MAC228A10-AK [MOTOROLA]
800V, 8A, TRIAC, TO-220AB;型号: | MAC228A10-AK |
厂家: | MOTOROLA |
描述: | 800V, 8A, TRIAC, TO-220AB 栅极 触发装置 可控硅 三端双向交流开关 局域网 |
文件: | 总4页 (文件大小:87K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by MAC228/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
•
Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking Current
Sources (MAC228 Series)
Four Mode Triggering for Drive Circuits that Source Current (MAC228A Series)
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
•
•
•
•
Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
Center Gate Geometry for Uniform Current Spreading
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage
V
DRM
Volts
(T = –40 to 110°C
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC228-4, MAC228A4
MAC228-6, MAC228A6
MAC228-8, MAC228A8
MAC228-10, MAC228A10
200
400
600
800
On-State RMS Current (T = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
I
8
Amps
Amps
C
T(RMS)
Peak Non-repetitive Surge Current
I
80
26
TSM
(One Full Cycle 60 Hz, T = 110°C)
J
2
I t
2
A s
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t
Peak Gate Voltage (t
Peak Gate Power (t
2 µs)
2 µs)
2 µs)
I
±2
±10
20
Amps
Volts
GM
V
P
GM
Watts
GM
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current
(continued)
DRM
source such that the voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
MAXIMUM RATINGS — continued
Rating
Symbol
Value
0.5
Unit
Watts
°C
Average Gate Power (T = 80°C, t
8.3 ms)
P
G(AV)
C
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
T
J
–40 to 110
–40 to 150
8
T
stg
°C
in. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
2.2
60
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θJC
θJA
R
ELECTRICAL CHARACTERISTICS (T = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(V = Rated V
I
DRM
)
T
J
T
J
= 25°C
= 110°C
—
—
—
—
10
2
µA
mA
D
DRM
Peak On-State Voltage
(I = 11 A Peak, Pulse Width
V
—
—
1.8
Volts
mA
TM
2 ms, Duty Cycle
2%)
TM
Gate Trigger Current (Continuous dc)
(V = 12 V, R = 100 Ω)
I
GT
D
L
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
—
—
—
—
5
10
Gate Trigger Voltage (Continuous dc)
V
GT
Volts
(V = 12 V, R = 100 Ω)
D
L
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
—
—
—
—
2
2.5
(V = Rated V
, T = 110°C, R = 10 k)
D
DRM
C L
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
0.2
0.2
—
—
—
—
Holding Current
(V = 12 Vdc, I
D
I
—
—
—
—
—
1.5
25
5
15
—
—
—
mA
µs
H
= 200 mA, Gate Open)
TM
Gate-Controlled Turn-On Time
(V = Rated V , I = 16 A Peak, I = 30 mA)
t
gt
D
DRM TM
Critical Rate of Rise of Off-State Voltage
(V = Rated V , Exponential Waveform, T = 110°C)
G
dv/dt
V/µs
V/µs
D
DRM
Critical Rate of Rise of Commutation Voltage
(V = Rated V , I = 11.3 A,
C
dv/dt(c)
D
DRM TM
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T = 80°C)
C
FIGURE 1 – RMS CURRENT DERATING
FIGURE 2 – ON-STATE POWER DISSIPATION
110
10
dc
α
= 30°
α
= 180°
α
8.0
104
98
60°
120
°
α
90°
90°
120
°
1
6.0
4.0
α
= CONDUCTION ANGLE
180
°
60°
T
≈
110
°C
30°
J
92
α
α
86
80
2.0
0
α
= CONDUCTION ANGLE
dc
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
, RMS ON-STATE CURRENT (AMP)
I , RMS ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
2
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
MIN
MILLIMETERS
4
3
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.055
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.39
5.33
3.04
2.79
1.39
6.47
1.27
–––
Q
A
K
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
STYLE 4:
PIN 1. MAIN TERMINAL 1
H
U
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
Z
L
V
R
G
J
T
U
V
D
N
Z
0.080
2.04
CASE 221A-04
(TO–220AB)
3
Motorola Thyristor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MAC228/D
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