BC239RLRE [MOTOROLA]
100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92;型号: | BC239RLRE |
厂家: | MOTOROLA |
描述: | 100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 晶体 放大器 晶体管 |
文件: | 总4页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by BC237/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
BC BC BC
237 238 239
Rating
Symbol
Unit
Vdc
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
CEO
45
50
25
30
25
30
V
Vdc
CES
EBO
V
6.0
5.0
100
5.0
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
357
125
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 2.0 mA, I = 0)
BC237
BC238
BC239
V
45
25
25
—
—
—
—
—
—
V
V
(BR)CEO
C
B
Emitter–Base Breakdown Voltage
(I = 100 A, I = 0)
BC237
BC238
BC239
V
6.0
5.0
5.0
—
—
—
—
—
—
(BR)EBO
E
C
Collector Cutoff Current
I
CES
(V
CE
= 30 V, V
= 0)
BC238
BC239
—
—
0.2
0.2
15
15
nA
BE
(V
(V
= 50 V, V
= 30 V, V
= 0)
BC237
—
0.2
15
CE
BE
= 0) T = 125°C
BC238
BC239
—
—
0.2
0.2
4.0
4.0
µA
CE
BE
A
(V
CE
= 50 V, V
= 0) T = 125°C
BC237
—
0.2
4.0
BE
A
REV 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 10 µA, V
C CE
h
FE
—
= 5.0 V)
BC237A
BC237B/238B
BC237C/238C/239C
—
—
—
90
150
270
—
—
—
(I = 2.0 mA, V
CE
= 5.0 V)
= 5.0 V)
BC237
BC239
BC237A
BC237B/238B
BC237C/238C/239C
120
120
120
200
380
—
—
170
290
500
800
800
220
460
800
C
(I = 100 mA, V
C CE
BC237A
BC237B/238B
BC237C/238C/239C
—
—
—
120
180
300
—
—
—
Collector–Emitter On Voltage
(I = 10 mA, I = 0.5 mA)
V
V
V
CE(sat)
BC237/BC238/BC239
BC237/BC239
BC238
—
—
0.07
0.2
0.2
0.6
0.8
C
B
(I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
V
BE(sat)
—
—
0.6
—
0.83
1.05
C
C
B
B
(I = 100 mA, I = 5.0 mA)
Base–Emitter On Voltage
V
BE(on)
(I = 100 µA, V
= 5.0 V)
= 5.0 V)
= 5.0 V)
—
0.55
—
0.5
0.62
0.83
—
0.7
—
C
CE
CE
CE
(I = 2.0 mA, V
C
(I = 100 mA, V
C
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 0.5 mA, V
= 3.0 V, f = 100 MHz)
BC237
BC238
BC239
—
—
—
100
120
140
—
—
—
C
CE
(I = 10 mA, V
= 5.0 V, f = 100 MHz)
BC237
BC238
BC239
150
150
150
200
240
280
—
—
—
C
CE
Collector–Base Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
—
—
4.5
pF
pF
dB
obo
CB
Emitter–Base Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
C
—
8.0
—
ibo
EB
Noise Figure
C
NF
(I = 0.2 mA, V
C
= 5.0 V, R = 2.0 kΩ,
S
CE
f = 1.0 kHz)
BC239
—
2.0
4.0
(I = 0.2 mA, V
f = 1.0 kHz, ∆f = 200 Hz)
= 5.0 V, R = 2.0 kΩ,
S
C
CE
BC237
BC238
BC239
—
—
—
2.0
2.0
2.0
10
10
4.0
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.9
V
= 10 V
T
= 25
°
C
CE
= 25°C
A
T
A
0.8
0.7
0.6
0.5
0.4
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
@ V
CE
= 10 V
BE(on)
0.6
0.4
0.3
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
0.2
0.2
0.5
1.0
I
2.0
5.0
10
20
50
100 200
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.0 10
20 30 50 70 100
, COLLECTOR CURRENT (mAdc)
I
, COLLECTOR CURRENT (mAdc)
C
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
200
T
= 25°C
A
C
ib
V
T
= 10 V
100
80
CE
= 25
°C
3.0
2.0
A
C
ob
60
40
30
20
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
0.4 0.6 0.8 1.0
2.0
V , REVERSE VOLTAGE (VOLTS)
R
4.0 6.0 8.0 10
20
40
I
, COLLECTOR CURRENT (mAdc)
C
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitances
170
160
150
V
= 10 V
CE
f = 1.0 kHz
= 25
140
130
120
T
°C
A
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
I
, COLLECTOR CURRENT (mAdc)
C
Figure 5. Base Spreading Resistance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 17:
PIN 1. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. EMITTER
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BC237/D
◊
相关型号:
BC239ZL1
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MOTOROLA
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