MJ11018 [MOTOROLA]
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS; 30安培达林顿功率晶体管互补硅60.120伏200瓦
| 型号： | MJ11018 |
| 厂家： | 
MOTOROLA |
| 描述： | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| 文件： | 总6页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJ11017/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
•
•
High dc Current Gain @ 10 Adc — h
Collector–Emitter Sustaining Voltage
= 400 Min (All Types)
FE
V
V
= 150 Vdc (Min) – MJ11018, 17
= 250 Vdc (Min) – MJ11022, 21
CEO(sus)
CEO(sus)
*Motorola Preferred Device
•
Low Collector–Emitter Saturation
V
V
= 1.0 V (Typ) @ I = 5.0 A
CE(sat)
CE(sat)
C
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
= 1.8 V (Typ) @ I = 10 A
C
•
•
Monolithic Construction
100% SOA Tested @ V
= 44 V, I = 4.0 A, t = 250 ms.
CE
C
MAXIMUM RATINGS
60–120 VOLTS
200 WATTS
MJ11018
MJ11017
MJ11022
MJ11021
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
150
250
250
V
150
CB
EB
V
50
Collector Current —
Continuous Peak
I
C
15
30
Base Current
I
B
0.5
Adc
Total Device Dissipation @ T = 25 C
C
Derate Above 25 C
P
D
175
1.16
Watts
W/ C
Operating and Storage Junction
Temperature Range
T , T
–65 to +175
–65 to +200
C
J
stg
CASE 1–07
TO–204AA
(TO–3)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle
R
0.86
C/W
θJC
10%.
200
150
100
50
0
0
25
50
75
100
125
150
C)
175
200
T
, CASE TEMPERATURE (
°
C
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 0. 1 Adc, I = 0)
MJ11017, MJ11018
MJ11021, MJ11022
150
250
—
—
C
B
Collector Cutoff Current
I
mAdc
mAdc
CEO
(V
CE
(V
CE
= 75, I = 0)
MJ11017, MJ11018
MJ11021, MJ11022
—
—
1.0
1.0
B
= 125, I = 0)
B
Collector Cutoff Current
I
CEV
EBO
(V
CE
(V
CE
= Rated V , V
= Rated V , V
CB BE(off)
= 1.5 Vdc)
= 1.5 Vdc, T = 150 C)
—
—
0.5
5.0
CB BE(off)
J
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I = 0)
I
—
2.0
mAdc
—
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 10 Adc, V
(I = 15 Adc, V
C
= 5.0 Vdc)
= 5.0 Vdc)
400
100
15,000
—
C
CE
CE
Collector–Emitter Saturation Voltage
(I = 10 Adc, I = 100 mA)
V
Vdc
CE(sat)
—
—
2.0
3.4
C
B
(I = 15 Adc, I = 150 mA)
C
B
Base–Emitter On Voltage
= 10 A, V = 5.0 Vdc)
V
—
2.8
Vdc
Vdc
BE(on)
I
C
CE
Base–Emitter Saturation Voltage
(I = 15 Adc, I = 150 mA)
V
—
3.8
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product
[h
]
3.0
—
Mhz
pF
fe
(I = 10 Adc, V
C CE
= 3.0 Vdc, f = 1.0 MHz)
Output Capacitance (V
CB
= 10 Vdc, I = 0, f = 0.1 MHz)
C
ob
E
MJ11018, MJ11022
MJ11017, MJ11021
—
—
400
600
Small–Signal Current Gain
(I = 10 Adc, V = 3.0 Vdc, f = 1.0 kHz)
h
fe
75
—
—
C
CE
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
150
1.2
PNP
75
Unit
ns
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
0.5
2.7
2.5
µs
(V
CC
= 100 V, I = 10 A, I = 100 mA
C B
V
= 50 V) (See Figure 2.)
BE(off)
t
s
4.4
µs
t
f
10.0
µs
(1) Pulsed Test: Pulse Width = 300 µs, Duty Cycle
2%.
