BUL45F [MOTOROLA]
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS; 功率晶体管5.0安培700伏35和75瓦型号: | BUL45F |
厂家: | MOTOROLA |
描述: | POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS |
文件: | 总10页 (文件大小:395K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by BUL45/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
High Voltage SWITCHMODE Series
POWER TRANSISTOR
5.0 AMPERES
Designed for use in electronic ballast (light ballast) and in Switchmode Power
supplies up to 50 Watts. Main features include:
700 VOLTS
35 and 75 WATTS
•
Improved Efficiency Due to:
— Low Base Drive Requirements (High and Flat DC Current Gain h
— Low Power Losses (On–State and Switching Operations)
)
FE
— Fast Switching: t = 100 ns (typ) and t = 3.2 µs (typ)
fi si
— Fast Switching: @ I = 2.0 A, I = I = 0.4 A
C
B1 B2
•
•
•
Full Characterization at 125°C
Tight Parametric Distributions Consistent Lot–to–Lot
BUL45F, Case 221D, is UL Recognized at 3500 V
: File #E69369
RMS
MAXIMUM RATINGS
Rating
Symbol
BUL45
BUL45F
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
CEO
400
700
9.0
BUL45
CASE 221A–06
TO–220AB
V
CES
EBO
V
Collector Current — Continuous
— Peak(1)
I
C
5.0
10
I
CM
Base Current
I
B
2.0
Adc
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
V
ISOL
—
—
—
4500
3500
1500
Volts
T
C
= 25°C)
Total Device Dissipation
Derate above 25°C
(T = 25°C)
C
P
D
75
0.6
35
0.28
Watts
W/°C
Operating and Storage Temperature
T , T
J stg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Rating
BUL45F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
Symbol MJE18006 MJF18006
Unit
Thermal Resistance — Junction to Case
R
θJC
R
θJA
1.65
62.5
3.55
62.5
°C/W
— Junction to Ambient
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
400
—
—
—
—
Vdc
µAdc
µAdc
C
CEO(sus)
Collector Cutoff Current (V
Collector Cutoff Current (V
= Rated V
, I = 0)
I
CEO
100
CE
CEO
B
= Rated V
, V
= 0)
I
—
—
—
—
10
100
CE
CES EB
CES
(T = 125°C)
C
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I = 0)
I
—
—
100
µAdc
C
EBO
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (I = 1.0 Adc, I = 0.2 Adc)
V
—
—
0.84
0.89
1.2
1.25
Vdc
Vdc
C
B
BE(sat)
(I = 2.0 Adc, I = 0.4 Adc)
C
B
Collector–Emitter Saturation Voltage
V
CE(sat)
(I = 1.0 Adc, I = 0.2 Adc)
—
—
0.175
0.150
0.25
—
C
B
(T = 125°C)
C
Collector–Emitter Saturation Voltage
(I = 2.0 Adc, I = 0.4 Adc)
V
Vdc
—
CE(sat)
—
—
0.25
0.275
0.4
—
C
B
(T = 125°C)
C
DC Current Gain (I = 0.3 Adc, V
C
= 5.0 Vdc)
= 1.0 Vdc)
h
FE
14
—
7.0
5.0
10
—
32
14
12
22
34
—
—
—
—
CE
(T = 125°C)
C
DC Current Gain (I = 2.0 Adc, V
C
CE
(T = 125°C)
C
DC Current Gain (I = 10 mAdc, V
C
= 5.0 Vdc)
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.5 Adc, V
= 10 Vdc, f = 1.0 MHz)
= 10 Vdc, I = 0, f = 1.0 MHz)
f
—
—
—
12
50
—
75
MHz
pF
C
CE
T
Output Capacitance (V
CB
C
E
ob
Input Capacitance (V
EB
= 8.0 Vdc)
C
920
1200
pF
ib
Dynamic Saturation Voltage:
—
—
1.75
4.4
—
—
1.0 µs
3.0 µs
1.0 µs
3.0 µs
(I = 1.0 Adc
(T = 125°C)
C
C
I
V
= 100 mAdc
Determined 1.0 µs and
3.0 µs respectively after
B1
—
—
0.5
1.0
—
—
= 300 V)
CC
(T = 125°C)
C
V
rising I reaches 90%
B1
CE
(Dyn sat)
Vdc
of final I
(see Figure 18)
B1
—
—
1.85
6.0
—
—
(I = 2.0 Adc
(T = 125°C)
C
C
I
= 400 mAdc
= 300 V)
B1
—
—
0.5
1.0
—
—
V
CC
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Resistive Load
Turn–On Time
Turn–Off Time
(I = 2.0 Adc, I = I = 0.4 Adc
