MCR703AT4 [MOTOROLA]
4A, 100V, SCR, DPAK-3;
| 型号： | MCR703AT4 |
| 厂家： | 
MOTOROLA |
| 描述： | 4A, 100V, SCR, DPAK-3 |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preferred Device
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is
critical.
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• Small Size
SCRs
• Passivated Die Surface for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Recommend Electrical Replacement for C106
• Surface Mount Package — Case 369A
4.0 AMPERES RMS
100 thru 600 VOLTS
G
• Device Marking: Device Type, e.g., for MCR703A: CR703A,
A
K
Date Code
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
4
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off–State Voltage
V
V
Volts
DRM,
RRM
1
2
(T = –40 to +110°C, Sine Wave,
50 to 60 Hz, Gate Open) MCR703A
C
3
100
200
400
600
MCR704A
MCR706A
MCR708A
D–PAK
CASE 369A
STYLE 5
Peak Non-Repetitive Off–State Voltage
(Sine Wave, 50 to 60 Hz, Gate Open,
V
RSM
Volts
T
= –40 to +110°C)
MCR703A
MCR704A
MCR706A
MCR708A
150
250
450
650
C
PIN ASSIGNMENT
Gate
1
2
3
4
Anode
On–State RMS Current
(180° Conduction Angles, T = 90°C)
I
4.0
Amps
Amps
T(RMS)
Cathode
C
Anode
Average On–State Current
(180° Conduction Angles)
I
T(AV)
T
T
= –40 to +90°C
= +100°C
2.6
1.6
C
C
ORDERING INFORMATION
Non-Repetitive Surge Current
(1/2 Sine Wave, 60 Hz, T = 110°C)
(1/2 Sine Wave, 1.5 ms, T = 110°C)
I
Amps
TSM
25
35
Device
Package
Shipping
J
J
MCR703AT4
DPAK 369A
16mm Tape
and Reel
2
I t
2
A s
Circuit Fusing (t = 8.3 ms)
Forward Peak Gate Power
2.6
0.5
P
Watt
Watt
Amp
°C
(2.5K/Reel)
GM
(Pulse Width ≤ 10 s, T = 90°C)
C
MCR704AT4
MCR706AT4
MCR708AT4
DPAK 369A
DPAK 369A
DPAK 369A
16mm Tape
and Reel
(2.5K/Reel)
Forward Average Gate Power
(t = 8.3 ms, T = 90°C)
P
0.1
0.2
G(AV)
C
Forward Peak Gate Current
(Pulse Width ≤ 10 s, T = 90°C)
I
GM
C
16mm Tape
and Reel
(2.5K/Reel)
Operating Junction Temperature Range
T
J
–40 to
+110
Storage Temperature Range
T
–40 to
+150
°C
stg
16mm Tape
and Reel
(1) V
DRM
and V for all types can be applied on a continuous basis. Ratings
RRM
(2.5K/Reel)
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2000
597
Publication Order Number:
May, 2000 – Rev. 4
MCR703A/D
MCR703A Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.33
80
Unit
°C/W
°C/W
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
(1)
θJA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
L
260
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current
I
, I
µA
DRM RRM
(V
AK
= Rated V
DRM
or V
; R
RRM GK
= 1 KΩ)
T
C
T
C
= 25°C
= 110°C
—
—
—
—
10
200
ON CHARACTERISTICS
Peak Forward “On” Voltage
V
TM
—
—
2.2
Volts
(I
TM
= 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle)
(2)
Gate Trigger Current (Continuous dc)
(V = 12 Vdc, R = 24 Ohms)
I
µA
GT
T
C
T
C
= 25°C
= –40°C
—
—
25
—
75
300
AK
L
(2)
Gate Trigger Voltage (Continuous dc)
(V = 12 Vdc, R = 24 Ohms)
T
T
= 25°C
= –40°C
V
—
—
—
—
0.8
1.0
Volts
Volts
mA
C
C
GT
AK
Gate Non-Trigger Voltage
(V = 12 Vdc, R = 100 Ohms, T = 110°C)
L
(2)
V
GD
0.2
—
—
AK
Holding Current
(V = 12 Vdc, Gate Open)
L
C
I
H
T
C
T
C
= 25°C
= –40°C
—
—
—
—
5.0
10
AK
(Initiating Current = 200 mA)
Peak Reverse Gate Blocking Voltage
(I = 10 µA)
V
10
—
—
12.5
18
1.2
—
Volts
µA
RGM
GR
Peak Reverse Gate Blocking Current
(V = 10 V)
I
—
RGM
GR
Total Turn-On Time
(Source Voltage = 12 V, R = 6 k Ohms)
t
2.0
µs
gt
S
(I
TM
= 8.2 A, I
= 2 mA, Rated V )
GT
DRM
(Rise Time = 20 ns, Pulse Width = 10 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
dv/dt
di/dt
—
—
10
—
—
V/µs
A/µs
(V = Rated V = 1 KΩ, Exponential Waveform,
, R
DRM GK
D
C
T
= 110°C)
Repetitive Critical Rate of Rise of On–State Current
(Cf = 60 Hz, I = 30 A, PW = 100 µs, diG/dt = 1 A/µs)
100
PK
(1) Case 369A when surface mounted on minimum pad sizes recommended.
(2) R current not included in measurement.
GK
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598
MCR703A Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
at V
DRM DRM
I
H
Holding Current
I
Reverse Blocking Region
(off state)
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
110
105
5.0
4.0
3.0
2.0
30°C
60°C
30°C
60°C
90°C
90°C
120°C
120°C
180°C
180°C
DC
DC
100
95
1.0
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
I
, AVERAGE ON–STATE CURRENT (AMPS)
I , AVERAGE ON–STATE CURRENT (AMPS)
T(AV)
T(AV)
Figure 1. Average Current Derating
Figure 2. On–State Power Dissipation
100
10
1.0
Typical @ T = 25°C
J
Maximum @ T = 110°C
J
Z
= R
•r(t)
JC(t)
JC(t)
0.1
Maximum @ T = 25°C
J
1.0
0.1
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1
1.0
10
100
1000
10,000
V , INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
T
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
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599
MCR703A Series
35
30
25
1.0
0.5
20
15
0
–40
–20
0
20
40
60
80
100 110
–40
–20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0
1.5
1.0
2.0
1.5
1.0
0.5
0
0.5
0
–40
–20
0
20
40
60
80
100 110
–40
–20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
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600
MCR703A Series
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.165
4.191
0.118
3.0
0.100
2.54
0.063
1.6
0.190
4.826
0.243
6.172
inches
mm
DPAK
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601
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