MCR22-6RLRP [MOTOROLA]
Silicon Controlled Rectifier, 1.5A I(T)RMS, 1500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN;型号: | MCR22-6RLRP |
厂家: | MOTOROLA |
描述: | Silicon Controlled Rectifier, 1.5A I(T)RMS, 1500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN 栅 栅极 |
文件: | 总7页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preferred Device
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
http://onsemi.com
• 150 Amperes for 2 µs Safe Area
• High dv/dt
• Very Low Forward “On” Voltage at High Current
• Low-Cost TO-226AA (TO-92)
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
• Device Marking: Device Type, e.g., MCR22–6, Date Code
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
A
K
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage
V
Volts
DRM,
(R
= IK, T
=
40 to +110°C,
V
RRM
GK
J
Sine Wave, 50 to 60 Hz, Gate Open)
MCR22–6
MCR22–8
400
600
On-State Current RMS
(180° Conduction Angles, T = 80°C)
I
1.5
Amps
Amps
T(RMS)
C
Peak Non-repetitive Surge Current,
I
15
1
TSM
2
T
A
= 25°C
3
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
2
2
I t
0.9
0.5
A s
TO–92 (TO–226AA)
CASE 029
P
Watt
Watt
Amp
Volts
°C
GM
STYLE 10
(Pulse Width ≤ 1.0 sec, T = 25°C)
A
Forward Average Gate Power
P
0.1
0.2
5.0
G(AV)
PIN ASSIGNMENT
Cathode
(t = 8.3 msec, T = 25°C)
A
1
2
3
Forward Peak Gate Current
I
FGM
Gate
(Pulse Width ≤ 1.0 µs, T = 25°C)
A
Anode
Reverse Peak Gate Voltage
V
RGM
(Pulse Width ≤ 1.0 µs, T = 25°C)
A
Operating Junction Temperature Range
T
J
–40 to
+110
ORDERING INFORMATION
@ Rated V
RRM
and V
DRM
Seedetailedorderingandshippinginformationinthepackage
dimensions section on page 549 of this data sheet.
Storage Temperature Range
T
–40 to
+150
°C
stg
Preferred devices are recommended choices for future use
and best overall value.
(1) V
andV
foralltypescanbeappliedonacontinuousbasis.Ratings
RRM
DRM
apply for zero or negative gate voltage; however, positive gate voltage
shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
Semiconductor Components Industries, LLC, 2000
543
Publication Order Number:
May, 2000 – Rev. 3
MCR22–6/D
MCR22–6, MCR22–8
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
50
Unit
°C/W
°C/W
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Lead Solder Temperature
R
R
θJC
160
+260
θJA
T
L
(Lead Length
1/16″ from case, 10 s Max)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current
I
, I
DRM RRM
(V
AK
= Rated V
DRM
or V
; R
RRM GK
= 1000 Ohms)
T
T
= 25°C
= 110°C
—
—
—
—
10
200
µA
µA
C
C
ON CHARACTERISTICS
(1)
Peak Forward On–State Voltage
V
—
1.2
1.7
Volts
µA
TM
(I
TM
= 1 A Peak)
(2)
Gate Trigger Current (Continuous dc)
(V = 6 Vdc, R = 100 Ohms)
T
T
= 25°C
= –40°C
I
—
—
30
—
200
500
C
C
GT
AK
Gate Trigger Voltage (Continuous dc)
(V = 7 Vdc, R = 100 Ohms)
L
(2)
T
T
= 25°C
= –40°C
V
—
—
—
—
0.8
1.2
Volts
Volts
mA
C
C
GT
AK
Gate Non–Trigger Voltage
(V = 12 Vdc, R = 100 Ohms)
L
(1)
V
GD
0.1
—
—
T
= 110°C
AK
Holding Current
(V = 12 Vdc, Gate Open)
L
C
I
H
T
T
= 25°C
= –40°C
—
—
2.0
—
5.0
10
AK
C
C
Initiating Current = 200 mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
dv/dt
—
25
—
V/µs
(T = 110°C)
C
(1) Pulse Width =1.0 ms, Duty Cycle 1%.
(2) R
Current not included in measurement.
