MAC212-10-AS [MOTOROLA]
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| 型号： | MAC212-10-AS |
| 厂家： | 
MOTOROLA |
| 描述： | 暂无描述 可控硅 三端双向交流开关 |
| 文件： | 总4页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
12 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
MT1
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes
(MAC212A Series)
MT2
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Repetitive Peak Off-State Voltage (T = –40 to +125°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4, MAC212A4
200
400
600
800
MAC212-6, MAC212A6
MAC212-8, MAC212A8
MAC212-10, MAC212A10
On-State Current RMS (T = +85°C)
Full Cycle Sine Wave 50 to 60 Hz
I
12
Amp
Amp
C
T(RMS)
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, T = +85°C)
preceded and followed by Rated Current
I
100
C
TSM
2
2
Circuit Fusing Considerations (t = 8.3 ms)
I t
40
20
A s
Peak Gate Power (T = +85°C, Pulse Width = 10 µs)
P
Watts
Watt
Amp
°C
C
GM
Average Gate Power (T = +85°C, t = 8.3 ms)
P
0.35
C
G(AV)
Peak Gate Current (T = +85°C, Pulse Width = 10 µs)
I
2
C
GM
Operating Junction Temperature Range
Storage Temperature Range
T
J
–40 to +125
–40 to +150
T
°C
stg
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
3–83
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
2.1
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction)
I
DRM
(V = Rated V , Gate Open)
DRM
T
J
T
J
= 25°C
= +125°C
—
—
—
—
10
2
µA
mA
D
Peak On-State Voltage (Either Direction)
= 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
V
—
1.3
1.75
Volts
mA
TM
I
2%
TM
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
L
I
GT
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
—
—
12
12
20
35
50
50
50
75
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
V
GT
Volts
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
—
—
0.9
0.9
1.1
1.4
2
2
2
2.5
(Main Terminal Voltage = Rated V
, R = 10 kΩ, T = +125°C)
L J
DRM
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
0.2
0.2
—
—
—
—
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
I
—
—
—
—
6
1.5
5
50
—
—
—
mA
µs
H
Turn-On Time
t
gt
(V = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
, I
= 17 A, I = 120 mA,
GT
D
DRM TM
Critical Rate of Rise of Commutation Voltage
dv/dt
V/µs
V/µs
(c)
(V = Rated V
Gate Unenergized, T = +85°C)
, I = 17 A, Commutating di/dt = 6.1 A/ms,
D
DRM TM
C
Critical Rate of Rise of Off-State Voltage
dv/dt
100
(V = Rated V
, Exponential Voltage Rise, Gate Open,
DRM
D
T
C
= +85°C)
FIGURE 1 — CURRENT DERATING
FIGURE 2 — POWER DISSIPATION
28
24
20
16
12
8.0
4.0
0
125
115
105
95
α
dc
α
α
= 30
°
°
α
= 180°
α
= CONDUCTION ANGLE
90
60
30
°
°
°
60
90
α
°
180
°
α
85
dc
α
= CONDUCTION ANGLE
75
0
2.0
4.0
6.0
8.0
10
12
14
0
2.0
4.0
6.0
8.0
10
12
14
I
, RMS ON-STATE CURRENT (AMP)
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
3–84
Motorola Thyristor Device Data
FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS
FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT
100
100
50
20
80
60
10
CYCLE
40
20
0
5.0
T
= 70°C
C
T
T
= 25°C
J
J
f = 60 Hz
2.0
= 125°C
Surge is preceded and followed by rated current
1.0
0.5
1.0
2.0
3.0
5.0
7.0
10
NUMBER OF CYCLES
0.2
0.1
FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
2.0
1.6
1.2
0.8
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
0.4
0
–60
–40
–20
0
20
40
C)
60
80
T
, CASE TEMPERATURE (
°
C
FIGURE 6 — TYPICAL GATE TRIGGER CURRENT
FIGURE 7 — TYPICAL HOLDING CURRENT
2.8
2.0
1.6
1.2
2.4
2.0
1.6
1.2
0.8
0.4
0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
0.8
0.4
0
–60
–40
–20
0
20
40
C)
60
80
–60
–40
–20
T
0
20
40
C)
60
80
T
, CASE TEMPERATURE (
°
, CASE TEMPERATURE (
°
C
C
3–85
Motorola Thyristor Device Data
FIGURE 8 – THERMAL RESPONSE
1.0
0.5
0.2
0.1
Z
= r(t) • R
θJC
θ
JC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
t, TIME (ms)
3–86
Motorola Thyristor Device Data
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