MAC8SN [MOTOROLA]
TRIACS 8 AMPERES RMS 400 THRU 800 VOLTS; 双向可控硅8安培RMS 400通800伏
| 型号： | MAC8SN |
| 厂家： | 
MOTOROLA |
| 描述： | TRIACS 8 AMPERES RMS 400 THRU 800 VOLTS |
| 文件： | 总8页 (文件大小：756K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MAC8S/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
TRIACS
Designed for industrial and consumer applications for full wave control of ac
loads such as appliance controls, heater controls, motor controls, and other
power switching applications.
8 AMPERES RMS
400 THRU 800
VOLTS
•
Sensitive Gate Allows Triggering by Microcontrollers and other Logic
Circuits
•
•
•
High Immunity to dv/dt — 25 V/ s Minimum at 110 C
High Commutating di/dt — 8.0 A/ms Minimum at 110 C
MT2
Minimum and Maximum Values of I , V
GT GT
and I Specified for ease of
H
Design
•
•
•
•
On-State Current Rating of 8 Amperes RMS at 70 C
High Surge Current Capability — 70 Amperes
Blocking Voltage to 800 Volts
MT1
MT2
Rugged, Economical TO220AB Package
G
CASE 221A–06
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
(T = –40 to 110°C, Sine Wave, 50 to 60Hz, Gate Open)
J
V
DRM
Volts
MAC8SD
MAC8SM
MAC8SN
400
600
800
On-State RMS Current
(Full Cycle Sine Wave, 60Hz, T = 70°C)
I
8
A
A
T(RMS)
J
Peak Non-repetitive Surge Current
(One Half Cycle, 60Hz, T = 110°C)
I
TSM
70
J
2
I t
2
Circuit Fusing Consideration
(t = 8.3 ms)
20
A sec
Peak Gate Power
(Pulse Width ≤ 1.0µs, T = 70°C)
P
16
Watts
Watts
GM
C
Average Gate Power
P
0.35
G(AV)
(t = 8.3ms, T = 70°C)
C
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +110
–40 to +150
°C
°C
J
T
stg
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
°C/W
°C
R
R
2.2
62.5
θJC
θJA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
(1) V
T
260
L
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
REV 0
Motorola, Inc.1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
mA
DRM
(V = Rated V , Gate Open)
DRM
T
J
T
J
= 25°C
= 110°C
—
—
—
—
0.01
2.0
D
ON CHARACTERISTICS
Peak On-State Voltage* (I
=
11A)
V
—
—
1.85
Volts
mA
TM
TM
Continuous Gate Trigger Current (V = 12 V, R = 100Ω)
I
D
L
GT
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
.8
.8
.8
2.0
3.0
3.0
5.0
5.0
5.0
Hold Current (V = 12V, Gate Open, Initiating Current = 150mA)
I
1.0
3.0
10
mA
mA
D
H
Latching Current (V = 24V, I = 5mA)
I
D
G
L
MT2(+), G(+)
MT2(–), G(–)
MT2(+), G(–)
2.0
2.0
2.0
5.0
10
5.0
15
20
15
Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100Ω)
V
GT
Volts
D
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(V = 400V, I = 3.5A, Commutating dv/dt = 10V /sec,
(dv/dt)c
dv/dt
8.0
25
10
75
—
—
A/ms
V/ s
D
TM
Gate Open, T = 110 C, f= 500 Hz, Snubber: C = 0.01 F, R = 15 ,
J
S
S
see Figure 16.)
