MAC321-10-AK [MOTOROLA]
800V, 20A, TRIAC, TO-220AB;
| 型号： | MAC321-10-AK |
| 厂家： | 
MOTOROLA |
| 描述： | 800V, 20A, TRIAC, TO-220AB 可控硅 三端双向交流开关 |
| 文件： | 总6页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MAC321/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed for full-wave ac control applications primarily in industrial environments
needing noise immunity.
•
Guaranteed High Commutation Voltage
dv/dt — 500 V/µs Min @ T = 25°C
TRIACs
20 AMPERES RMS
200 thru 800 VOLTS
C
•
•
High Blocking Voltage — V
to 800 V
DRM
Photo Glass Passivated Junction for Improved Power Cycling Capability and
Reliability
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
C
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage (T = –40 to +125°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Open Gate)
MAC321-4
MAC321-6
MAC321-8
MAC321-10
200
400
600
800
Peak Gate Voltage
V
10
20
Volts
Amp
GM
I
T(RMS)
On-State Current RMS (T = +75°C
Full Cycle Sine Wave 50 to 60 Hz)
C
Peak Surge Current (One Full Cycle, 60 Hz, T = +75°C
preceded and followed by Rated Current)
I
150
Amp
C
TSM
2
2
Circuit Fusing Considerations (t = 8.3 ms)
I t
93
20
A s
Peak Gate Power (T = +75°C, Pulse Width = 2.0 µs)
P
Watts
Watt
Amp
°C
C
GM
Average Gate Power (T = +75°C, t = 8.3 ms)
P
0.5
C
G(AV)
Peak Gate Current
I
2.0
GM
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
T
J
–40 to +125
–40 to +150
T
°C
stg
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
1.8
°C/W
θJC
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
I
DRM
(V = Rated V , Gate Open)
DRM
D
T
J
T
J
= 25°C
= +125°C
—
—
—
—
10
2.0
µA
mA
Peak On-State Voltage (Either Direction)
(I = 28 A Peak; Pulse Width 2.0 ms, Duty Cycle
V
—
1.4
1.7
Volts
mA
TM
2.0%)
TM
Gate Trigger Current (Continuous dc)
I
GT
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
—
—
—
—
—
—
100
100
100
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
V
GT
Volts
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
—
—
—
—
—
—
2.0
2.0
2.0
(Main Terminal Voltage = Rated V
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
, R = 10 kΩ, T = +125°C)
DRM
L
J
0.2
—
—
—
—
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
I
100
mA
µs
H
Turn-On Time
t
—
1.5
—
gt
(V = Rated V
Rise Time = 0.1 µs, Pulse Width = 2.0 µs)
, I
= 28 A, I = 120 mA,
GT
D
DRM TM
Critical Rate of Rise of Off-State Voltage
dv/dt(s)
V/µs
(V = Rated V
, Exponential Voltage Rise, Gate Open)
D
DRM
T
J
T
J
= 25°C
= +125°C
500
200
—
—
—
—
TYPICAL CHARACTERISTICS
130
40
35
α
120
110
100
90
α
= 30
°
dc
α
60
°
30
25
20
15
10
5
180°
90
°
90°
α
= CONDUCTION
ANGLE
80
α
180
°
60°
70
dc
18
α
α
= 30°
60
α
= CONDUCTION
ANGLE
50
0
0
2
4
6
8
10
12
14
16
20
0
2
4
I
6
8
10
12
14
16
18
20
I
, RMS ON-STATE CURRENT (AMP)
, RMS ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
2
Motorola Thyristor Device Data
3
2
100
70
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
50
T
= 25°C
J
125°C
30
20
1
0.7
0.5
10
7
5
0.3
–60
–40
–20
0
20
40
60
80
100
120 140
T , JUNCTION TEMPERATURE (
°
C)
J
3
2
Figure 3. Typical Gate Trigger Voltage
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1
0.7
0.5
1
0.7
0.5
0.3
0.2
0.1
0.3
0.4
0.8
v
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
–60 –40
–20
0
20
40
60
80
C)
100
120 140
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE(
°
TM
J
Figure 4. Typical Gate Trigger Current
Figure 5. Maximum On-State Characteristics
300
200
3
GATE OPEN
APPLIES TO EITHER DIRECTION
2
1
100
70
0.7
0.5
50
T
= 80°C
C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
30
0.3
–60
1
2
3
5
7
10
–40
–20
0
20
40
60
80
100
120
140
NUMBER OF CYCLES
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Maximum On-Repetitive Surge Current
Figure 6. Typical Holding Current
3
Motorola Thyristor Device Data
1
0.5
0.2
0.1
Z
= r(t) • R
θJC
θ
JC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1 k
2 k
5 k
10 k
t, TIME (ms)
Figure 8. Thermal Response
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.055
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.39
5.33
3.04
2.79
1.39
6.47
1.27
–––
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
4
3
STYLE 4:
PIN 1. MAIN TERMINAL 1
Q
A
K
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
1
2
U
H
Z
R
L
V
J
T
U
V
G
Z
0.080
2.04
D
N
CASE 221A-04
(TO–220AB)
5
Motorola Thyristor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MAC321/D
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