MAC9D-BU [MOTOROLA]
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| 型号： | MAC9D-BU |
| 厂家： | 
MOTOROLA |
| 描述： | 暂无描述 可控硅 三端双向交流开关 |
| 文件： | 总4页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
TRIACS
8.0 AMPERES RMS
400 thru 800
VOLTS
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 8.0 Amperes RMS at 100°C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt — 500 V/µs minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
MT2
High Commutating di/dt — 6.5 A/ms minimum at 125°C
MT1
MT2
G
CASE 221A-06
(TO-220AB)
Style 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Value
Unit
V
DRM
Peak Repetitive Off-State Voltage (1)
(–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
Volts
MAC9D
MAC9M
MAC9N
400
600
800
I
On-State RMS Current
8.0
A
A
T(RMS)
(60 Hz, T = 100°C)
C
I
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T = 125°C)
80
TSM
J
2
2
I t
Circuit Fusing Consideration (t = 8.3 ms)
26
16
A sec
P
Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)
Watts
Watts
°C
GM
C
P
Average Gate Power (t = 8.3 ms, T = 80°C)
0.35
G(AV)
C
T
J
Operating Junction Temperature Range
Storage Temperature Range
–40 to +125
–40 to +150
T
°C
stg
THERMAL CHARACTERISTICS
R
R
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
2.2
62.5
°C/W
°C
θJC
θJA
T
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
260
L
(1)
V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
3–49
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I
Peak Repetitive Blocking Current
(V = Rated V , Gate Open)
mA
DRM
T
J
T
J
= 25°C
= 125°C
—
—
—
—
0.01
2.0
D
DRM
ON CHARACTERISTICS
V
Peak On-State Voltage*
(I = ±11 A Peak)
Volts
mA
TM
—
1.2
1.6
TM
Continuous Gate Trigger Current (V = 12 V, R = 100 Ω)
I
GT
D
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
10
10
10
16
18
22
50
50
50
I
Hold Current
mA
mA
H
(V = 12 V, Gate Open, Initiating Current = ±150 mA)
D
—
30
50
I
Latch Current (V = 24 V, I = 50 mA)
D G
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–)
L
—
—
20
30
50
80
V
GT
Gate Trigger Voltage (V = 12 V, R = 100 Ω)
Volts
D
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
DYNAMIC CHARACTERISTICS
(di/dt)
Rate of Change of Commutating Current* See Figure 10.
(V = 400 V, I = 4.4 A, Commutating dv/dt = 18 V/µs,
6.5
—
—
—
—
A/ms
c
C = 10 µF
L
L
D
TM
Gate Open, T = 125°C, f = 250 Hz, No Snubber)
L
= 40 mH
J
dv/dt
Critical Rate of Rise of Off-State Voltage
500
V/µs
(V = Rated V
, Exponential Waveform, Gate Open, T = 125°C)
D
DRM
J
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
125
12
10
8
DC
120
180°
α
= 120, 90, 60, 30°
120°
115
6
α
= 180°
110
105
100
60°
4
DC
5
90°
α
= 30°
2
0
0
1
2
3
4
6
7
8
0
1
2
3
4
5
6
7
8
I
, RMS ON-STATE CURRENT (AMP)
I
, ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
3–50
Motorola Thyristor Device Data
100
10
1
1
TYPICAL AT
= 25
T
°C
J
0.1
MAXIMUM @ T = 125°C
J
0.01
4
1·10
0.1
1
10
100
t, TIME (ms)
1000
Figure 4. Thermal Response
MAXIMUM @ T = 25°C
40
35
30
25
20
15
10
5
J
MT2 POSITIVE
MT2 NEGATIVE
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
–50
–30
–10
10
30
50
70
90
110
130
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
T , JUNCTION TEMPERATURE (
°C)
J
Figure 3. On-State Characteristics
Figure 5. Hold Current Variation
1
0.95
0.9
100
10
1
Q2
Q3
0.85
0.8
Q3
Q1
075
0.7
Q1
Q2
0.65
0.6
0.55
0.5
0.45
0.4
–50
–30
– 10
10
30
50
70
90
110
130
–50
–30
–10
10
30
50
70
90
110
130
T , JUNCTION TEMPERATURE (
°C)
T , JUNCTION TEMPERATURE (
°C)
J
J
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
3–51
Motorola Thyristor Device Data
5000
4.5K
4K
100
3.5K
3K
MT2 NEGATIVE
T
= 125°C
100°C
75°C
J
10
2.5K
2K
1.5K
1
f =
t
2 t
w
w
1K
500
0
6f I
TM
=
(di/dt)
c
MT2 POSITIVE
1000
V
DRM
1
1
10
100
1000
10
15
20
25
30
35
40
45
50
55
60
R
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
G
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
–
TRIGGER
400 V
+
CHARGE
2
1N914
51
NON-POLAR
1
G
C
L
Note: Component values are for verification of rated (dv/dt) . See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
3–52
Motorola Thyristor Device Data
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