MCR22-6RLRP [MOTOROLA]

Silicon Controlled Rectifier, 1.5A I(T)RMS, 1500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN;
MCR22-6RLRP
型号: MCR22-6RLRP
厂家: MOTOROLA    MOTOROLA
描述:

Silicon Controlled Rectifier, 1.5A I(T)RMS, 1500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN

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文件: 总7页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preferred Device  
Reverse Blocking Thyristors  
Designed and tested for repetitive peak operation required for CD  
ignition, fuel ignitors, flash circuits, motor controls and low-power  
switching applications.  
http://onsemi.com  
150 Amperes for 2 µs Safe Area  
High dv/dt  
Very Low Forward “On” Voltage at High Current  
Low-Cost TO-226AA (TO-92)  
SCRs  
1.5 AMPERES RMS  
400 thru 600 VOLTS  
Device Marking: Device Type, e.g., MCR22–6, Date Code  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
A
K
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(R  
= IK, T  
=
40 to +110°C,  
V
RRM  
GK  
J
Sine Wave, 50 to 60 Hz, Gate Open)  
MCR22–6  
MCR22–8  
400  
600  
On-State Current RMS  
(180° Conduction Angles, T = 80°C)  
I
1.5  
Amps  
Amps  
T(RMS)  
C
Peak Non-repetitive Surge Current,  
I
15  
1
TSM  
2
T
A
= 25°C  
3
(1/2 Cycle, Sine Wave, 60 Hz)  
Circuit Fusing Considerations (t = 8.3 ms)  
Forward Peak Gate Power  
2
2
I t  
0.9  
0.5  
A s  
TO–92 (TO–226AA)  
CASE 029  
P
Watt  
Watt  
Amp  
Volts  
°C  
GM  
STYLE 10  
(Pulse Width 1.0 sec, T = 25°C)  
A
Forward Average Gate Power  
P
0.1  
0.2  
5.0  
G(AV)  
PIN ASSIGNMENT  
Cathode  
(t = 8.3 msec, T = 25°C)  
A
1
2
3
Forward Peak Gate Current  
I
FGM  
Gate  
(Pulse Width 1.0 µs, T = 25°C)  
A
Anode  
Reverse Peak Gate Voltage  
V
RGM  
(Pulse Width 1.0 µs, T = 25°C)  
A
Operating Junction Temperature Range  
T
J
–40 to  
+110  
ORDERING INFORMATION  
@ Rated V  
RRM  
and V  
DRM  
Seedetailedorderingandshippinginformationinthepackage  
dimensions section on page 549 of this data sheet.  
Storage Temperature Range  
T
–40 to  
+150  
°C  
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
(1) V  
andV  
foralltypescanbeappliedonacontinuousbasis.Ratings  
RRM  
DRM  
apply for zero or negative gate voltage; however, positive gate voltage  
shall not be applied concurrent with negative potential on the anode.  
Blocking voltages shall not be tested with a constant current source such  
that the voltage ratings of the devices are exceeded.  
