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MF122 [MOTOROLA]

COMPLEMENTARY SILICON POWER DARLINGTONS; 互补颖电DARLINGTONS
MF122
型号： MF122
厂家： MOTOROLA    MOTOROLA
描述：

COMPLEMENTARY SILICON POWER DARLINGTONS
互补颖电DARLINGTONS
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by MF122/D  
SEMICONDUCTOR TECHNICAL DATA  
For Isolated Package Applications  
Designed for general–purpose amplifiers and switching applications, where the  
mounting surface of the device is required to be electrically isolated from the heatsink  
or chassis.  
COMPLEMENTARY  
SILICON  
POWER DARLINGTONS  
5 AMPERES  
•
•
•
•
•
•
•
Electrically Similar to the Popular TIP122 and TIP127  
100 V  
5 A Rated Collector Current  
No Isolating Washers Required  
Reduced System Cost  
CEO(sus)  
100 VOLTS  
30 WATTS  
High DC Current Gain — 2000 (Min) @ I = 3 Adc  
C
RMS  
UL Recognized, File #E69369, to 3500 V  
Isolation  
CASE 221D–02  
TO–220 TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CB  
V
EB  
RMS Isolation Voltage (1)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 14  
Test No. 2 Per Fig. 15  
Test No. 3 Per Fig. 16  
V
ISOL  
4500  
3500  
1500  
V
RMS  
T
= 25 C)  
A
Collector Current — Continuous  
Peak  
I
5
8
Adc  
Adc  
C
Base Current  
I
0.12  
B
Total Power Dissipation* @ T = 25 C  
C
Derate above 25 C  
P
D
30  
0.24  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2
Watts  
W/ C  
0.016  
Operating and Storage Junction Temperature Range  
T , T  
–65 to +150  
I
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
4.1  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case*  
Lead Temperature for Soldering Purpose  
R
R
θJA  
θJC  
T
L
260  
* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on  
a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.  
(1) Proper strike and creepage distance must be provided.  
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1)  
V
100  
—
—
10  
10  
2
Vdc  
µAdc  
µAdc  
mAdc  
CEO(sus)  
(I = 100 mAdc, I = 0)  
C
B
Collector Cutoff Current  
(V = 50 Vdc, I = 0)  
I
I
CEO  
CE  
Collector Cutoff Current  
(V = 100 Vdc, I = 0)  
B
—
CBO  
CB  
E
Emitter Cutoff Current (V  
= 5 Vdc, I = 0)  
I
EBO  
—
BE  
ON CHARACTERISTICS (1)  
DC Current Gain (I = 0.5 Adc, V  
C
= 3 Vdc)  
CE  
= 3 Vdc)  
h
FE  
1000  
2000  
—
—
—
C
DC Current Gain (I = 3 Adc, V  
CE  
C
Collector–Emitter Saturation Voltage (I = 3 Adc, I = 12 mAdc)  
V
CE(sat)  
—
—
2
3.5  
Vdc  
Vdc  
C
B
Collector–Emitter Saturation Voltage (I = 5 Adc, I = 20 mAdc)  
C
B
Base–Emitter On Voltage (I = 3 Adc, V  
C
= 3 Vdc)  
V
—
2.5  
CE  
BE(on)  
DYNAMIC CHARACTERISTICS  
Small–Signal Current Gain (I = 3 Adc, V  
C
= 4 Vdc, f = 1 MHz)  
h
fe  
4
—
—
CE  
Output Capacitance  
MJF127  
MJF122  
C
—
—
300  
200  
pF  
ob  
(V  
CB  
= 10 Vdc, I = 0, f = 0.1 MHz)  
E
(1) Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2%.  
5
t
s
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS  
C
3
2
B
V
CC  
– 30 V  
D , MUST BE FAST RECOVERY TYPES, e.g.,  
1
1N5825 USED ABOVE I  
≈
100 mA  
100 mA  
B
R
C
MSD6100 USED BELOW I  
≈
B
SCOPE  
t
f
TUT  
1
V
R
2
B
0.7  
0.5  
APPROX.  
+8 V  
≈
8 k  
≈
120  
D
51  
1
0.3  
0.2  
0
t
@ V  
= 0 V  
t
d BE(off)  
r
V
1
V
= 30 V  
/I = 250  
CC  
APPROX.  
–12 V  
+ 4 V  
I
I
C B  
= I  
25 µs  
0.1  
0.07  
0.05  
PNP  
NPN  
B1 B2  
= 25°C  
T
J
t , t  
r
≤
10 ns  
FOR t AND t , D IS DISCONNECTED  
f
d
r
1
DUTY CYCLE = 1%  
AND V = 0  
2
0.1  
0.5 0.7  
1
2
3
5
7
10  
0.2 0.3  
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.  