Pulse Width = 20 µs,
Duty Cycle < 20%
t
t
—
—
75
120
110
—
ns
C
B1 B2
on
(T = 125°C)
C
—
—
2.8
3.5
3.5
—
µs
V
CC
= 300 V)
off
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Inductive Load (V
CC
= 15 Vdc, L = 200 µH, V
clamp
= 300 Vdc)
C
Fall Time
(I = 2.0 Adc, I = 0.4 Adc
t
70
—
—
200
170
—
ns
µs
ns
ns
µs
ns
ns
µs
ns
C
B1
fi
I
= 0.4 Adc)
(T = 125°C)
B2
C
Storage Time
Crossover Time
Fall Time
t
si
2.6
—
—
4.2
3.8
—
(T = 125°C)
C
t
c
—
—
230
400
350
—
(T = 125°C)
C
(I = 1.0 Adc, I = 100 mAdc
t
fi
—
—
110
100
150
—
C
B2
B1
I
= 0.5 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
—
—
1.1
1.5
1.7
—
(T = 125°C)
C
t
c
—
—
170
170
250
—
(T = 125°C)
C
(I = 2.0 Adc, I = 250 mAdc
t
fi
—
—
—
80
0.6
175
120
C
B2
B1
I
= 2.0 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
t
si
0.9
(T = 125°C)
C
t
c
300
(T = 125°C)
C
2
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
100
100
V
= 1 V
V
= 5 V
CE
CE
T
= 25°C
T
= 25°C
J
J
T
= 125°C
T = 125°C
J
J
T
= –20°C
T
= –20°C
J
J
10
10
1
0.01
1
0.01
0.10
1.00
10.00
0.10
I , COLLECTOR CURRENT (AMPS)
C
1.00
10.00
I
, COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain at @ 5 Volts
2.0
1.5
1.0
10
T
= 25°C
J
1.0
1.5
A
1 A
2A
3 A
4 A 5 A
6 A
I
/I = 10
C B
0.1
0.5
0
T
T
= 25°C
= 125°C
J
J
I
/I = 5
C B
I
= 0.5 A
C
0.01
0.01
0.10
1.00
10.00
0.01
0.10
I , COLLECTOR CURRENT (AMPS)
C
1.00
10.00
I
, BASE CURRENT (AMPS)
B
Figure 3. Collector–Emitter Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
1.1
10000
1000
T
= 25°C
J
1.0
0.9
f = 1 MHz
C
ib
0.8
0.7
C
ob
100
10
1
T
J
= 25°C
J
0.6
0.5
0.4
T
= 125°C
I
/I = 10
C B
I
/I = 5
C B
0.01
0.10
1.00
10.00
1
10
100
1000
I
, COLLECTOR CURRENT (AMPS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
CE
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
3
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(I
= I /2 for all switching)
B2
C
1200
1000
800
3000
2500
2000
I
V
= I /2
C
B(off)
CC
T
T
= 25
= 125
°
C
I
V
= I /2
= 300 V
J
J
B(off) C
CC
T
T
= 25°C
= 125°C
= 300 V
J
J
°C
I
/I = 5
C B
PW = 20 µs
PW = 20 µs
I
/I = 10
C B
I
/I = 10
C B
600
1500
1000
400
200
0
500
0
I
/I = 5
C B
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
I , COLLECTOR CURRENT (AMPS)
C
6
7
8
I
, COLLECTOR CURRENT (AMPS)
C
Figure 7. Resistive Switching, t
Figure 8. Resistive Switching, t
off
on
3500
3000
2500
2000
1500
1000
3500
3000
2500
2000
1500
1000
500
I
L
V
V
= I /2
B(off)
= 200
C
T
T
= 25°C
= 125°C
V
= 300 V
= 15 V
J
J
Z
µH
C
V
I
L
CC
B(off)
= 300 V
= 15 V
Z
CC
= I /2
I
/I = 5
C
C B
= 200 µH
C
I
= 1 A
C
T
T
= 25°C
= 125°C
J
J
500
0
I
= 2 A
7
I
/I = 10
C
C B
0
1
2
3
4
5
3
4
5
6
8
9
10
11 12
13
14 15
I
, COLLECTOR CURRENT (AMPS)
h
, FORCED GAIN
C
FE
Figure 9. Inductive Storage Time, t
Figure 10. Inductive Storage Time, t (h
si FE
)
si
300
250
200
150
100
200
150
100
t
t
c
c
I = I /2
B(off) C
V
I
= 15 V
= I /2
CC
B(off)
50
0
V
V
L
= 15 V
CC
t
C
fi
50
0
t
= 300 V
fi
T
T
= 25
= 125
°
C
T
T
= 25
= 125°C
°
C
L
V
= 200
µH
Z
J
J
J
J
C
= 200
µ
H
°C
= 300 V
C
Z
0
1
2
3
4
5
0
1
2
3
4
5
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 11. Inductive Switching, t & t , I /I = 5
fi C B
Figure 12. Inductive Switching, t & t , I /I = 10
fi C B
c
c
4
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(I
= I /2 for all switching)
B2
C
150
140
130
120
110
100
90
300
V
V
I
= 15 V
CC
Z
I
= I /2
C
CC
= 300 V
T
T
= 25°C
B(off)
J
J
= 300 V