Semiconductor Components Industries, LLC, 2000  
543  
Publication Order Number:  
May, 2000 – Rev. 3  
MCR22–6/D  
MCR22–6, MCR22–8  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
50  
Unit  
°C/W  
°C/W  
°C  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Lead Solder Temperature  
R
R
θJC  
160  
+260  
θJA  
T
L
(Lead Length  
1/16from case, 10 s Max)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Peak Repetitive Forward or Reverse Blocking Current  
I
, I  
DRM RRM  
(V  
AK  
= Rated V  
DRM  
or V  
; R  
RRM GK  
= 1000 Ohms)  
T
T
= 25°C  
= 110°C  
10  
200  
µA  
µA  
C
C
ON CHARACTERISTICS  
(1)  
Peak Forward On–State Voltage  
V
1.2  
1.7  
Volts  
µA  
TM  
(I  
TM  
= 1 A Peak)  
(2)  
Gate Trigger Current (Continuous dc)  
(V = 6 Vdc, R = 100 Ohms)  
T
T
= 25°C  
= –40°C  
I
30  
200  
500  
C
C
GT  
AK  
Gate Trigger Voltage (Continuous dc)  
(V = 7 Vdc, R = 100 Ohms)  
L
(2)  
T
T
= 25°C  
= –40°C  
V
0.8  
1.2  
Volts  
Volts  
mA  
C
C
GT  
AK  
Gate Non–Trigger Voltage  
(V = 12 Vdc, R = 100 Ohms)  
L
(1)  
V
GD  
0.1  
T
= 110°C  
AK  
Holding Current  
(V = 12 Vdc, Gate Open)  
L
C
I
H
T
T
= 25°C  
= –40°C  
2.0  
5.0  
10  
AK  
C
C
Initiating Current = 200 mA  
DYNAMIC CHARACTERISTICS  
Critical Rate of Rise of Off–State Voltage  
dv/dt  
25  
V/µs  
(T = 110°C)  
C
(1) Pulse Width =1.0 ms, Duty Cycle 1%.  
(2) R  
Current not included in measurement.  
GK  
http://onsemi.com  
544  
MCR22–6, MCR22–8  
Voltage Current Characteristic of SCR  
+ Current  
Anode +  
V
TM  
Symbol  
Parameter  
V
Peak Repetitive Off State Forward Voltage  
Peak Forward Blocking Current  
Peak Repetitive Off State Reverse Voltage  
Peak Reverse Blocking Current  
Peak on State Voltage  
DRM  
DRM  
on state  
I
I
H
I
at V  
RRM  
RRM  
V
RRM  
I
RRM  
V
TM  
+ Voltage  
at V  
DRM DRM  
I
H
Holding Current  
I
Reverse Blocking Region  
(off state)  
Forward Blocking Region  
(off state)  
Reverse Avalanche Region  
Anode –  
CURRENT DERATING  
140  
100  
60  
140  
120  
100  
80  
dc  
α = 180°  
α = CONDUCTION  
ANGLE  
60  
dc  
40  
α = 180°  
20  
0
20  
0
α = CONDUCTION ANGLE  
0.2 0.4  
I , AVERAGE ON-STATE CURRENT (AMP)  
T(AV)  
0
0.2 0.4  
0.6 0.8  
1.0 1.2 1.4 1.6 1.8 2.0  
0
0.6  
0.8  
1.0  
I
, AVERAGE ON-STATE CURRENT (AMPS)  
T(AV)  
Figure 1. Maximum Case Temperature  
Figure 2. Maximum Ambient Temperature  
http://onsemi.com  
545  
MCR22–6, MCR22–8  
5.0  
3.0  
2.0  
T = 110°C  
J
25°C  
1.0  
0.7  
0.5  
0.3  
0.2  
0.1  
0.07  
0.05  
0.03  
0.02  
0.01  
0
0.5  
1.0  
1.5  
2.0  
2.5  
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)  
T
Figure 3. Typical Forward Voltage  
1.0  
0.7  
0.5  
0.3  
0.2  
0.1  
0.07  
0.05  
0.03  
0.02  
0.01  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1000  
2000  
5000 10000  
t, TIME (ms)  
Figure 4. Thermal Response  
http://onsemi.com  
546  
MCR22–6, MCR22–8  
TYPICAL CHARACTERISTICS  
0.8  
0.7  
0.6  
0.5  
100  
V
= 7.0 V  
AK  
50  
R = 100  
L
30  
20  
10  
5.0  
3.0  
2.0  
0.4  
0.3  
1.0  
–40  
–75  
–50  
–25  
0
25  
50  
75  
100 110  
–20  
0
20  
40  
60  
80  
100 110  
T , JUNCTION TEMPERATURE (°C)  
J
T JUNCTION TEMPERATURE (°C)  