I
, COLLECTOR CURRENT (AMP)  
C
Figure 2. Typical Switching Times  
Figure 1. Switching Times Test Circuit  
2
Motorola Bipolar Power Transistor Device Data  
T
T
C
A
80  
60  
40  
20  
0
4
3
2
T
C
T
A
1
0
20  
40  
60  
80  
100  
C)  
120  
140  
160  
T, TEMPERATURE (  
°
Figure 3. Maximum Power Derating  
1
0.5  
0.3  
0.2  
0.1  
SINGLE PULSE  
R
= r(t) R  
θ
θ
JC(t)  
JC  
0.05  
T
– T = P  
R
(t)  
JC  
J(pk)  
C
(pk)  
θ
0.03  
0.02  
0.01  
0.1  
0.5  
1
2
3
5
10  
20 30  
50  
100  
200 300 500  
1K  
2K 3K  
5K  
10K  
0.2 0.3  
t, TIME (ms)  
Figure 4. Thermal Response  
10  
5
100  
µs  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
down. Safe operating area curves indicate I – V  
limits of  
1 ms  
C
CE  
3
2
T
= 150  
°C  
J
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
dc  
5 ms  
1
The data of Figure 5 is based on T  
variable depending on conditions. Secondary breakdown  
= 150 C; T is  
C
J(pk)  
CURRENT LIMIT  
0.5  
pulse limits are valid for duty cycles to 10% provided T  
SECONDARY BREAKDOWN  
LIMIT  
J(pk)  
0.3  
0.2  
< 150 C. T  
may be calculated from the data in Figure 4.  
J(pk)  
THERMAL LIMIT @  
At high case temperatures, thermal limitations will reduce the  
power that can be handled to values less than the limitations  
imposed by secondary breakdown.  
T
= 25  
°
C (SINGLE PULSE)  
C
0.1  
1
2
3
5
10 20  
30  
50  
100  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 5. Maximum Forward Bias  
Safe Operating Area  
3
Motorola Bipolar Power Transistor Device Data  
10,000  
5000  
300  
200  
T
= 25°C  
J
3000  
2000  
C
1000  
ob  
500  
300  
200  
T
V
= 25°C  
C
100  
70  
= 4 Vdc  
CE  
= 3 Adc  
I
C
C
ib  
100  
50  
30  
20  
50  
PNP  
NPN  
PNP  
NPN  
10  
30  
1
2
5
10  
20  
50  
100  
200  
500 1000  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
f, FREQUENCY (kHz)  
V
, REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Typical Small–Signal Current Gain  
Figure 7. Typical Capacitance  
NPN  
PNP  
MJF122  
MJF127  
20,000  
10,000  
5000  
20,000  
10,000  
V
= 4 V  
V
= 4 V  
CE  
CE  
7000  
5000  
T
= 150°C  
T
= 150°C  
J
J
3000  
2000  
3000  
2000  
25°C  
25°C  
1000  
500  
1000  
700  
500  
–55°C  
–55°C  
300  
200  
300  
200  
0.1  
0.2 0.3  
I
0.5 0.7  
1
2
3
5
7
10  
0.1  
0.2 0.3  
I
0.5 0.7  
1
2
3
5
7
10  
, COLLECTOR CURRENT (AMP)  
, COLLECTOR CURRENT (AMP)  
C
C
Figure 8. Typical DC Current Gain  
3
3
T
J
= 25°C  
T
= 25°C  
J
2.6  
2.6  
2.2  
1.8  
I
= 2 A  
I = 2 A  
C
6 A  
4 A  
4 A  
C
6 A  
2.2  
1.8  
1.4  
1
1.4  
1
0.3  
0.5 0.7  
1
2
3
5
7
10  
20  
30  
0.3  
0.5 0.7  
1
2
I , BASE CURRENT (mA)  
B
3
5
7
10  
20 30  
I
, BASE CURRENT (mA)  
B
Figure 9. Typical Collector Saturation Region  
4
Motorola Bipolar Power Transistor Device Data  
NPN  
PNP  
MJF122  
MJF127  
3
2.5  
2
3
2.5  
2
T
= 25°C  
T = 25°C  
J
J
V
@ I /I = 250  
C B  
BE(sat)  
1.5  
1.5  
V
@ V  
CE  
= 4 V  
BE  
V
@ V = 4 V  
CE  
BE  
V
@ I /I = 250  
C B  
BE(sat)  
1
1
V
@ I /I = 250  
C B  
CE(sat)  
V
@ I /I = 250  
CE(sat)  
C B  
0.5  
0.1  
0.5  
0.2 0.3  
0.5 0.7  
1
2
3
5
7
10  
0.1  
0.2 0.3  
I
0.5 0.7  
1
2
3
5
7
10  
I
, COLLECTOR CURRENT (AMP)  
, COLLECTOR CURRENT (AMP)  
C
C
Figure 10. Typical “On” Voltages  
+ 5  
+ 5  
+ 4  
+ 3  
+ 2  
+ 1  
*I /I  
C B  
≤
h
+ 4  
+ 3  
+ 2  
+ 1  
0
FE 3  
*I /I ≤ h  
C B FE 3  
25°C to 150°C  
25°C to 150°C  
– 55°C to 25°C  
0
– 1  
– 2  
– 3  
– 4  
– 5  
– 1  
– 2  
– 3  
*
θ
FOR V  
*
θ
FOR V  
CE(sat)  
VC  
