MAC15D [MOTOROLA]
TRIACS 15 AMPERES RMS 400 thru 800 VOLTS; 双向可控硅15安培RMS 400通800伏
| 型号： | MAC15D |
| 厂家： | 
MOTOROLA |
| 描述： | TRIACS 15 AMPERES RMS 400 thru 800 VOLTS |
| 文件： | 总4页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
TRIACS
15 AMPERES RMS
400 thru 800
VOLTS
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 15 Amperes RMS at 80°C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt — 250 V/µs minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
MT2
High Commutating di/dt — 9.0 A/ms minimum at 125°C
MT1
MT2
G
CASE 221A-06
(TO-220AB)
Style 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Value
Unit
V
DRM
Peak Repetitive Off-State Voltage (1)
(–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
Volts
MAC15D
MAC15M
MAC15N
400
600
800
I
On-State RMS Current
15
A
A
T(RMS)
(60 Hz, T = 80°C)
C
I
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T = 125°C)
150
TSM
J
2
2
I t
Circuit Fusing Consideration (t = 8.3 ms)
93
20
A sec
P
Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)
Watts
Watts
°C
GM
C
P
Average Gate Power (t = 8.3 ms, T = 80°C)
0.5
G(AV)
C
T
J
Operating Junction Temperature Range
Storage Temperature Range
–40 to +125
–40 to +150
T
°C
stg
THERMAL CHARACTERISTICS
R
R
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
2.0
62.5
°C/W
°C
θJC
θJA
T
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
260
L
(1)
V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3–55
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I
Peak Repetitive Blocking Current
(V = Rated V , Gate Open)
mA
DRM
T
J
T
J
= 25°C
= 125°C
—
—
—
—
0.01
2.0
D
DRM
ON CHARACTERISTICS
V
Peak On-State Voltage*
(I = ±21 A Peak)
Volts
mA
TM
—
1.2
1.6
TM
Continuous Gate Trigger Current (V = 12 V, R = 100 Ω)
I
GT
D
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
5.0
5.0
5.0
13
16
18
35
35
35
I
Hold Current
mA
mA
H
(V = 12 V, Gate Open, Initiating Current = ±150 mA)
D
—
20
40
I
Latch Current (V = 24 V, I = 35 mA)
D G
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
—
—
—
33
36
33
50
80
50
V
GT
Gate Trigger Voltage (V = 12 V, R = 100 Ω)
Volts
D
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
DYNAMIC CHARACTERISTICS
(di/dt)
Rate of Change of Commutating Current* See Figure 10.
(V = 400 V, I = 6.0 A, Commutating dv/dt = 24 V/µs,
9.0
—
—
—
—
A/ms
c
C = 10 µF
L
L
D
TM
Gate Open, T = 125°C, f = 250 Hz, No Snubber)
L
= 40 mH
J
dv/dt
Critical Rate of Rise of Off-State Voltage
250
V/µs
(V = Rated V
, Exponential Waveform, Gate Open, T = 125°C)
D
DRM
J
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
125
120
115
20
18
16
14
DC
180
°
120
°
90°
α
= 30 and 60
°
110
105
100
95
60°
α
= 90°
12
10
8
α
= 180
°
α = 120°
α
= 30°
6
DC
90
4
85
2
80
0
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
, RMS ON-STATE CURRENT (AMP)
I
, ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
3–56
Motorola Thyristor Device Data
100
10
1
1
TYPICAL AT
= 25
MAXIMUM @ T = 125°C
J
T
°C
J
0.1
0.01
4
1·10
0.1
1
10
100
t, TIME (ms)
1000
Figure 4. Thermal Response
MAXIMUM @ T = 25°C
40
J
MT2 POSITIVE
MT2 NEGATIVE
0.1
5
–40
0
0.5
1
1.5
2
2.5
3
3.5
4
–10
20
50
80
C)
110 125
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
T , JUNCTION TEMPERATURE (
°
J
Figure 3. On-State Characteristics
Figure 5. Hold Current Variation
100
1
OFF-STATE VOLTAGE = 12 V
= 140
R
Ω
L
Q2
Q3
Q1
Q1
Q3
Q2
OFF-STATE VOLTAGE = 12 V
R
= 140 Ω
L
1
0.5
–40
–40
–10
20
50
80
C)
110 125
–10
+20
50
80
C)
110 125
T , JUNCTION TEMPERATURE (
°
T , JUNCTION TEMPERATURE (
°
J
J
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
3–57
Motorola Thyristor Device Data
5000
4K
3K
2K
1K
0
100
V
T
= 800 Vpk
= 125°C
D
J
T
= 125
°
C
100°
C
75°C
J
10
I
TM
1
f =
t
2 t
w
w
6f I
TM
(di/dt)
=
c
1000
V
DRM
1
10
100
1000
10000
10
20
30
40
50
60
70
80
90
100
R
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
G
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
–
TRIGGER
400 V
+
CHARGE
2
1N914
51
G
NON-POLAR
1
C
L
Note: Component values are for verification of rated (dv/dt) . See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
3–58
Motorola Thyristor Device Data
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