= I /2
V
V
L
= 15 V
= 125°C
250
200
150
B(off)
C
Z
C
L
= 200 µH
C
= 200 µH
I
= 1 A
I
= 1 A
C
C
100
50
I
= 2 A
6
T
T
= 25°C
80
C
J
J
I
= 2 A
9
C
= 125°C
70
3
4
5
7
8
9
10
11
12
13
14
15
3
4
5
6
7
8
10 11
12
13
14 15
h
, FORCED GAIN
h
, FORCED GAIN
FE
FE
Figure 13. Inductive Fall Time, t (h
fi FE
)
Figure 14. Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
6
100
10
T
≤ 125°C
/I ≥ 4
= 500 µH
DC (BUL45)
5 ms
C
I
L
5
C B
1 ms
50
µs
10
µs
1 µs
C
4
3
2
EXTENDED
SOA
1.0
DC (BUL45F)
0.1
–5 V
1
0
V
= 0 V
–1.5 V
BE(off)
400
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
0.01
10
100
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
300
500
600
700
800
V
CE
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
1.0
down. Safe operating area curves indicate I – V
limits of
C
CE
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
SECOND BREAKDOWN
DERATING
0.8
0.6
0.4
than the curves indicate. The data of Figure 15 is based on T
C
= 25°C; T
is variable depending on power level. Second
J(pk)
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when T ≥ 25°C. Second breakdown limita-
C
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Fig-
THERMAL DERATING
ure 17. T
may be calculated from the data in Figures 20
J(pk)
0.2
0
and 21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction re-
verse–biased. The safe level is specified as a reverse–biased
safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode.
20
40
60
80
100
120
C)
140
160
T
, CASE TEMPERATURE (
°
C
Figure 17. Forward Bias Power Derating
5
Motorola Bipolar Power Transistor Device Data
10
5
4
V
CE
90% I
I
C
9
8
7
6
5
C
t
fi
3
dyn 1 µs
t
si
2
dyn 3 µs
1
t
10% I
C
c
V
I
10% V
0
CLAMP
CLAMP
–1
–2
–3
–4
–5
4
90% I
B
90% I
B
1
B
3
2
1
0
1 µs
3 µs
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I
PEAK
C
100 µF
1
µ
F
MTP8P10
MUR105
MJE210
100
3 W
Ω
150
3 W
Ω
V
PEAK
CE
V
CE
MTP8P10
MPF930
R
R
B1
I
1
B
I
MPF930
+10 V
out
I
B
A
I
2
B
50
Ω
B2
V(BR)CEO(sus)
L = 10 mH
INDUCTIVE SWITCHING
RBSOA
L = 500
COMMON
MTP12N10
150
Ω
L = 200
µH
µH
3 W
RB2 =
∞
RB2 = 0
RB2 = 0
500 µF
V
= 20 VOLTS
V
= 15 VOLTS
V
= 15 VOLTS
CC
(pk) = 100 mA
CC
RB1 SELECTED FOR
DESIRED I
CC
RB1 SELECTED
FOR DESIRED I
I
C
1 µF
1
1
B
B
–V
off
Table 1. Inductive Load Switching Drive Circuit
6
Motorola Bipolar Power Transistor Device Data
TYPICAL THERMAL RESPONSE
1.00
D = 0.5
0.2
0.1
R
R
(t) = r(t) R
θ
θ
θ
JC
JC
JC
°C/W MAX
0.10
0.01
P
(pk)
= 2.5
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
0.05
0.02
t
t
1
2
1
(t)
T
– T = P R
SINGLE PULSE
J(pk)
C
(pk) θJC
DUTY CYCLE, D = t /t
1 2
0.01
0.10
1.00
10.00
100.00
1000.00
t, TIME (ms)
Figure 20. Typical Thermal Response (Z
θJC
(t)) for BUL45
1.00
D = 0.5
0.2
0.1
R
R
(t) = r(t) R
θ
0.10
0.01
θ
θ
JC
JC
JC
°C/W MAX
P
(pk)
= 5.0
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
t
t
1
0.05
0.02
2
1
T
– T = P R (t)
(pk) θJC
J(pk)
C
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.10
0.01
1.00
10.00
100.00
1000.00
10000.00
100000.00
t, TIME (ms)
Figure 21. Typical Thermal Response (Z
θJC
(t)) for BUL45F
7
Motorola Bipolar Power Transistor Device Data
The BUL45/BUL45F Bipolar Power Transistors were
specially designed for use in electronic lamp ballasts. A
circuit designed by Motorola applications was built to
demonstrate how well these devices operate. The circuit and
detailed component list are provided below.