VB  
CE(sat)  
VC  
– 55°C to 25°C  
25°C to 150°C  
θ
FOR V  
BE  
– 55  
°
C to 25  
°C  
25°C to 150°C  
– 4  
– 5  
0.1  
– 55°C to 25°C  
θ
FOR V  
BE  
VB  
0.2 0.3  
0.1  
0.5 0.7  
1
2
3
5
7
10  
0.2 0.3  
I
0.5  
1
2
3
5
7
10  
, COLLECTOR CURRENT (AMP)  
I
, COLLECTOR CURRENT (AMP)  
C
C
Figure 11. Typical Temperature Coefficients  
5
5
10  
10  
FORWARD  
REVERSE  
REVERSE  
FORWARD  
4
3
2
1
0
4
3
2
1
0
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
V
= 30 V  
V
= 30 V  
CE  
CE  
T
= 150°C  
J
T
= 150°C  
J
100°  
C
C
100  
°
C
C
25°  
25°  
–1  
10  
–1  
10  
–0.6 – 0.4 –0.2  
0
+0.2 +0.4 +0.6 +0.8 +1  
+1.2 +1.4  
+0.6 +0.4 +0.2  
0
–0.2 –0.4 –0.6 –0.8 –1  
–1.2 –1.4  
V
, BASE–EMITTER VOLTAGE (VOLTS)  
V , BASE–EMITTER VOLTAGE (VOLTS)  
BE  
BE  
Figure 12. Typical Collector Cut–Off Region  
5
Motorola Bipolar Power Transistor Device Data  
NPN  
PNP  
MJF122  
MJF127  
COLLECTOR  
COLLECTOR  
BASE  
BASE  
≈
8 k  
≈
120  
≈
8 k  
≈
120  
EMITTER  
EMITTER  
Figure 13. Darlington Schematic  
TEST CONDITIONS FOR ISOLATION TESTS*  
MOUNTED  
FULLY ISOLATED  
PACKAGE  
MOUNTED  
FULLY ISOLATED  
MOUNTED  
FULLY ISOLATED  
PACKAGE  
PACKAGE  
CLIP  
CLIP  
0.107” MIN  
LEADS  
0.107” MIN  
LEADS  
LEADS  
HEATSINK  
0.110” MIN  
HEATSINK  
HEATSINK  
Figure 14. Clip Mounting Position  
for Isolation Test Number 1  
Figure 15. Clip Mounting Position  
for Isolation Test Number 2  
Figure 16. Screw Mounting Position  
for Isolation Test Number 3  
* Measurement made between leads and heatsink with all leads shorted together  
MOUNTING INFORMATION  
4–40 SCREW  
CLIP  
PLAIN WASHER  
HEATSINK  
COMPRESSION WASHER  
HEATSINK  
NUT  
Figure 17. Typical Mounting Techniques*  
Laboratorytestsonalimitednumberofsamplesindicate, whenusingthescrewandcompressionwashermountingtechnique, ascrew  
.
torque of 6 to 8 in lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-  
stant pressure on the package over time and during large temperature excursions.  
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will  
.
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.  
.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affecting the pack-  
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10  
.
in lbs of mounting torque under any mounting conditions.  
**For more information about mounting power semiconductors see Application Note AN1040.  
6
Motorola Bipolar Power Transistor Device Data  
PACKAGE DIMENSIONS  
SEATING  
–T–  
PLANE  
–B–  
C
NOTES:  
F
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
S
Q
H
U
INCHES  
MILLIMETERS  
DIM  
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MIN  
MAX  
0.629  
0.402  
0.189  
0.034  
0.129  
MIN  
15.78  
10.01  
4.60  
MAX  
15.97  
10.21  
4.80  
A
0.621  
0.394  
0.181  
0.026  
0.121  
1
2 3  
0.67  
0.86  
3.08  
3.27  
–Y–  
K
0.100 BSC  
2.54 BSC  
0.123  
0.018  
0.500  
0.045  
0.129  
0.025  
0.562  
0.060  
3.13  
0.46  
3.27  
0.64  
12.70  
1.14  
14.27  
1.52  
G
N
J
0.200 BSC  
5.08 BSC  
R
0.126  
0.107  
0.096  
0.259  
0.134  
0.111  
0.104  
0.267  
3.21  
2.72  
2.44  
6.58  
3.40  
2.81  
2.64  
6.78  
L
D 3 PL  
U
M
M
0.25 (0.010)  
B
Y
STYLE 2:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
CASE 221D–02  
TO–220 TYPE  
ISSUE D  
7
Motorola Bipolar Power Transistor Device Data  
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA / EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
MJF122/D  
◊

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