GK
http://onsemi.com
544
MCR22–6, MCR22–8
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
at V
DRM DRM
I
H
Holding Current
I
Reverse Blocking Region
(off state)
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
CURRENT DERATING
140
100
60
140
120
100
80
dc
α = 180°
α = CONDUCTION
ANGLE
60
dc
40
α = 180°
20
0
20
0
α = CONDUCTION ANGLE
0.2 0.4
I , AVERAGE ON-STATE CURRENT (AMP)
T(AV)
0
0.2 0.4
0.6 0.8
1.0 1.2 1.4 1.6 1.8 2.0
0
0.6
0.8
1.0
I
, AVERAGE ON-STATE CURRENT (AMPS)
T(AV)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
http://onsemi.com
545
MCR22–6, MCR22–8
5.0
3.0
2.0
T = 110°C
J
25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0
0.5
1.0
1.5
2.0
2.5
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
Figure 3. Typical Forward Voltage
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
2000
5000 10000
t, TIME (ms)
Figure 4. Thermal Response
http://onsemi.com
546
MCR22–6, MCR22–8
TYPICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
100
V
= 7.0 V
AK
50
R = 100
L
30
20
10
5.0
3.0
2.0
0.4
0.3
1.0
–40
–75
–50
–25
0
25
50
75
100 110
–20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Gate Trigger Voltage
Figure 6. Typical Gate Trigger Current
2.0
10
1.8
1.6
1.4
180°
120
°
90°
60°
V
= 12 V
AK
R = 100 Ω
30°
L
5.0
2.0
1.0
1.2
1.0
dc
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20
T , JUNCTION TEMPERATURE (°C)
–40
–20
0
40
60
80
100 110
I
, AVERAGE ON-STATE CURRENT (AMPS)
T(AV)
J
Figure 7. Typical Holding Current
Figure 8. Power Dissipation
http://onsemi.com
547
MCR22–6, MCR22–8
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A
H2A
H2B
H2B
H
W2
H4
H5
T1
L1
H1
W1
W
L
T
T2
F1
F2
D
P2
P1
P2
P
Figure 9. Device Positioning on Tape
Specification
Millimeter
Inches
Symbol
D
Item
Min
Max
Min
Max
0.1496
0.015
0.0945
.059
0.1653
3.8
4.2
Tape Feedhole Diameter
D2
F1, F2
H
0.020
0.110
.156
0.38
2.4
1.5
8.5
0
0.51
2.8
Component Lead Thickness Dimension
Component Lead Pitch
4.0
Bottom of Component to Seating Plane
Feedhole Location
H1
H2A
H2B
H4
H5
L
0.3346
0
0.3741
0.039
0.051
0.768
0.649
0.433
—
9.5
1.0
Deflection Left or Right
0
0
1.0
Deflection Front or Rear
0.7086
0.610
0.3346
0.09842
0.4921
0.2342
0.1397
0.06
18
19.5
16.5
11
Feedhole to Bottom of Component
Feedhole to Seating Plane
Defective Unit Clipped Dimension
Lead Wire Enclosure
15.5
8.5
2.5
12.5
5.95
3.55
0.15
—
L1
—
P
0.5079
0.2658
0.1556
0.08
12.9
6.75
3.95
0.20
1.44
0.65
19
Feedhole Pitch
P1
Feedhole Center to Center Lead
First Lead Spacing Dimension
Adhesive Tape Thickness
Overall Taped Package Thickness
Carrier Strip Thickness
P2
T
T1
—
0.0567
0.027
0.7481
0.2841
0.01968
T2
0.014
0.6889
0.2165
.0059
0.35
17.5
5.5
.15
W
Carrier Strip Width
W1
W2
6.3
Adhesive Tape Width
0.5
Adhesive Tape Position
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
http://onsemi.com
548
MCR22–6, MCR22–8
ORDERING & SHIPPING INFORMATION: MCR22 Series packaging options, Device Suffix
Europe
Equivalent
U.S.
Shipping
Description of TO92 Tape Orientation
MCR22–8RL1
Radial Tape and Reel (2K/Reel)
Bulk in Box (5K/Box)
Flat side of TO92 and adhesive tape visible
N/A, Bulk
MCR22–6,8
MCR22–6RLRA
MCR22–6RLRP
Radial Tape and Reel (2K/Reel)
Radial Tape and Fan Fold Box (2K/Box)
Radial Tape and Fan Fold Box (2K/Box)
Round side of TO92 and adhesive tape visible
Round side of TO92 and adhesive tape visible
Flat side of TO92 and adhesive tape visible
MCR22–8ZL1
http://onsemi.com
549
相关型号:
©2020 ICPDF网 联系我们和版权申明