BZX85B33TA [MOTOROLA]
33V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, HERMETIC SEALED, GLASS, CASE 59-03, 2 PIN;型号: | BZX85B33TA |
厂家: | MOTOROLA |
描述: | 33V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, HERMETIC SEALED, GLASS, CASE 59-03, 2 PIN |
文件: | 总6页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
BZX85C3V3RL
SERIES
1–1.3 Watt DO-41 Glass
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
1–1.3 WATT
DO-41 GLASS
One Watt Hermetically Sealed Glass
Silicon Zener Diodes
1 WATT
ZENER REGULATOR
DIODES
3.3–100 VOLTS
Specification Features:
• Complete Voltage Range — 3.3 to 100 Volts
• DO-41 Package
• Double Slug Type Construction
• Metallurgically Bonded Construction
• Oxide Passivated Die
Mechanical Characteristics:
CASE: Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from
case for 10 seconds
FINISH: All external surfaces are corrosion resistant with readily solderable leads
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
CASE 59-03
DO-41
GLASS
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Power Dissipation @ T = 50°C
Derate above 50°C
P
D
1
6.67
Watt
mW/°C
A
Operating and Storage Junction Temperature Range
T , T
– 65 to +200
°C
J
stg
1.25
1
L = LEAD LENGTH
TO HEAT SINK
L = 1
″
L = 1/8
L = 3/8
″
″
0.75
0.5
0.25
0
20
40
60
80
100
120
140
C)
160 180
200
T , LEAD TEMPERATURE (
°
L
Figure 1. Power Temperature Derating Curve
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-1
GENERAL DATA — 500 mW DO-35 GLASS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.) (V = 1.2 V Max, I = 200 mA for all types.)
A
F
F
Zener Voltage
(V)
Zener Impedance
Leakage
Current
(µA)
V
Z (ohms)
Surge
Current
ZT
(Notes 2 and 3)
Z
(Note 4)
Test
Current
T
= 25°C
i (mA)
A
r
Max at I
Z
Type
(Note 1)
V
Min
V
Max
Max
at I
I
R
Max
I
Z
Z
ZT
(mA)
(mA)
V (V)
R
(Note 5)
ZT
BZX85C3V3RL
BZX85C3V6RL
BZX85C3V9RL
BZX85C4V3RL
BZX85C4V7RL
3.1
3.4
3.7
4
3.5
3.8
4.1
4.6
5
80
60
60
50
45
20
15
15
13
13
400
500
500
500
600
1
1
1
1
1
1
1
1
1
1.5
60
30
5
3
3
1380
1260
1190
1070
970
4.4
BZX85C5V1RL
BZX85C5V6RL
BZX85C6V2RL
BZX85C6V8RL
BZX85C7V5RL
4.8
5.2
5.8
6.4
7
5.4
6
6.6
7.2
7.9
45
45
35
35
35
10
7
4
3.5
3
500
400
300
300
200
1
1
1
1
0.5
2
2
3
4
4.5
1
1
1
1
1
890
810
730
660
605
BZX85C8V2RL
BZX85C9V1RL
BZX85C10RL
BZX85C12RL
7.7
8.5
9.4
8.7
9.6
10.6
12.7
25
25
25
20
5
5
7
9
200
200
200
350
0.5
0.5
0.5
0.5
5
6.5
7
1
1
0.5
0.5
550
500
454
380
11.4
8.4
BZX85C13RL
BZX85C15RL
BZX85C16RL
BZX85C18RL
12.4
13.8
15.3
16.8
14.1
15.6
17.1
19.1
20
15
15
15
10
15
15
20
400
500
500
500
0.5
0.5
0.5
0.5
9.1
10.5
11
0.5
0.5
0.5
0.5
344
304
285
250
12.5
BZX85C22RL
BZX85C24RL
BZX85C27RL
BZX85C30RL
BZX85C33RL
20.8
22.8
25.1
28
23.3
25.6
28.9
32
10
10
8
8
8
25
25
30
30
35
600
600
750
1000
1000
0.5
0.5
0.25
0.25
0.25
15.5
17
19
21
23
0.5
0.5
0.5
0.5
0.5
205
190
170
150
135
31
35
BZX85C36RL
BZX85C43RL
BZX85C47RL
34
40
44
38
46
50
8
6
4
40
50
90
1000
1000
1500
0.25
0.25
0.25
25
30
33
0.5
0.5
0.5
125
110
95
BZX85C56RL
BZX85C62RL
BZX85C75RL
BZX85C82RL
BZX85C100RL
52
58
70
77
96
60
66
80
4
4
4
2.7
2.7
120
125
150
200
350
2000
2000
2000
3000
3000
0.25
0.25
0.25
0.25
0.25
39
43
51
56
68
0.5
0.5
0.5
0.5
0.5
80
70
60
55
45
87
106
NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION
NOTE 4. ZENER IMPEDANCE (Z ) DERIVATION
Z
The type numbers listed have zener voltage min/max limits as shown. Device tolerance of
±2% are indicated by a “B” instead of “C.”
