MGY30N60D [MOTOROLA]
Insulated Gate Bipolar Transistor with Anti-Parallel Diode; 绝缘栅双极晶体管与反并联二极管
| 型号： | MGY30N60D |
| 厂家： | 
MOTOROLA |
| 描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 文件： | 总6页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MGY30N60D/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
IGBT & DIODE IN TO–264
30 A @ 90°C
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
•
•
•
•
•
•
Industry Standard High Power TO–264 Package (TO–3PBL)
C
E
High Speed E : 60 J per Amp typical at 125°C
off
High Short Circuit Capability – 10 s minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
G
Robust RBSOA
G
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
600
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
V
CES
Collector–Gate Voltage (R
GE
= 1.0 MΩ)
V
CGR
600
Gate–Emitter Voltage — Continuous
V
GE
±20
Collector Current — Continuous @ T = 25°C
I
I
I
50
30
100
C
C
C25
C90
CM
— Continuous @ T = 90°C
— Repetitive Pulsed Current (1)
Apk
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
202
1.61
Watts
W/°C
C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
T , T
stg
–55 to 150
10
°C
J
t
sc
s
(V
CC
= 360 Vdc, V = 15 Vdc, T = 25°C, R = 20 Ω)
GE J G
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
R
R
R
0.62
1.41
35
°C/W
°C
θJC
θJC
θJA
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
T
260
L
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
BV
CES
Vdc
(V
= 0 Vdc, I = 250 µAdc)
600
—
—
870
—
—
GE
C
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Collector Current
I
CES
(V
CE
(V
CE
= 600 Vdc, V
= 600 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 125°C)
—
—
—
—
100
2500
GE
GE
J
Gate–Body Leakage Current (V
= ± 20 Vdc, V
CE
= 0 Vdc)
I
—
—
250
nAdc
Vdc
GE
GES
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
V
CE(on)
(V
GE
(V
GE
(V
GE
= 15 Vdc, I = 15 Adc)
—
—
—
2.20
2.10
2.60
2.90
—
3.45
C
= 15 Vdc, I = 15 Adc, T = 125°C)
C
J
= 15 Vdc, I = 30 Adc)
C
Gate Threshold Voltage
(V = V , I = 1 mAdc)
Threshold Temperature Coefficient (Negative)
V
Vdc
GE(th)
4.0
—
6.0
10
8.0
—
CE GE
C
mV/°C
Forward Transconductance (V = 10 Vdc, I = 30 Adc)
g
fe
—
15
—
Mhos
CE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
4280
225
19
—
—
—
pF
ns
ies
(V
CE
= 25 Vdc, V = 0 Vdc,
GE
Output Capacitance
C
oes
f = 1.0 MHz)
Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
76
80
—
—
—
—
1.28
—
—
—
—
—
—
—
—
—
—
—
—
d(on)
Rise Time
t
r
Turn–Off Delay Time
Fall Time
t
348
188
0.98
2.00
2.98
73
(V
CC
= 360 Vdc, I = 30 Adc,
C
= 15 Vdc, L = 300 H
d(off)
V
GE
G
t
f
R
= 20 Ω, T = 25°C)
J
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
Energy losses include “tail”
E
mJ
ns
off
on
E
E
ts
t
t
d(on)
t
95
r
Turn–Off Delay Time
Fall Time
394
418
1.90
3.10
5.00
150
30
(V
CC
= 360 Vdc, I = 30 Adc,
C
= 15 Vdc, L = 300 H
d(off)
V
R
GE
G
t
f
= 20 Ω, T = 125°C)
J
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
Energy losses include “tail”
E
mJ
nC
off
E
on
E
ts
Q
Q
Q
T
1
2
(V
CC
= 360 Vdc, I = 30 Adc,
C
V
= 15 Vdc)
GE
45
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
V
FEC
Vdc
(I
EC
(I
EC
(I
EC
= 15 Adc)
= 15 Adc, T = 125°C)
= 30 Adc)
—
—
—
1.30
1.10
1.45
1.80
—
2.05
J
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(continued)
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
J
Characteristic
DIODE CHARACTERISTICS — continued
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
t
—
—
—
—
—
—
—
—
153
82
—
—
—
—
—
—
—
—
ns
rr
t
t
a
