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BUZ11AL [MOTOROLA]

25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB;
BUZ11AL
型号: BUZ11AL
厂家: MOTOROLA    MOTOROLA
描述:

25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

文件: 总2页 (文件大小:70K)
中文:  中文翻译
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相关型号:

BUZ11AL-E3044

Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ11AL-E3045

Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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BUZ11AL-E3046

Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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BUZ11AN

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BUZ11AS

25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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BUZ11AT

25 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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BUZ11AU

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BUZ11AU2

Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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BUZ11AUA

25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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BUZ11AW

Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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BUZ11AWC

Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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BUZ11C

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BUZ11CHIP

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BUZ11CHP

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BUZ11D1

Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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BUZ11FI

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BUZ11L

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BUZ11N

Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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BUZ11S

Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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BUZ11S2

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