The zener impedance is derived from the 1 kHz cycle ac voltage, which results when an ac
current having an rms value equal to 10% of the dc zener current (I ) or (I ) is superim-
ZT
ZK
posed on I
or I .
ZK
ZT
NOTE 2. SPECIALS AVAILABLE INCLUDE:
Nominal zener voltages between the voltages shown and tighter voltage tolerances.
For detailed information on price, availability, and delivery, contactyournearestMotorolarep-
resentative.
NOTE 5. SURGE CURRENT (i ) NON-REPETITIVE
r
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, re-
verse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second dura-
NOTE 3. ZENER VOLTAGE (V ) MEASUREMENT
Z
V
is measured after the test current has been applied to 40 ± 10 msec., while maintaining
tion superimposed on the test current I . However, actual device capability is as described
Z
ZT
the lead temperature (T ) at 30°C ± 1°C, 3/8″ from the diode body.
in Figure 5 of General Data DO-41 glass.
L
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-2
GENERAL DATA — 500 mW DO-35 GLASS
a. Range for Units to 12 Volts
b. Range for Units to 12 to 100 Volts
100
70
50
+12
+10
+8
30
20
+6
+4
+2
0
RANGE
V @ I
Z
10
7
5
ZT
V
@ I
10
RANGE
Z
ZT
3
2
–2
–4
1
10
2
3
4
5
6
7
8
9
11
12
20
30
50
70 100
V , ZENER VOLTAGE (VOLTS)
V , ZENER VOLTAGE (VOLTS)
Z
Z
Figure 2. Temperature Coefficients
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
+6
175
150
125
100
75
V
A
@ I
Z
Z
+4
+2
T
= 25°C
20 mA
0
0.01 mA
50
1 mA
–2
–4
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
25
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
3
4
5
6
7
8
L, LEAD LENGTH TO HEAT SINK (INCHES)
V , ZENER VOLTAGE (VOLTS)
Z
Figure 3. Typical Thermal Resistance
versus Lead Length
Figure 4. Effect of Zener Current
100
70
50
RECTANGULAR
WAVEFORM
11 V–100 V NONREPETITIVE
3.3 V–10 V NONREPETITIVE
T
= 25°C PRIOR TO
J
30
20
5% DUTY CYCLE
INITIAL PULSE
10
7
10% DUTY CYCLE
5
20% DUTY CYCLE
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
Figure 5. Maximum Surge Power
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-3
GENERAL DATA — 500 mW DO-35 GLASS
1000
500
1000
T
= 25°C
T
= 25°C
J
700
500
J
i (rms) = 0.1 I (dc)
V
= 2.7 V
i (rms) = 0.1 I (dc)
Z
Z
Z
Z
Z
f = 60 Hz
f = 60 Hz
I
= 1 mA
Z
200
200
100
47 V
27 V
100
50
5 mA
70
50
20 mA
20
10
20
10
7
5
6.2 V
5
2
1
2
1
0.1
0.2
0.5
1
2
5
10
20
50 100
1
2
3
5
7
10
20
30
50 70 100
I , ZENER CURRENT (mA)
V , ZENER CURRENT (mA)
Z
Z
Figure 6. Effect of Zener Current
on Zener Impedance
Figure 7. Effect of Zener Voltage
on Zener Impedance
10000
7000
5000
400
300
200
100
50
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
2000
1000
0 V BIAS
1 V BIAS
700
500
200
20
100
70
50
10
8
50% OF BREAKDOWN BIAS
20
4
10
7
1
2
5
10
20
50
100
V , NOMINAL V (VOLTS)
5
Z
Z
Figure 9. Typical Capacitance versus V
Z
2
1
0.7
0.5
1000
MINIMUM
MAXIMUM
500
200
100
50
+125°C
0.2
0.1
0.07
