FF224B [MOTOROLA]

40 MHz - 550 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER;
FF224B
型号: FF224B
厂家: MOTOROLA, INC    MOTOROLA, INC
描述:

40 MHz - 550 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

放大器 射频 微波 功率放大器
文件: 总2页 (文件大小:38K)
下载:  下载PDF数据表文档文件

FF225R12ME3

EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode

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49 INFINEON

FF225R12ME4

EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled HE diode and NTC

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118 INFINEON

FF225R12ME4_B11

EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC

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25 INFINEON

FF225R12ME4B11BPSA1

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF225R12ME4BOSA1

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF225R12MS4

EconoDUAL3 module with fast IGBT2 for high switching frequency

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22 INFINEON

FF225R12MS4ENG

暂无描述

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0 INFINEON

FF225R17ME3

EconoDUAL module with trench/fieldstop IGBT3 and EmCon3 diode

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20 INFINEON

FF225R17ME3BOSA1

Insulated Gate Bipolar Transistor, 340A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF225R17ME4

EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled 3 diode

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110 INFINEON

FF225R17ME4_B11

EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled diode and PressFIT / NTC

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31 INFINEON

FF225R17ME4B11BOSA1

Insulated Gate Bipolar Transistor, 340A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF225R17ME4PB11BPSA1

Insulated Gate Bipolar Transistor, 340A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF22E-084B-R13A

0.3mm Pitch Solid Back Lock FPC Connector

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76 DDK

FF22E-092B-R13A

0.3mm Pitch Solid Back Lock FPC Connector

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37 DDK