J
Figure 5. Typical Gate Trigger Voltage  
Figure 6. Typical Gate Trigger Current  
2.0  
10  
1.8  
1.6  
1.4  
180°  
120  
°
90°  
60°  
V
= 12 V  
AK  
R = 100 Ω  
30°  
L
5.0  
2.0  
1.0  
1.2  
1.0  
dc  
0.8  
0.6  
0.4  
0.2  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
20  
T , JUNCTION TEMPERATURE (°C)  
–40  
–20  
0
40  
60  
80  
100 110  
I
, AVERAGE ON-STATE CURRENT (AMPS)  
T(AV)  
J
Figure 7. Typical Holding Current  
Figure 8. Power Dissipation  
http://onsemi.com  
547  
MCR22–6, MCR22–8  
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL  
H2A  
H2A  
H2B  
H2B  
H
W2  
H4  
H5  
T1  
L1  
H1  
W1  
W
L
T
T2  
F1  
F2  
D
P2  
P1  
P2  
P
Figure 9. Device Positioning on Tape  
Specification  
Millimeter  
Inches  
Symbol  
D
Item  
Min  
Max  
Min  
Max  
0.1496  
0.015  
0.0945  
.059  
0.1653  
3.8  
4.2  
Tape Feedhole Diameter  
D2  
F1, F2  
H
0.020  
0.110  
.156  
0.38  
2.4  
1.5  
8.5  
0
0.51  
2.8  
Component Lead Thickness Dimension  
Component Lead Pitch  
4.0  
Bottom of Component to Seating Plane  
Feedhole Location  
H1  
H2A  
H2B  
H4  
H5  
L
0.3346  
0
0.3741  
0.039  
0.051  
0.768  
0.649  
0.433  
9.5  
1.0  
Deflection Left or Right  
0
0
1.0  
Deflection Front or Rear  
0.7086  
0.610  
0.3346  
0.09842  
0.4921  
0.2342  
0.1397  
0.06  
18  
19.5  
16.5  
11  
Feedhole to Bottom of Component  
Feedhole to Seating Plane  
Defective Unit Clipped Dimension  
Lead Wire Enclosure  
15.5  
8.5  
2.5  
12.5  
5.95  
3.55  
0.15  
L1  
P
0.5079  
0.2658  
0.1556  
0.08  
12.9  
6.75  
3.95  
0.20  
1.44  
0.65  
19  
Feedhole Pitch  
P1  
Feedhole Center to Center Lead  
First Lead Spacing Dimension  
Adhesive Tape Thickness  
Overall Taped Package Thickness  
Carrier Strip Thickness  
P2  
T
T1  
0.0567  
0.027  
0.7481  
0.2841  
0.01968  
T2  
0.014  
0.6889  
0.2165  
.0059  
0.35  
17.5  
5.5  
.15  
W
Carrier Strip Width  
W1  
W2  
6.3  
Adhesive Tape Width  
0.5  
Adhesive Tape Position  
NOTES:  
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.  
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.  
3. Component lead to tape adhesion must meet the pull test requirements.  
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.  
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.  
6. No more than 1 consecutive missing component is permitted.  
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.  
8. Splices will not interfere with the sprocket feed holes.  
http://onsemi.com  
548  
MCR22–6, MCR22–8  
ORDERING & SHIPPING INFORMATION: MCR22 Series packaging options, Device Suffix  
Europe  
Equivalent  
U.S.  
Shipping  
Description of TO92 Tape Orientation  
MCR22–8RL1  
Radial Tape and Reel (2K/Reel)  
Bulk in Box (5K/Box)  
Flat side of TO92 and adhesive tape visible  
N/A, Bulk  
MCR22–6,8  
MCR22–6RLRA  
MCR22–6RLRP  
Radial Tape and Reel (2K/Reel)  
Radial Tape and Fan Fold Box (2K/Box)  
Radial Tape and Fan Fold Box (2K/Box)  
Round side of TO92 and adhesive tape visible  
Round side of TO92 and adhesive tape visible  
Flat side of TO92 and adhesive tape visible  
MCR22–8ZL1  
http://onsemi.com  
549  

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