MAC8D-AN [MOTOROLA]

TRIAC, 400V V(DRM), 8A I(T)RMS, TO-220AB,;


型号：	MAC8D-AN
厂家：	MOTOROLA
描述：	TRIAC, 400V V(DRM), 8A I(T)RMS, TO-220AB, 可控硅三端双向交流开关
文件：	总4页 (文件大小：83K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

TRIACS

8 AMPERES RMS

400 thru 800

VOLTS

Designed for high performance full-wave ac control applications where high

noise immunity and high commutating di/dt are required.

•

Blocking Voltage to 800 Volts

On-State Current Rating of 8.0 Amperes RMS at 100°C

Uniform Gate Trigger Currents in Three Modes

High Immunity to dv/dt — 250 V/µs minimum at 125°C

Minimizes Snubber Networks for Protection

Industry Standard TO-220AB Package

MT2

High Commutating di/dt — 6.5 A/ms minimum at 125°C

MT1

MT2

CASE 221A-06

(TO-220AB)

Style 4

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

DRM

Peak Repetitive Off-State Voltage (1)

(–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)

Volts

MAC8D

MAC8M

MAC8N

400

600

800

On-State RMS Current

8.0

T(RMS)

(60 Hz, T = 100°C)

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, T = 125°C)

TSM

I t

Circuit Fusing Consideration (t = 8.3 ms)

A sec

Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)

Watts

°C

Average Gate Power (t = 8.3 ms, T = 80°C)

0.35

G(AV)

Operating Junction Temperature Range

Storage Temperature Range

–40 to +125

–40 to +150

°C

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.2

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

260

(1)

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

3–45

Motorola Thyristor Device Data

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(V = Rated V , Gate Open)

DRM

= 25°C

= 125°C

—

0.01

2.0

DRM

ON CHARACTERISTICS

Peak On-State Voltage*

(I = ±11 A Peak)

Volts

—

1.2

1.6

Continuous Gate Trigger Current (V = 12 V, R = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

5.0

Hold Current

(V = 12 V, Gate Open, Initiating Current = ±150 mA)

—

Latch Current (V = 24 V, I = 35 mA)

D G

MT2(+), G(+); MT2(–), G(–)

MT2(+), G(–)

—

Gate Trigger Voltage (V = 12 V, R = 100 Ω)

Volts

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

0.5

0.69

0.77

0.72

1.5

DYNAMIC CHARACTERISTICS

(di/dt)

Rate of Change of Commutating Current* See Figure 10.

(V = 400 V, I = 4.4 A, Commutating dv/dt = 18 V/µs,

6.5

—

A/ms

C = 10 µF

Gate Open, T = 125°C, f = 250 Hz, No Snubber)

= 40 mH

dv/dt

Critical Rate of Rise of Off-State Voltage

250

V/µs

(V = Rated V

, Exponential Waveform, Gate Open, T = 125°C)

DRM

*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

125

120

180°

= 120, 90, 60, 30°

120°

115

= 180°

110

105

100

60°

90°

= 30°

, RMS ON-STATE CURRENT (AMP)

, ON-STATE CURRENT (AMP)

T(RMS)

Figure 1. RMS Current Derating

Figure 2. On-State Power Dissipation

3–46

Motorola Thyristor Device Data

100

TYPICAL AT

= 25

°C

MAXIMUM @ T = 125°C

0.1

0.01

1·10

0.1

100

t, TIME (ms)

1000

Figure 4. Thermal Response

MAXIMUM @ T = 25°C

MT2 POSITIVE

MT2 NEGATIVE

0.1

0.5

1.5

2.5

3.5

4.5

–50

–30

–10

110

130

V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

T , JUNCTION TEMPERATURE (

°C)

Figure 3. On-State Characteristics

Figure 5. Hold Current Variation

100

0.95

0.9

0.85

0.8

075

0.7

0.65

0.6

0.55

0.5

0.45

0.4

–50

–30

–10

110

130

–50

–30

– 10

110

130

T , JUNCTION TEMPERATURE (

°C)

T , JUNCTION TEMPERATURE (°C)

Figure 7. Gate Trigger Voltage Variation

Figure 6. Gate Trigger Current Variation

3–47

Motorola Thyristor Device Data

5000

4.5K

100

3.5K

MT2 NEGATIVE

= 125°C

100°C

75°C

2.5K

1.5K

f =

2 t

500

6f I

MT2 POSITIVE

(di/dt)

1000

DRM

100

1000

, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential)

Figure 9. Critical Rate of Rise of

Commutating Voltage

1N4007

200 V

RMS

ADJUST FOR

, 60 Hz V

MEASURE

CHARGE

CONTROL

–

TRIGGER

400 V

CHARGE

1N914

NON-POLAR

Note: Component values are for verification of rated (dv/dt) . See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

3–48

Motorola Thyristor Device Data

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