V
R
D
and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
CC
B
100 V
MUST BE FAST RECOVERY TYPE, e.g.:
1
R
C
1N5825 USED ABOVE I
≈
100 mA
100 mA
B
SCOPE
MSD6100 USED BELOW I
≈
TUT
B
V2
R
B
D
APPROX
+12 V
51
1
≈
10 K
≈
8.0
0
V1
+ 4.0 V
APPROX
– 8.0 V
25 µs
for t and t , D is disconnected
d
r
1
and V2 = 0
t , t
≤
10 ns
r
f
DUTY CYCLE = 1.0%
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
P
(pk)
R
R
(t) = r(t) R
θ
0.1
0.07
0.05
θ
θ
JC
JC
JC
(t) = 0.86
°
C/W MAX
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.01
0.03
0.02
t
1
2
T
– T = P R (t)
(pk) θJC
SINGLE PULSE
J(pk)
C
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.02
0.03 0.05 1.0
0.2
0.3 0.5 1.0
2.0
3.0 5.0
10
20
30
50
100
200 300
500
1000
t, TIME (ms)
Figure 3. Thermal Response
FORWARD BIAS
5.0 ms
dc
1.0 ms
0.5 ms
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate I – V
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
30
20
0.1 ms
limits of
C
CE
10
5.0
3.0
2.0
T
= 175°C
J
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ T = 25°C
The data of Figure 4 is based on T
variable dependIng on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
= 175 C, T is
C
J(pk)
1.0
C
0.5
0.3
0.2
J(pk)
SINGLE PULSE
175 C. T
may be calculated from the data in Figure 3.
J(pk)
MJ11017, 18
MJ11021, 22
At high case temperatures thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
0
3.0
5.0 7.0 10
20
30 50
70
100 150200
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 4. Maximum Rated Forward Bias Safe
Operating Area (FBSOA)
REVERSE BIAS
30
L = 200
/I
µH
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be hold to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 5 gives ROSOA characteristics.
I
≥
50
C B1
T
V
R
= 25
°C
C
0 – 5.0 V
BE(off)
20
= 47 Ω
BE
DUTY CYLE = 10%
10
0
MJ11017, 18
MJ11021, 22
0
20
60
100
140
180
220
260
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Maximum RBSOA, Reverse Bias Safe
Operating Area
3
Motorola Bipolar Power Transistor Device Data
PNP
NPN
10,000
7000
30,000
20,000
V
= 5.0 Vdc
CE
V
= 5.0 Vdc
CE
5000
T
= 150°C
T
= 150
°
C
J
J
10,000
7000
5000
3000
2000
T
= 25°C
J
T
= 25°C
J
1000
700
3000
2000
T
= – 55
°C
J
T
= – 55°C
500
J
1000
300
200
700
500
100
300
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10 15 20
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
15 20
I
, COLLECTOR CURRENT (A)
I
, COLLECTOR CURRENT (A)
C
C
Figure 6. DC Current Gain
PNP
NPN
4.0
3.5
4.0
I
= 15 A
I = 15 A
C
T
= 25°C
T = 25°C
J
C
J
3.5
3.0
2.5
I
= 10 A
I = 10 A
C
C
3.0
2.5
I
= 5.0 A
I
= 5.0 A
C
C
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
0.5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200 300 500
0.5
1.0
0.7
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200 300 500
0.7
I
, BASE CURRENT (mA)
I , BASE CURRENT (mA)
B
B
Figure 7. Collector Saturation Region
PNP
NPN
4.0
4.0
3.5
3.5
3.0
2.5
T
= 25°C
J
T
= 25°C
J
3.0
2.5
2.0
1.5
2.0
1.5
V
@ I /I = 100
C B
BE(sat)
V
@ I /I = 100
C B
BE(sat)
V
@ V = 5.0 V
CE
BE
1.0
0.5
1.0
0.5
V
@ V = 5.0 V
CE
BE
V
@ I /I = 100
V
@ I /I = 100
C B
CE(sat) C B
CE(sat)
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
70
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
5
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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MJ11017/D
◊
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