BF423 [MOTOROLA]
High Voltage Transistors(PNP); 高电压晶体管（ PNP）
| 型号： | BF423 |
| 厂家： | 
MOTOROLA |
| 描述： | High Voltage Transistors(PNP) |
| 文件： | 总4页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by BF421/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Symbol
BF421
–300
BF423
–250
Unit
Vdc
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
–300
–250
Vdc
–5.0
Vdc
Collector Current — Continuous
I
C
–500
mAdc
Total Device Dissipation
P
625
5.0
mW
mW/°C
D
D
@ T = 25°C
A
Derate above 25°C
Total Device Dissipation
P
1.5
12
Watts
mW/°C
@ T = 25°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
J stg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
200
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
(I = –1.0 mAdc, I = 0)
V
Vdc
(BR)CEO
BF421
BF423
–300
–250
—
—
C
B
Collector–Base Breakdown Voltage
(I = –100 Adc, I = 0)
V
Vdc
Vdc
(BR)CBO
BF421
BF423
–300
–250
—
—
C
E
Emitter–Base Breakdown Voltage
(I = –100 Adc, I = 0)
V
(BR)EBO
BF421
BF423
–5.0
–5.0
—
—
E
C
Collector Cutoff Current
(V = –200 Vdc, I = 0)
I
Adc
CBO
BF421
BF423
—
—
–0.01
—
CB
E
Emitter Cutoff Current
(V = –5.0 Vdc, I = 0)
I
nAdc
EBO
BF421
BF423
—
—
–100
—
EB
C
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
(I = –25 mA, V
C CE
h
FE
—
= –20 Vdc)
BF421
BF423
50
50
—
—
Collector–Emitter Saturation Voltage
(I = –20 mAdc, I = –2.0 mAdc)
V
V
—
–0.5
Vdc
Vdc
CE(sat)
C
B
Base–Emitter Saturation Voltage
(I = –20 mA, I = –2.0 mA)
—
–2.0
BE(sat)
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
60
—
—
MHz
pF
T
(I = –10 mAdc, V
C CE
= –10 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance
(V = –30 Vdc, I = 0, f = 1.0 MHz)
C
2.8
re
CB
E
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150
100
T
= +125°C
J
V
= –10 Vdc
CE
+25°C
70
50
–55°C
30
20
15
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–80
–100
I
, COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
100
50
100
T
V
= 25°C
J
80
= –20 Vdc
CE
C
ib
60
20
10
40
30
5.0
20
2.0
1.0
C
cb
0
–1.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000
, REVERSE VOLTAGE (VOLTS)
–100
–2.0
–5.0
–10
–20
–50
V
I
, COLLECTOR CURRENT (mA)
R
C
Figure 2. Capacitances
Figure 3. Current–Gain — Bandwidth Product
–1.0
–0.8
–500
100 µs
1.0 ms
1.0 s
–200
–100
–50
V
@ V = –10 V
CE
BE
–0.6
–0.4
–0.2
0
BF423
1.5 WATT THERMAL
BF421
LIMITATION @ T = 25°C
C
625 mW THERMAL
–20
–10
LIMITATION @ T = 25°C
A
BONDING WIRE LIMITATION
SECOND BREAKDOWN
V
@ I /I = 10 mA
C B
CE(sat)
T
= 150°C
LIMITATION
J
–5.0
–100
–100
–200 –300
–1.0
–2.0
–5.0
–10
–20
–50
–3.0
–5.0
–10
–20 –30
–50
I
, COLLECTOR CURRENT (mA)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
CE
Figure 4. “On” Voltages
Figure 5. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 14:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. COLLECTOR
3. BASE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
BF421/D
◊
相关型号：
BF423,116
TRANSISTOR 50 mA, 250 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
NXP
BF423-AMMO
TRANSISTOR 50 mA, 250 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP
BF423-AP
Small Signal Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
BF423-BP
Small Signal Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
©2020 ICPDF网 联系我们和版权申明