BF224 [MOTOROLA]
RF Transistor; RF晶体管
| 型号： | BF224 |
| 厂家： | 
MOTOROLA |
| 描述： | RF Transistor |
| 文件： | 总6页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BF224/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
3
BASE
2
EMITTER
MAXIMUM RATINGS
1
2
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
30
Unit
3
V
CEO
V
CBO
V
EBO
Vdc
Vdc
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
45
4.0
50
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
357
125
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V
V
Vdc
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
30
45
4.0
—
—
—
—
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = 100 Adc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 100 Adc, I = 0)
V
Vdc
(BR)EBO
—
E
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
nAdc
nAdc
CBO
100
100
CB
Emitter Cutoff Current
(V = 3.0 Vdc, I = 0)
E
I
EBO
—
EB
C
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 7.0 mAdc, V
C CE
h
—
FE
= 10 Vdc)
30
—
—
—
0.77
—
—
0.9
Base–Emitter On Voltage
(I = 7.0 mAdc, V = 10 Vdc)
V
mVdc
Vdc
BE(on)
CE(sat)
C
CE
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
0.15
C
B
SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
f
T
MHz
(I = 1.5 mAdc, V
= 10 Vdc, f = 100 MHz)
= 10 Vdc, f = 100 MHz)
300
—
600
850
—
—
C
CE
CE
(I = 7.0 mAdc, V
C
Common Emitter Feedback Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
pF
dB
re
—
0.28
—
CE
Noise Figure
(I = 1.0 mAdc, V
E
N
f
= 10 Vdc, R = 50 Ω, f = 100 MHz)
—
—
2.5
3.5
—
—
C
CE
CE
S
(I = 1.0 mAdc, V
C
= 10 Vdc, R = 50 Ω, f = 200 MHz)
S
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1000
700
10
2
BF224
V
= 10 V
CE
= 25°C
T
A
500
300
200
C
ib
100
1
C
ob
0.7
0.5
0.4
0.3
C
@ I = 0
E
re
20
10
0.2
0.2 0.3 0.5 0.7 1
3
5
10
20
100
0.1
0.2
0.5
1
3
5
10
V , REVERSE VOLTAGE (VOLTS)
R
20
I
, COLLECTOR CURRENT (mA)
C
Figure 1. Current–Gain — Bandwidth Product
Figure 2. Capacitances
100
50
V
T
= 10 V
V
= 10 V
CE
= 25
CE
°C
A
100 MHz
200
20
10
5
100
70
BF224
50
45 MHz
30
20
10.7 MHz
470 kHz < 0.2 mmhos
2
1
b
11e
10
0.1
0.2 0.3 0.5 0.7 1
2
3
5
7
10
20
2
3
4
5
6
7
8
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 3. DC Current Gain
Figure 4. b11e
–100
–50
2000
1000
500
100 MHz
V
= 10 V
CE
100 MHz
V
= 10 V
CE
45 MHz
–20
–10
–5
45 MHz
200
100
50
10.7 MHz
10.7 MHz
–2
–1
b
, at 470 kHz < 0.5 mmhos
470 kHz
21e
20
2
3
4
5
6
7
8
1
2
3
4
5
6
7
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 5. b21e
Figure 6. b22e (boe)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
10
5
200
100 MHz
V
= 10 V
CE
V
= 10 V
CE
100
50
45 MHz
10.7 MHz
470 kHz
f = 0.47 to 45 MHz
2
1
20
10
5
0.5
0.2
0.1
2
2
3
4
5
6
7
8
1
2
3
4
5
6
7
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 7. g11e (gie)
Figure 8. g21e (Yfe)
200
V
= 10 V
CE
100 MHz
100
50
45 MHz
10.7 MHz
470 kHz
20
10
5
2
1
2
3
4
5
6
7
I
, COLLECTOR CURRENT (mA)
C
Figure 9. g22e (goe)
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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BF224/D
◊
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