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元器件品牌
2N6509-S
[MOTOROLA]
Silicon Controlled Rectifier, 25A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB;
元器件型号:
2N6509-S
生产厂家:
MOTOROLA, INC
描述和应用:
Silicon Controlled Rectifier, 25A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
PDF文件:
总4页 (文件大小:110K)
下载文档:
下载PDF数据表文档文件
型号参数:2N6509-S参数
查看货源
2N6509T
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
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33
ONSEMI
2N6509-T
Silicon Controlled Rectifier, 25A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MOTOROLA
2N6509TG
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Warning
: Undefined variable $rtag in
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156
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45
ONSEMI
2N6509TG
Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 50-TUBE
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156
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0
ONSEMI
2N650A
alloy-junction germanium transistors
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on line
156
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ETC
2N650A
alloy-junction germanium transistors
Warning
: Undefined variable $rtag in
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on line
156
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18
ETC
2N651
alloy-junction germanium transistors
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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15
ETC
2N651
alloy-junction germanium transistors
Warning
: Undefined variable $rtag in
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on line
156
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21
ETC
2N651
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
SMSC
2N6510
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
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28
SEME-LAB
2N6510
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7A I(C) | TO-3
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156
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18
ETC
2N6510
Silicon NPN Power Transistors
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156
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26
SAVANTIC
2N6510
SI NPN POWER BJT
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156
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57
NJSEMI
2N6511
Silicon NPN Power Transistors
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on line
156
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13
SAVANTIC
2N6511
Bipolar NPN Device
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on line
156
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12
SEME-LAB
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