BDW46 [MOTOROLA]
Darlington Complementary Silicon Power Transistors; 达林顿互补硅功率晶体管
| 型号： | BDW46 |
| 厂家： | 
MOTOROLA |
| 描述： | Darlington Complementary Silicon Power Transistors |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BDW42/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for general purpose and low speed switching applications.
•
•
High DC Current Gain – h = 2500 (typ.) @ I = 5.0 Adc.
FE C
Collector Emitter Sustaining Voltage @ 30 mAdc:
*Motorola Preferred Device
V
V
= 80 Vdc (min.) — BDW46
= 100 Vdc (min.) — BDW42/BDW47
CEO(sus)
CEO(sus)
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80–100 VOLTS
85 WATTS
•
Low Collector Emitter Saturation Voltage
V
V
= 2.0 Vdc (max.) @ I = 5.0 Adc
CE(sat)
CE(sat)
C
= 3.0 Vdc (max.) @ I = 10.0 Adc
C
•
•
Monolithic Construction with Built–In Base Emitter Shunt resistors
TO–220AB Compact Package
MAXIMUM RATINGS
BDW42
BDW47
Rating
Symbol
BDW46
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Base Current
V
CEO
100
100
V
CB
80
V
EB
5.0
15
I
C
I
B
0.5
Total Device Dissipation
P
D
@ T = 25 C
85
0.68
Watts
W/ C
C
Derate above 25 C
CASE 221A–06
TO–220AB
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
1.47
C/W
θJC
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T
, CASE TEMPERATURE (°C)
C
Figure 1. Power Temperature Derating Curve
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 30 mAdc, I = 0)
BDW46
BDW42/BDW47
80
100
—
—
C
B
Collector Cutoff Current
I
I
mAdc
mAdc
mAdc
CEO
CBO
(V
CE
(V
CE
= 40 Vdc, I = 0)
BDW46
BDW42/BDW47
—
—
2.0
2.0
B
= 50 Vdc, I = 0)
B
Collector Cutoff Current
(V
CB
(V
CB
= 80 Vdc, I = 0)
BDW41/BDW46
BDW42/BDW47
—
—
1.0
1.0
E
= 100 Vdc, I = 0)
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
2.0
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 5.0 Adc, V
= 4.0 Vdc)
= 4.0 Vdc)
1000
250
—
—
C
CE
CE
(I = 10 Adc, V
C
Collector–Emitter Saturation Voltage
(I = 5.0 Adc, I = 10 mAdc)
V
Vdc
Vdc
CE(sat)
—
—
2.0
3.0
C
B
(I = 10 Adc, I = 50 mAdc)
C
B
Base–Emitter On Voltage
(I = 10 Adc, V = 4.0 Vdc)
V
—
3.0
BE(on)
C
CE
SECOND BREAKDOWN (2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42
I
Adc
S/b
V
CE
V
CE
V
CE
V
CE
= 28.4 Vdc
= 40 Vdc
= 22.5 Vdc
= 36 Vdc
3.0
1.2
3.8
1.2
—
—
—
—
BDW46/BDW47
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(I = 3.0 Adc, V = 3.0 Vdc, f = 1.0 MHz)
f
4.0
—
MHz
pF
T
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
C
ob
BDW42
—
—
200
300
CB
E
BDW46/BDW47
Small–Signal Current Gain
(I = 3.0 Adc, V = 3.0 Vdc, f = 1.0 kHz)
h
fe
300
—
C
CE
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Pulse Test non repetitive: Pulse Width = 250 ms.
5.0
V
t
CC
s
3.0
2.0
R
AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
– 30 V
D
MUST BE FAST RECOVERY TYPES, e.g.:
1
1N5825 USED ABOVE I
100 mA
100 mA
B
R
C
t
f
MSD6100 USED BELOW I
B
1.0
SCOPE
TUT
0.7
0.5
R
V
B
2
APPROX
+ 8.0 V
0.3
0.2
D
t
r
51
1
8.0 k
150
0
V
= 30 V
/I = 250
CC
I
I
C B
= I
V
+ 4.0 V
1
0.1
0.07
0.05
B1 B2
= 25
APPROX
– 12 V
25
µ
s
for t and t , D id disconnected
and V = 0
For NPN test circuit reverse all polarities
T
°C
t
d
@ V = 0 V
BE(off)
d
r
1
J
2
t , t
r
10 ns
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
f
DUTY CYCLE = 1.0%
I
, COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
3–213
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
0.05
0.02
0.1
0.07
0.05
R
R
(t) = r(t) R
θ
θ
θ
JC
JC
JC
°C/W
= 1.92
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
2
SINGLE PULSE
1
0.01
T
– T = P
C
R
(t)
JC
J(pk)
(pk)
θ
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
50
50
0.1 ms
0.1 ms
0.5 ms
20
10
20
T
= 25
°
C
T = 25°C
J
J
10
1.0 ms
dc
1.0 ms
dc
0.5 ms
5.0
5.0
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
2.0
1.0
0.5
2.0
1.0
0.5
@ T = 25
°
C (SINGLE PULSE)
@ T = 25
°
C (SINGLE PULSE)
C
C
0.2
0.1
0.2
0.1
BDW46
BDW47
BDW42
20
0.05
0.05
1.0
2.0 3.0
5.0 7.0 10
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 5. BDW42
Figure 6. BDW46 and BDW47
down pulse limits are valid for duty cycles to 10% provided
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
T
J(pk)
200 C. T may be calculated from the data in
J(pk)
down. Safe operating area curves indicate I – V
limits of the
Fig. 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the li-
mitations imposed by second breakdown.