Critical Rate of Rise of Off-State Voltage
(V = Rate V
, Exponential Waveform, R = 510 , T = 110°C)
D
DRM
GK J
* Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
110
100
25
20
DC
180
°
°
α
120
= 30 and 60
°
α
90°
90
80
70
60
15
10
5
= CONDUCTION ANGLE
60°
α
α
90°
= CONDUCTION ANGLE
= 30
°
180
DC
12
°
0
0
2
I
4
6
8
10
0
2
4
6
8
10
12
I
, RMS ON–STATE CURRENT (AMPS)
, RMS ON–STATE CURRENT (AMPS)
T(RMS)
T(RMS)
Figure 2.0 Maximum On–State Power Dissipation
Figure 1.0 RMS Current Derating
Data Sheets
2
Motorola Thyristor Device Data
1
100
10
1
Typical @ T = 25 °C
J
Maximum @
T
= 110°C
J
Z
= R
r(t)
JC(t)
JC(t)
0.1
Maximum @
T
= 25
°C
J
0.1
0.01
2.5
3
3.5
4.5
0.1
1
10
100
1000
1 104
0.5
1
1.5
2
4
5
5.5
6
t, TIME (ms)
V , INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
T
Figure 4.0 Transient Thermal Response
Figure 3.0 On–State Characteristics
25
20
15
10
8
6
MT2 NEGATIVE
4
2
0
10
5
Q3
MT2 POSITIVE
Q1
0
–40 –25
–10
5
20
35
50
65
C)
80
95
110
–40
–25
–10
5
20
35
50
65
C)
80
95
110
T , JUNCTION TEMPERATURE (
°
J
T
JUNCTION TEMPERATURE (
°
J,
Figure 6.0 Typical Latching Current Versus
Junction Temperature
Figure 5.0 Typical Holding Current Versus
Junction Temperature
14
12
10
8
1
Q1
0.9
Q3
0.8
0.7
0.6
0.5
Q3
Q3
6
Q2
4
Q2
2
0.4
0.3
Q1
Q1
0
–40
–25
–10
5
20
35
50
65
C)
80
95
110
–40
–25 –10
5
20
35
50
65
C)
80
95
110
T , JUNCTION TEMPERATURE (
°
T , JUNCTION TEMPERATURE (
°
J
J
Figure 7.0 Typical Gate Trigger Current Versus
Junction Temperature
Figure 8.0 Typical Gate Trigger Voltage Versus
Junction Temperature
Motorola Thyristor Device Data
3
Data Sheets
200
130
120
110
100
R
– MT1 = 510
T
= 110°C
G
J
180
160
T
= 100°C
J
V
= 400V
PK
140
600V
800V
110°C
120
100
90
80
120
°C
80
60
400
450
500
550
600
650
700
750
800
100
200
300
400
500
600
700
800
900
1000
V
, Peak Voltage (Volts)
RGK, GATE–MT1 RESISTANCE (OHMS)
PK
Figure 10.0 Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(+)
Figure 9.0 Typical Exponential Static dv/dt Versus
Gate–MT1 Resistance, MT2(+)
130
120
350
300
V
= 400V
PK
T
= 100°C
110
100
90
J
250
200
150
100
600V
110°C
120°C
R
– MT1 = 510
105
G
R
– MT1 = 510
G
80
800V
115
70
100
110
120
125
400
450
500
550
600
650
700
750
800
T , Junction Temperature (°C)
V
, Peak Voltage (Volts)
J
PK
Figure 11.0 Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+)
Figure 12.0 Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(–)
350
300
300
250
V
= 400V
PK
V
= 400V
PK
250
200
600V
600V
800V
200
150
100
800V
150
100
50
R
– MT1 = 510
105
T = 110°C
J
G
100
110
115
120
125
100
200
300
400
500
600
700
800
900
1000
T , Junction Temperature (
°C)
RGK, GATE–MT1 RESISTANCE (OHMS)
J
Figure 13.0 Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(–)
Figure 14.0 Typical Exponential Static dv/dt Versus
Gate–MT1 Resistance, MT2(–)
Data Sheets
4
Motorola Thyristor Device Data
100
10
1
V
= 400V
PK
90°C
100°C
1
f =
2 t
w
t
w
6f I
TM
110°C
(di/dt)
=
c
1000
V
DRM
1
5
10
15
20
25
30
(di/dt) , CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
Figure 15.0 Critical Rate of Rise of
Commutating Voltage
1N4007
20 mHY
L
400 V
RMS
L
ADJUST FOR
, 60 Hz V
MEASURE
I
R
S
15
S
I
TM
AC
CHARGE
CONTROL
–
+
TRIGGER
400 V
CHARGE
0.01
ADJUST FOR
dv/dt
F
C
2
(c)
1N914
51
5
F
1
NON-POLAR
G
C
L
Note: Component values are for verification of rated (dv/dt) . See AN1048 for additional information.
c
Figure 16.0 Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
Motorola Thyristor Device Data
5
Data Sheets
NOTES
Data Sheets
6
Motorola Thyristor Device Data
NOTES
Motorola Thyristor Device Data
7
Data Sheets
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
L
R
V
J
G
T
U
V
D
CASE 221A–06
(TO-220AB)
N
Z
0.080
2.04
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MAC8S/D
◊
相关型号：
MAC8SNG
4 Quadrant Logic Level TRIAC, 800V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN
LITTELFUSE
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