0.05
0.02
20
10
5
75°C
0.01
0.007
0.005
+25°C
25°C
150°C
0°C
0.002
0.001
2
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
3
4
5
6
7
8
9
10
11
12
13
14 15
V , NOMINAL ZENER VOLTAGE (VOLTS)
V , FORWARD VOLTAGE (VOLTS)
Z
F
Figure 8. Typical Leakage Current
Figure 10. Typical Forward Characteristics
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-4
GENERAL DATA — 500 mW DO-35 GLASS
APPLICATION NOTE
Since the actual voltage available from a given zener diode
temperature and may be found as follows:
is temperature dependent, it is necessary to determine junc-
tiontemperatureunderanysetofoperatingconditionsinorder
to calculate its value. The following procedure is recom-
mended:
∆T = θ P .
JL JL D
θ
may be determined from Figure 3 for dc power condi-
JL
tions. For worst-case design, using expected limits of I , limits
Z
ofP andtheextremesofT (∆T )maybeestimated.Changes
D
J
J
Lead Temperature, T , should be determined from:
L
in voltage, V , can then be found from:
Z
T = θ
L
P
LA D
+ T .
A
∆V = θ
∆T .
J
VZ
, the zener voltage temperature coefficient, is found from
θ
isthelead-to-ambientthermalresistance(°C/W)andP is
LA
D
θ
VZ
Figure 2.
Under high power-pulse operation, the zener voltage will
the power dissipation. The value forθ willvaryanddepends
onthedevicemountingmethod.θ isgenerally30to40°C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
LA
LA
vary with time and may also be affected significantly by the
zenerresistance. Forbestregulation, keepcurrentexcursions
as low as possible.
Surge limitations are given in Figure 5. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be ex-
tremely high in small spots, resulting in device degradation
should the limits of Figure 5 be exceeded.
The temperature of the lead can also be measured using a
thermocoupleplacedontheleadascloseaspossibletothetie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of T , the junction temperature may be deter-
L
mined by:
T = T + ∆T .
JL
J
L
∆T is the increase in junction temperature above the lead
JL
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-5
GENERAL DATA — 500 mW DO-35 GLASS
Zener Voltage Regulator Diodes — Axial Leaded
1–1.3 Watt DO-41 Glass
B
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
D
K
DIMENSION.
F
MILLIMETERS
INCHES
DIM
A
B
D
F
MIN
4.07
2.04
0.71
—
MAX
5.20
2.71
0.86
1.27
—
MIN
MAX
0.205
0.107
0.034
0.050
—
A
K
0.160
0.080
0.028
—
F
K
27.94
1.100
CASE 59-03
DO-41
GLASS
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MULTIPLE PACKAGE QUANTITY (MPQ)
REQUIREMENTS
Package Option
Type No. Suffix
MPQ (Units)
Tape and Reel
RL, RL2
TA, TA2
6K
4K
Tape and Ammo
NOTE: 1. The “2” suffix refers to 26 mm tape spacing.
(Refer to Section 10 for more information on Packaging Specifications.)
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-6
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