BD243C [MOTOROLA]
Complementary Silicon Plastic Power Transistors; 互补硅塑料功率晶体管
| 型号： | BD243C |
| 厂家： | 
MOTOROLA |
| 描述： | Complementary Silicon Plastic Power Transistors |
| 文件： | 总6页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BD243B/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general purpose amplifier and switching applications.
•
Collector – Emitter Saturation Voltage —
= 1.5 Vdc (Max) @ I = 6.0 Adc
Collector Emitter Sustaining Voltage —
V
CE(sat)
C
•
V
V
= 80 Vdc (Min) — BD243B, BD244B
= 100 Vdc (Min) — BD243C, BD244C
CEO(sus)
CEO(sus)
*Motorola Preferred Device
•
•
High Current Gain Bandwidth Product
f
= 3.0 MHz (Min) @ I = 500 mAdc
T
C
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
Compact TO–220 AB Package
MAXIMUM RATINGS
80–100 VOLTS
65 WATTS
BD243B
BD244B
BD243C
BD244C
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
80
80
100
100
V
CB
V
5.0
EB
Collector Current — Continuous
Peak
I
6
10
C
Base Current
I
B
2.0
Adc
Total Device Dissipation
P
Watts
D
@ T = 25 C
65
0.52
C
Derate above 25 C
W/ C
C
CASE 221A–06
TO–220AB
Operating and Storage Junction
Temperature Range
T , T
J
–65 to +150
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
1.92
C/W
θJC
80
60
40
20
0
0
20
40
60
80
100
120
C)
140
160
T
, CASE TEMPERATURE (
°
C
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 30 mAdc, I = 0)
BD243B, BD244B
BD243C, BD244C
80
100
—
—
C
B
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
—
0.7
mAdc
CEO
BD243B, BD243C, BD244B, BD244C
CE
B
Collector Cutoff Current
I
µAdc
CES
(V
CE
(V
CE
= 80 Vdc, V
= 100 Vdc, V
EB
= 0)
= 0)
BD243B, BD244B
BD243C, BD244C
—
—
400
400
EB
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
1.0
mAdc
—
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 0.3 Adc, V
(I = 3.0 Adc, V
C
= 4.0 Vdc)
= 4.0 Vdc)
30
15
—
—
C
CE
CE
Collector–Emitter Saturation Voltage
(I = 6.0 Adc, I = 1.0 Adc)
V
—
1.5
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = 6.0 Adc, V = 4.0 Vdc)
V
—
2.0
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
f
3.0
20
—
—
MHz
—
T
(I = 500 mAdc, V
C CE
= 10 Vdc, f = 1.0 MHz)
test
Small–Signal Current Gain
(I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
(1) Pulse Test: Pulsewidth
300 µs, Duty Cycle
2.0%.
(2) f = h • f
T
fe test
2.0
V
CC
– 30 V
T
V
= 25°C
J
1.0
= 30 V
CC
/I = 10
25 µs
R
0.7
0.5
C
I
C B
+ 11 V
0
SCOPE
R
0.3
0.2
B
t
r
– 9.0 V
t , t 10 ns
51
D
1
0.1
0.07
0.05
r
f
t
@ V
= 5.0 V
d
BE(off)
DUTY CYCLE = 1.0%
– 4 V
R
AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B
C
0.03
0.02
D
MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE I
MSD6100 USED BELOW I
1
100 mA
100 mA
0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0 6.0
B
B
I
, COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Turn–On Time
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
0.05
0.02
0.1
0.07
0.05
R
= 1.92°C/W
θ
JC(max)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
SINGLE
PULSE
1
(pk)
0.03
0.02
t
2
SINGLE PULSE
T
– T = P
C
R
J(pk)
θ
JC(t)
0.01
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
0.5 ms
5.0
3.0
2.0
down. Safe operating area curves indicate I – V
limits of
C
CE
1.0
ms
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
T
= 150°C
J
5.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T = 25°C
1.0
0.5
The data of Figure 5 is based on T
= 150 C: T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
C
J(pk)
may be calculated from the data in Fig-
CURVES APPLY BELOW RATED V
CEO
0.3
0.2
150 C, T
J(pk)
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
BD243B, BD244B
BD243C, BD244C
0.1
5.0
10
20
40
60
80
100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active Region Safe Operating Area
5.0
300
T
= 25°C
T
= 25°C
3.0
2.0
J
J
V
I
= 30 V
CC
/I = 10
200
t
C B
B1 B2
s
I
= I
1.0
C
ib
0.7
0.5
100
70
0.3
0.2
C
ob
t
f
50
0.1
0.07
0.05
30
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
0.5
1.0
2.0 3.0
V , REVERSE VOLTAGE (VOLTS)
R
5.0
10
20
30
50
I
, COLLECTOR CURRENT (AMP)
C
Figure 6. Turn-Off Time
Figure 7. Capacitance
3
Motorola Bipolar Power Transistor Device Data
500
2.0
1.6
1.2
0.8
V
= 2.0 V
T
= 25°C
CE
J
300
200
T
= 150°C
J
I
= 1.0 A
2.5 A
5.0 A
C
100
70
25°C
50
30
20
–55°C
0.4
0
10
7.0
5.0
0.06
0.1
0.2
0.3 0.4 0.6
1.0
2.0
4.0 6.0
10
20 30
50
I , BASE CURRENT (mA)
B
100
200 300
500
1000
I
, COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
1.6
1.2
0.8
+2.5
+2.0
+1.5
+1.0
T
= 25°C
*APPLIES FOR I /I
C B
≤ 5.0
J
V
@ I /I = 10
C B
+ 25°C to + 150°C
BE(sat)
+0.5
0
*
θ
FOR V
VC
CE(sat)
– 55°C to + 25°C
V
@ V = 4.0 V
CE
BE
–0.5
–1.0
–1.5
–2.0
–2.5
+ 25
°C to + 150°C
V
CE(sat)
@ I /I = 10
C B
0.4
0
θ
FOR V
VB
BE
– 55°C to + 25°C
0.06
0.1
0.2 0.3 0.4 0.6
1.0
2.0 3.0 4.0 6.0
0.06
0.1
0.2 0.3
0.5
1.0
2.0 3.0 0.4 0.6
I
, COLLECTOR CURRENT (AMPS)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
3
2
M
10
10
V
CE
= 30 V
V
= 30 V
CE
10
M
1.0
100
10
T
J
= 150°C
I
= 10 x I
CES
C
1
0
10
100°C
I
= 2 x I
CES
C
k
k
25°C
10
I
≈ I
CES
C
–1
10
I
= I
CES
C
k
k
–2
1.0
10
10
REVERSE
FORWARD
(TYPICAL I
VALUES
OBTAINED FROM FIGURE 12)
CES
0.1
–3
–0.3 –0.2 –0.1
0
+0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7
20
40
60
80
100
120
C)
140
160
V
, BASE-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
BE
J
Figure 12. Collector Cut-Off Region
Figure 13. Effects of Base–Emitter Resistance
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
5
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BD243B/D
◊
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