C
CE
transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate. The data of Fig. 5 and 6 is based on T
200 C; T is variable depending on conditions. Second break-
C
=
* Linear extrapolation
J(pk)
10,000
300
T
= + 25°C
J
5000
3000
2000
200
1000
500
300
200
C
100
70
ob
T
= 25°C
J
V
I
= 3.0 V
CE
= 3.0 A
C
ib
100
C
50
50
BDW46, 47 (PNP)
BDW42 (NPN)
BDW46, 47 (PNP)
BDW42 (NPN)
30
20
10
30
1.0
2.0
5.0
10
20
50
100 200
500 1000
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
V
, REVERSE VOLTAGE (VOLTS)
f, FREQUENCY (kHz)
R
Figure 7. Small–Signal Current Gain
Figure 8. Capacitance
3–214
Motorola Bipolar Power Transistor Device Data
BDW40, 41, 42 (NPN)
BDW45, 46, 47 (PNP)
20,000
10,000
20,000
10,000
V
= 3.0 V
V
= 3.0 V
CE
CE
7000
5000
T
= 150°C
5000
J
T
= 150°C
J
3000
2000
3000
2000
25°C
25°C
1000
500
1000
–55°C
700
500
–55°C
300
200
300
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 9. DC Current Gain
3.0
2.6
2.2
3.0
T
J
= 25°C
T
= 25°C
J
2.6
2.2
I
= 2.0 A
4.0 A
6.0 A
I
= 2.0 A
4.0 A
6.0 A
C
C
1.8
1.8
1.4
1.4
1.0
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I
, BASE CURRENT (mA)
I , BASE CURRENT (mA)
B
B
Figure 10. Collector Saturation Region
BDW40, 41, 42 (NPN)
BDW45, 46, 47 (PNP)
3.0
2.5
3.0
T
J
= 25°C
T
= 25
°
C
J
2.5
2.0
2.0
1.5
V
@ I /I = 250
C B
BE(sat)
V
@ V = 4.0 V
CE
1.5
1.0
0.5
BE
V
@ V = 4.0 V
CE
BE
V
@ I /I = 250
C B
BE(sat)
1.0
0.5
V
@ I /I = 250
C B
CE(sat)
V
@ I /I = 250
C B
CE(sat)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
, COLLECTOR CURRENT (AMP)
C
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (AMP)
I
C
Figure 11. “On” Voltages
3–215
Motorola Bipolar Power Transistor Device Data
+5.0
+5.0
+4.0
+3.0
+2.0
+1.0
+4.0
+3.0
+2.0
+1.0
*I /I
C B
250
*I /I
C B
250
+25°C to 150°C
25°C to 150°C
–55°C to 25°C
0
–1.0
–2.0
0
*θ
for V
–1.0
VC
CE(sat)
*
θ
for V
VC CE(sat)
–2.0
–3.0
–4.0
–5.0
–55°C to +25°C
25
°
C to 150°C
θ
for V
BE
VB
+25°C to 150°C
–3.0
–4.0
–55°C to +25
°C
θ
for V
BE
VB
–55°C to 25°C
–5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5
I , COLLECTOR CURRENT (AMP)
C
1.0
2.0 3.0
5.0
10
I
, COLLECTOR CURRENT (AMP)
C
Figure 12. Temperature Coefficients
5
4
3
5
4
3
2
10
10
10
10
10
10
10
FORWARD
REVERSE
= 30 V
REVERSE
= 30 V
FORWARD
V
V
CE
CE
2
1
0
10
10
10
T
= 150°C
J
T
= 150°C
J
1
0
10
100°C
100°C
10
25°C
25
°C
–1
–1
10
10
+0.6 +0.4 +0.2
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
–0.6 –0.4 –0.2
0
+0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4
V
, BASE–EMITTER VOLTAGE (VOLTS)
V , BASE–EMITTER VOLTAGE (VOLTS)
BE
BE
Figure 13. Collector Cut–Off Region
NPN
COLLECTOR
PNP
COLLECTOR
BDW42
BDW46
BDW47
BASE
BASE
8.0 k
60
8.0 k
60
EMITTER
EMITTER
Figure 14. Darlington Schematic
3–216
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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BDW42/D
◊
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