BC308C [MOTOROLA]

Amplifier Transistors(PNP); 放大器晶体管（ PNP ）


型号：	BC308C
厂家：	MOTOROLA
描述：	Amplifier Transistors(PNP) 放大器晶体管（ PNP ）晶体放大器晶体管
文件：	总4页 (文件大小：114K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by BC307/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

307 308C 309

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

CEO

CBO

EBO

–45

–50

–25

–30

–25

–30

Vdc

–5.0

–100

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

357

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –2.0 mAdc, I = 0)

BC307

BC308C

BC309B

–45

–25

—

Vdc

(BR)CEO

Emitter–Base Breakdown Voltage

(I = –100 Adc, I = 0)

BC307

BC308C

BC309B

–5.0

—

(BR)EBO

Collector–Emitter Leakage Current

CES

= –50 V, V

= –30 V, V

= 0)

BC307

BC308C

BC309B

—

–0.2

–15

nAdc

= –50 V, V

= –30 V, V

= 0) T = 125°C

BC307

—

–0.2

–4.0

µA

CES

= 0) T = 125°C

BC308C

BC309B

—

–0.2

–4.0

CES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(I = –10 µAdc, V

C CE

—

= –5.0 Vdc)

BC307B/309B

BC307C/308C

—

150

270

—

(I = –2.0 mAdc, V

= –5.0 Vdc)

BC307

BC308C

120

—

800

(I = –100 mAdc, V

C CE

BC307B/309B

BC307C/308C

200

420

290

500

460

800

BC307B/309B

BC307C/308C

—

180

300

—

Collector–Emitter Saturation Voltage

(I = –10 mAdc, I = –0.5 mAdc)

Vdc

CE(sat)

—

–0.10

–0.30

–0.25

–0.3

–0.6

—

(I = –10 mAdc, I = see Note 1)

(I = –100 mAdc, I = –5.0 mAdc)

Base–Emitter Saturation Voltage

(I = –10 mAdc, I = –0.5 mAdc)

Vdc

BE(sat)

—

–0.7

–1.0

—

(I = –100 mAdc, I = –5.0 mAdc)

Base–Emitter On Voltage

(I = –2.0 mAdc, V = –5.0 Vdc)

–0.55

–0.62

–0.7

BE(on)

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

MHz

(I = –10 mAdc, V

= –5.0 Vdc, f = 100 MHz)

BC307

BC308C

BC309B

—

280

320

360

—

Common Base Capacitance

(V = –10 Vdc, I = 0, f = 1.0 MHz)

—

6.0

cbo

Noise Figure

(I = –0.2 mAdc, V

= –5.0 Vdc,

= 2.0 kΩ, f = 1.0 kHz)

= –5.0 Vdc,

= 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)

BC309

BC307

BC308C

BC309B

—

2.0

4.0

(I = –0.2 mAdc, V

4.0

1. I = –10 mAdc on the constant base current characteristic, which yields the point I = –11 mAdc, V

= –1.0 V.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2.0

1.5

–1.0

–0.9

= 25°C

= –10 V

= 25°C

@ I /I = 10

C B

BE(sat)

–0.8

–0.7

–0.6

–0.5

–0.4

1.0

@ V

= –10 V

BE(on)

0.7

0.5

–0.3

–0.2

–0.1

0.3

0.2

@ I /I = 10

C B

CE(sat)

–0.2

–0.5 –1.0 –2.0

–5.0 –10

–20

–50 –100 –200

–0.1 –0.2

–0.5 –1.0 –2.0

–5.0 –10

–20

–50 –100

, COLLECTOR CURRENT (mAdc)

I , COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

7.0

5.0

400

300

200

150

= –10 V

T = 25°C

= 25°C

100

3.0

2.0

–0.5

1.0

–0.4 –0.6

–1.0

–2.0 –3.0

–5.0

–10

–20 –30

–50

–1.0

–2.0

V , REVERSE VOLTAGE (VOLTS)

–4.0 –6.0

–10

–20 –30 –40

, COLLECTOR CURRENT (mAdc)

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

1.0

150

140

0.5

0.3

= –10 V

f = 1.0 kHz

= 25

= –10 V

f = 1.0 kHz

= 25

°C

130

120

110

100

0.1

0.05

0.03

0.01

–0.1

–0.2

–0.5

–1.0

–2.0

–5.0

–10

–0.1

–0.2 –0.3 –0.5

–1.0

–2.0 –3.0 –5.0

–10

, COLLECTOR CURRENT (mAdc)

I , COLLECTOR CURRENT (mAdc)

Figure 5. Output Admittance

Figure 6. Base Spreading Resistance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

INCHES

MIN

MILLIMETERS

DIM

MAX

0.205

0.210

0.165

0.022

0.019

0.055

0.105

0.020

–––

MIN

4.45

4.32

3.18

0.41

1.15

2.42

0.39

12.70

6.35

2.04

–––

MAX

5.20

5.33

4.19

0.55

0.48

1.39

2.66

0.50

–––

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

–––

X X

SECTION X–X

–––

0.105

0.100

–––

2.66

2.54

–––

0.115

0.135

2.93

3.43

–––

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

CASE 029–04

(TO–226AA)

ISSUE AD

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC307/D

◊

BC308C [MOTOROLA]

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