COLLECTOR CURRENT SENSE
(USE EXTERNAL STRAPS)
C5 400 V
Q1
D5
I
C
0.1 µF
MUR150
22
µ
F
385 V
1000 V
47
Ω
D3
C1
15 µF
470 k
Ω
1
Ω
T1A
D10
D9
D7
TUBE
C4
T1B
Q2
1N4007
D1
D8
D6
47
I
FUSE
C
C3 1000 V
400 V
0.1
Ω
MUR150
D4
C2
C6
10 nF
µ
F
L
5.5 mH
CTN
0.1
µF
100 V
D2
1N5761
AC LINE
220 V
1
Ω
Components Lists
Q1 = Q2 = BUL45 Transistor
D1 = 1N4007 Rectifier
D2 = 1N5761 Rectifier
D3 = D4 = MUR150
D5 = D6 = MUR105
D7 = D8 = D9 = D10 = 1N400
All resistors are 1/4 Watt, ±5%
R1 = 470 kΩ
R2 = R3 = 47 Ω
R4 = R5 = 1 Ω (these resistors are optional, and
might be replaced by a short circuit)
C1 = 22 µF/385 V
CTN = 47 Ω @ 25°C
C2 = 0.1 µF
L = RM10 core, A1 = 400, B51 (LCC) 75 turns,
wire = 0.6 mm
C3 = 10 nF/1000 V
C4 = 15 nF/1000 V
T1 = FT10 toroid, T4A (LCC)
Primary: 4 turns
C5 = C6 = 0.1 µF/400 V
Secondaries: T1A: 4 turns
Secondaries: T1B: 4 turns
NOTES:
1. Since this design does not include the line input filter, it cannot be used “as–is” in a practical industrial circuit.
2. The windings are given for a 55 Watt load. For proper operation they must be re–calculated with any other loads.
Figure 22. Application Example
8
Motorola Bipolar Power Transistor Device Data
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
CLIP
0.107
″
MIN
0.107″ MIN
PACKAGE
LEADS
LEADS
LEADS
HEATSINK
0.110 MIN
HEATSINK
HEATSINK
″
Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position
for Isolation Test Number 1 for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION**
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw–Mounted
Figure 23b. Clip–Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
.
torque of 6 to 8 in lbs is sufficientto provide maximum power dissipation capability. The compression washer helps to maintain a constant
pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will
.
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
.
Additionaltests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affectingthepackage.
.
However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in lbs
of mounting torque under any mounting conditions.
**For more information about mounting power semiconductors see Application Note AN1040.
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
9
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
STYLE 1:
PIN 1. BASE
2. COLLECTOR
L
R
J
3. EMITTER
4. COLLECTOR
V
G
T
U
V
D
N
Z
0.080
2.04
BUL45
CASE 221A–06
TO–220AB
ISSUE Y
SEATING
–T–
PLANE
–B–
C
NOTES:
F
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
Q
H
U
INCHES
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MIN
MAX
0.629
0.402
0.189
0.034
0.129
MIN
15.78
10.01
4.60
MAX
15.97
10.21
4.80
A
K
0.621
0.394
0.181
0.026
0.121
1
2 3
0.67
0.86
STYLE 2:
3.08
3.27
PIN 1. BASE
2. COLLECTOR
3. EMITTER
–Y–
0.100 BSC
2.54 BSC
0.123
0.018
0.500
0.045
0.129
0.025
0.562
0.060
3.13
0.46
3.27
0.64
12.70
1.14
14.27
1.52
G
N
J
0.200 BSC
5.08 BSC
R
0.126
0.107
0.096
0.259
0.134
0.111
0.104
0.267
3.21
2.72
2.44
6.58
3.40
2.81
2.64
6.78
L
D 3 PL
U
M
M
0.25 (0.010)
B
Y
BUL45F
CASE 221D–02
(ISOLATED TO–220 TYPE)
ISSUE D
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BUL45/D
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