(I = 30 Adc, V = 360 Vdc,
F
R
dI /dt = 200 A/µs)
F
71
b
Reverse Recovery Stored Charge
Reverse Recovery Time
Q
2.3
208
117
91
µC
RR
t
rr
ns
t
a
(I = 30 Adc, V = 360 Vdc,
F
F
R
dI /dt = 200 A/µs, T = 125°C)
J
t
b
Reverse Recovery Stored Charge
Q
3.8
µC
RR
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
nH
—
13
—
TYPICAL ELECTRICAL CHARACTERISTICS
60
40
20
0
60
12.5 V
T
= 25
°C
V
= 20 V
12.5 V
T
= 125
°
C
V
= 20 V
J
GE
J
GE
17.5 V
15 V
17.5 V
15 V
10 V
10 V
40
20
0
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 1. Output Characteristics, T = 25°C
Figure 2. Output Characteristics, T = 125°C
J
J
60
40
20
3
2.6
2.2
V
5
= 100 V
V
= 15 V
s PULSE WIDTH
CE
s PULSE WIDTH
GE
80
µ
µ
I
= 30 A
22.5 A
15 A
C
T
= 125°C
J
25°C
0
1.8
5
6
7
8
9
10
11
–50
0
50
100
C)
150
V
, GATE–TO–EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°
J
GE
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3
8000
6000
4000
20
15
10
5
V
= 0 V
T = 25°C
J
CE
Q
T
C
ies
Q
Q
2
1
T
= 25°C
= 30 A
J
2000
0
I
C
C
oes
C
res
0
0
5
10
15
20
25
0
30
60
90
120
150
150
50
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
6.4
5.6
4.8
4
6.5
5.5
4.5
3.5
2.5
1.5
0.5
V
V
= 360 V
= 15 V
= 125°C
CC
GE
V
V
R
= 360 V
= 15 V
= 20 Ω
CC
GE
G
T
J
I
= 30 A
C
I
= 30 A
C
20 A
10 A
3.2
2.4
1.6
0.8
0
20 A
10 A
10
20
R
30
40
50
0
25
50
75
100
125
, GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (
°
C)
G
J
Figure 7. Total Switching Losses versus
Gate Resistance
Figure 8. Total Switching Losses versus
Junction Temperature
5
4
3
2
1
0
3
2
V
V
T
= 360 V
= 15 V
V
= 360 V
= 15 V
Ω
= 125°C
CC
CC
V
R
GE
= 125
GE
= 20
°C
J
G
I
= 30 A
C
T
J
20 A
1
0
10 A
0
5
10
15
20
25
30
10
20
30
R , GATE RESISTANCE (OHMS)
G
40
I
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
C
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
Figure 10. Turn–Off Losses versus
Gate Resistance
4
Motorola TMOS Power MOSFET Transistor Device Data
3
2
1
0
2
1.5
1
V
V
R
= 360 V
= 15 V
= 20 Ω
CC
GE
G
V
V
R
= 360 V
= 15 V
= 20 Ω
CC
GE
G
T
= 125°C
J
I
= 30 A
C
20 A
10 A
0.5
0
0
25
50
75
100
125
150
0
5
10
I , COLLECTOR–TO–EMITTER CURRENT (AMPS)
C
15
20
25
30
T , JUNCTION TEMPERATURE (
°C)
J
Figure 11. Turn–Off Losses versus
Junction Temperature
Figure 12. Turn–Off Losses versus
Collector–to–Emitter Current
100
10
1
100
10
1
T
= 125°C
J
T
= 25°C
J
V
R
= 15 V
GE
= 20 Ω
GE
= 125°C
T
J
0.1
0.1
0
0.4
0.8
1.2
1.6
1
10
100
1000
V
, FORWARD VOLTAGE DROP (VOLTS)
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
FM
CE
Figure 13. Typical Diode Forward Drop versus
Instantaneous Forward Current
Figure 14. Reverse Biased Safe
Operating Area
Motorola TMOS Power MOSFET Transistor Device Data
5
PACKAGE DIMENSIONS
M
M
0.25 (0.010)
T B
–Q–
U
–T–
NOTES:
–B–
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
E
MILLIMETERS
INCHES
N
DIM
A
B
C
D
E
MIN
2.8
MAX
2.9
MIN
MAX
1.142
0.800
0.209
0.058
0.083
0.102
1.102
0.760
0.185
0.037
0.075
0.087
A
K
19.3
4.7
20.3
5.3
0.93
1.9
1.48
2.1
L
1
2
3
R
F
2.2
2.4
–Y–
G
H
J
K
L
N
P
Q
R
U
W
5.45 BSC
0.215 BSC
2.6
0.43
17.6
11.0
3.95
2.2
3.0
0.78
18.8
11.4
4.75
2.6
0.102
0.017
0.693
0.433
0.156
0.087
0.122
0.085
0.240
0.110
0.118
0.031
0.740
0.449
0.187
0.102
0.137
0.093
0.256
0.125
P
W
3.1
3.5
F 2 PL
2.15
6.1
2.35
6.5
G
J
H
2.8
3.2
D 3 PL
0.25 (0.010)
STYLE 5:
PIN 1. GATE
M
S
Y
Q
2. COLLECTOR
3. EMITTER
CASE 340G–02
TO–264
ISSUE E
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MGY30N60D/D
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