IRF630WC [MOTOROLA]

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;
IRF630WC
型号: IRF630WC
厂家: MOTOROLA    MOTOROLA
描述:

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

文件: 总2页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRF630_06

N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET
STMICROELECTR

IRF631

N-Channel Power MOSFETs, 12A, 150-200 V
FAIRCHILD

IRF631

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
SAMSUNG

IRF631

9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
RENESAS

IRF631

Trans MOSFET N-CH 150V 9A
NJSEMI

IRF631-001

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF631-001PBF

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF631-002

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF631-003

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON

IRF631-004

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON

IRF631-004PBF

9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET
INFINEON

IRF631-005

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON