MAC212-10FP [MOTOROLA]
ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS; 隔离双向可控硅晶闸管12安培RMS 200通800伏
| 型号： | MAC212-10FP |
| 厂家： | 
MOTOROLA |
| 描述： | ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS |
| 文件： | 总6页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MAC212FP/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
ISOLATED TRIACs
THYRISTORS
12 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or
Four Modes (MAC212AFP Series)
MT2
MT1
CASE 221C-02
STYLE 3
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Repetitive Peak Off-State Voltage (T = –40 to +125°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4FP,MAC212A4FP
MAC212-6FP,MAC212A6FP
MAC212-8FP,MAC212A8FP
MAC212-10FP, MAC212A10FP
200
400
600
800
(2)
On-State RMS Current (T = +85°C) Full Cycle Sine Wave 50 to 60 Hz
I
12
Amps
Amps
C
T(RMS)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +85°C)
I
100
C
TSM
preceded and followed by rated current
2
2
Circuit Fusing (t = 8.3 ms)
I t
40
20
A s
Peak Gate Power (T = +85°C, Pulse Width = 10 µs)
P
Watts
Watt
Amps
Volts
°C
C
GM
Average Gate Power (T = +85°C, t = 8.3 ms)
P
0.35
C
G(AV)
Peak Gate Current (T = +85°C, Pulse Width = 10 µs)
I
2
C
GM
RMS Isolation Voltage (T = 25°C, Relative Humidity
20%)
V
1500
A
(ISO)
Operating Junction Temperature
Storage Temperature Range
T
J
–40 to +125
–40 to +150
T
°C
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
2.1
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
R
θJC
R
2.2 (typ)
60
θCS
R
θJA
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. ThecasetemperaturereferencepointforallT measurementsisapointonthecenterleadofthepackageas closeaspossibletotheplastic
C
body.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction)
I
DRM
(V = Rated V , Gate Open)
DRM
T
J
T
J
= 25°C
= +125°C
—
—
—
—
10
2
µA
mA
D
Peak On-State Voltage (Either Direction)
(I = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
V
—
1.3
1.75
Volts
mA
TM
2%)
TM
Gate Trigger Current (Continuous dc)
I
GT
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms,
L
Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
—
—
12
12
20
35
50
50
50
75
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms,
V
GT
Volts
L
Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
—
—
0.9
0.9
1.1
1.4
2
2
2
2.5
(Main Terminal Voltage = Rated V
, R = 10 kΩ, T = +125°C)
L J
DRM
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A ” SUFFIX ONLY
0.2
0.2
—
—
—
—
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
I
—
—
—
—
6
1.5
5
50
—
—
—
mA
µs
H
Turn-On Time
t
gt
(V = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
, I
= 17 A, I = 120 mA,
GT
D
DRM TM
Critical Rate of Rise of Commutation Voltage
dv/dt
V/µs
V/µs
(c)
(V = Rated V
Gate Unenergized, T = +85°C)
, I = 17 A, Commutating di/dt = 6.1 A/ms,
D
DRM TM
C
Critical Rate of Rise of Off-State Voltage
dv/dt
100
(V = Rated V
, Exponential Voltage Rise, Gate Open,
DRM
D
T
C
= +85°C)
TYPICAL CHARACTERISTICS
28
24
20
125
115
105
95
α
α
dc
= 180
α
°
α
= 30°
α
= CONDUCTION ANGLE
16
12
8.0
4.0
0
90°
60°
30°
60°
α
90°
180
°
α
85
dc
α
= CONDUCTION ANGLE
75
0
2.0
4.0
6.0
8.0
10
12
14
0
2.0
4.0
6.0
8.0
10
12
14
I
, RMS ON-STATE CURRENT (AMP)
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. Current Derating
Figure 2. Power Dissipation
2
Motorola Thyristor Device Data
100
50
100
80
60
40
20
0
20
10
5
CYCLE
T
T
= 25°C
T
= 70°C
J
J
C
= 125°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
2
1
1
2
3
5
7
10
0.5
NUMBER OF CYCLES
Figure 4. Maximum Nonrepetitive Surge Current
0.2
0.1
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
4
4.4
2
v , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
Figure 3. Maximum On-State Characteristics
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
C)
60
80
T
, CASE TEMPERATURE (
°
C
Figure 5. Typical Gate Trigger Voltage
2.8
2
2.4
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
0.8
0.4
0
–60
–40
–20
0
20
40
C)
60
80
–60
–40
–20
T
0
20
40
C)
60
80
T
, CASE TEMPERATURE (
°
, CASE TEMPERATURE (
°
C
C
Figure 6. Typical Gate Trigger Current
Figure 7. Typical Holding Current
3
Motorola Thyristor Device Data
1
0.5
0.2
0.1
Z
= r(t) • R
θJC
θ
JC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
20
50
100
200
500
1 k
2 k
5 k
10 k
t, TIME (ms)
Figure 8. Thermal Response
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
–T–
PLANE
–B–
P
Y14.5M, 1982.
F
C
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
S
N
INCHES
MILLIMETERS
DIM
A
B
C
D
E
MIN
MAX
0.700
0.408
0.195
0.040
0.355
0.150
MIN
17.28
9.86
4.45
0.64
8.64
3.56
MAX
17.78
10.36
4.95
1.01
9.01
E
STYLE 3:
PIN 1. MT 1
0.680
0.388
0.175
0.025
0.340
0.140
A
K
2. MT 2
3. GATE
Q
H
1
2 3
F
3.81
–Y–
G
H
J
K
L
N
P
Q
R
S
0.100 BSC
2.54 BSC
0.110
0.018
0.500
0.045
0.049
0.270
0.480
0.090
0.105
0.070
0.155
0.028
0.550
0.070
–––
0.290
0.500
0.120
0.115
0.090
2.80
0.46
12.70
1.15
1.25
6.86
12.20
2.29
2.67
1.78
3.93
0.71
13.97
1.77
–––
7.36
12.70
3.04
2.92
2.28
Z
J
L
G
R
D 3 PL
Z
M
M
0.25 (0.010)
B
Y
CASE 221C-02
5
Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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