MAC218A10 [MOTOROLA]
TRIACs 8 AMPERES RMS 200 thru 800 VOLTS; 双向可控硅8安培RMS 200通800伏
| 型号： | MAC218A10 |
| 厂家： | 
MOTOROLA |
| 描述： | TRIACs 8 AMPERES RMS 200 thru 800 VOLTS |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MAC218/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
TRIACs
•
•
•
Blocking Voltage to 800 Volts
8 AMPERES RMS
200 thru 800 VOLTS
Glass Passivated Junctions for Greater Parameter Uniformity and Stability
TO-220 Construction Low Thermal Resistance, High Heat Dissipation and
Durability
•
Gate Triggering Guaranteed in Three Modes (MAC218 Series) or Four Modes
(MAC218A Series)
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage
V
DRM
Volts
(Gate Open, T = 25 to 125°C)
MAC218-4, MAC218A4
MAC218-6, MAC218A6
MAC218-8, MAC218A8
MAC218-10, MAC218A10
200
400
600
800
J
On-State Current RMS
(Conduction Angle = 360°, T = +80°C)
I
8
100
40
Amps
Amps
T(RMS)
C
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T = 80°C, preceded and followed by rated current)
I
TSM
C
2
I t
2
A s
Fusing Current
(t = 8.3 ms)
Peak Gate Power
(T = +80°C, Pulse Width = 2 µs)
C
P
16
Watts
Watt
GM
Average Gate Power
(T = +80°C, t = 8.3 ms)
C
P
0.35
4
G(AV)
Peak Gate Trigger Current
(Pulse Width = 1 µs)
I
Amps
GTM
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +125
–40 to +150
°C
°C
J
T
stg
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
2.2
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
I
DRM
(V = Rated V
, gate open)
T
T
= 25°C
= 125°C
—
—
—
—
10
2
µA
mA
D
DRM
J
J
Peak On-State Voltage (Either Direction)
(I = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
V
—
1.7
2
Volts
mA
TM
2%)
TM
Gate Trigger Current (Continuous dc)
I
GT
(V = 12 Vdc, R = 12Ω)
D
L
Trigger Mode
MT2(+), Gate(+); MT2(+), Gate(–); MT2(–), Gate(–)
MT2(–), Gate(+) “A” SUFFIX ONLY
—
—
—
—
50
75
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
V
GT
Volts
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
—
—
0.9
0.9
1.1
1.4
2
2
2
2.5
(Main Terminal Voltage = Rated V
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
, R = 10 kΩ, T = +125°C)
L J
DRM
0.2
0.2
—
—
—
—
Holding Current (Either Direction)
I
—
—
—
—
50
—
—
mA
V/µs
V/µs
H
(V = 24 Vdc, Gate Open,
D
Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off-State Voltage
dv/dt(c)
dv/dt
5
(V = Rated V
di/dt = 4.1 A/ms, Gate Unenergized, T = 80°C)
, I = 11.3 A, Commutating
D
DRM TM
C
Critical Rate of Rise of Off-State Voltage
100
(V = Rated V
, Exponential Voltage Rise, Gate Open,
DRM
D
T
J
= 125°C)
FIGURE 2 — POWER DISSIPATION
FIGURE 1 — CURRENT DERATING
10
8.0
6.0
4.0
125
115
105
95
2.0
0
85
75
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
RMS ON STATE CURRENT (AMPS)
I
, RMS ON STATE CURRENT (AMPS)
T(RMS)
T(RMS)
2
Motorola Thyristor Device Data
FIGURE 4 — NORMALIZED GATE TRIGGER VOLTAGE
FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT
1.8
5.0
OFF-STATE VOLTAGE = 12 V
OFF-STATE VOLTAGE = 12 V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
3.0
2.0
QUADRANT 4
1
2
QUADRANT
1
2
1.0
3
4
QUADRANTS
0.7
3
0.5
–60
–60 –40
–20
0
20
40
60
80
100
120
140
–40
–20
0
20
40
60
80
100
120
140
T , JUNCTION TEMPERATURE (
°C)
T , JUNCTION TEMPERATURE (
°C)
J
J
FIGURE 5 — NORMALIZED HOLDING CURRENT
2.0
GATE OPEN
MAIN TERMINAL #1
POSITIVE
1.0
0.7
0.5
MAIN TERMINAL #2
POSITIVE
0.3
0.2
–60
–40
–20
0
20
40
60
80
100
120
140
T , JUNCTION TEMPERATURE (
°C)
J
3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
PLANE
–T–
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
MIN
MILLIMETERS
4
3
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.055
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.39
5.33
3.04
2.79
1.39
6.47
1.27
–––
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
Q
Z
A
K
STYLE 4:
PIN 1. MAIN TERMINAL 1
1
2
U
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
H
R
L
V
J
G
T
U
V
D
N
Z
0.080
2.04
CASE 221A-04
(TO–220AB)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MAC218/D
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