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S30C90C [MOSPEC]

Schottky Barrier Rectifiers; 肖特基势垒整流器器
S30C90C
元器件型号： S30C90C
生产厂家： MOSPEC SEMICONDUCTOR    MOSPEC SEMICONDUCTOR
描述和应用：

Schottky Barrier Rectifiers
肖特基势垒整流器器
PDF文件： 总2页 (文件大小：150K)
下载文档：  下载PDF数据表文档文件
型号参数：S30C90C参数
 查看货源

S30D100

 SCHOTTKY BARRIER RECTIFIERS(30A,70-100V)

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37 MOSPEC

S30D100A

 30.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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0 THINKISEMI

S30D100PT

 Schottky Barrier Rectifier

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2 CTC

S30D10A0

 Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10A0

 Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10A0PBF

 Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10A0PBF

 Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10B0

 Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10B0

 Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10B0F

 Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

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0 IRF

S30D10B0F

 Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

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0 IRF

S30D10B0FPBF

 Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

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0 IRF

S30D10B0FPBF

 Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

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0 IRF

S30D10B0PBF

 Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10B0PBF

 Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF
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