MJ1302A [MOTOROLA]
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR; COMEPLEMENTARY NPN - PNP硅功率晶体管BOPOLAR
| 型号： | MJ1302A |
| 厂家： | 
MOTOROLA |
| 描述： | COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJ3281A/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
The MJ3281A and MJ1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
•
•
Designed for 100 W Audio Frequency
Gain Complementary:
250 WATTS
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— h
= 45 (Min) @ I = 8 A
FE
C
•
•
•
Low Harmonic Distortion
High Safe Operation Area — 1 A/100 V @ 1 sec
High f — 30 MHz Typical
T
CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector–Emitter Voltage
Symbol
Value
200
200
7
Unit
Vdc
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage — 1.5 V
Collector Current — Continuous
V
CEX
200
I
C
15
25
(1)
Collector Current — Peak
Base Current — Continuous
I
B
1.5
Adc
Total Power Dissipation @ T = 25°C
Derate Above 25°C
P
D
250
1.43
Watts
W/°C
C
Operating and Storage Junction Temperature Range
T , T
–65 to +200
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
R
0.7
°C/W
θJC
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
V
200
7
—
—
—
—
—
—
—
50
5
Vdc
Vdc
CEO(sus)
C
B
Emitter–Base Voltage
(I = 100 µAdc, I = 0)
V
EBO
E
C
Collector Cutoff Current
(V = 200 Vdc, I = 0)
I
—
—
—
µAdc
µAdc
µAdc
CBO
CB
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
E
I
I
EBO
EB
Emitter Cutoff Current
(V = 7 Vdc, I = 0)
C
25
EBO
EB
C
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
I
Adc
S/b
(V
CE
(V
CE
= 50 Vdc, t = 1 s (non–repetitive)
= 100 Vdc, t = 1 s (non–repetitive)
4
1
—
—
—
—
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 100 mAdc, V
CE
= 5 Vdc)
60
60
60
60
60
45
12
125
—
—
—
115
—
175
175
175
175
175
—
C
(I = 1 Adc, V
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
C
CE
CE
CE
CE
CE
(I = 3 Adc, V
C
(I = 5 Adc, V
C
(I = 7 Adc, V
C
(I = 8 Adc, V
C
(I = 15 Adc, V
CE
= 5 Vdc)
35
—
C
Collector–Emitter Saturation Voltage
(I = 10 Adc, I = 1 Adc)
V
—
—
3
Vdc
CE(sat)
C
B
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
—
—
30
—
—
MHz
pF
T
(I = 1 Adc, V
C CE
= 5 Vdc, f = 1 MHz)
test
Output Capacitance
(V = 10 Vdc, I = 0, f
C
600
ob
= 1 MHz)
CB test
E
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
PNP MJ1302A
NPN MJ3281A
100
100
V
= 10 V
CE
V
= 10 V
CE
10
V
= 5 V
10
CE
V
6
= 5 V
CE
T
f
= 25°C
T
f
= 25°C
J
J
= 1 MHz
= 1 MHz
test
test
1
1
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
7
8
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 1. Current–Gain — Bandwidth Product
PNP MJ1302A
Figure 2. Current–Gain — Bandwidth Product
NPN MJ3281A
1000
1000
V
= 20 V
CE
100
100
V
= 20 V
= 5 V
CE
V
= 5 V
CE
V
CE
10
0.1
10
0.1
1
10
100
1
10
I , COLLECTOR CURRENT (AMPS)
C
100
I
, COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain
Figure 4. DC Current Gain
PNP MJ1302A
NPN MJ3281A
1000
1000
V
= 5 V
CE
V
= 5 V
CE
25°C
25°C
100
°
C
C
100°C
100
100
–25°C
–25°
10
0.1
10
0.1
1
10
100
1
10
I , COLLECTOR CURRENT (AMPS)
C
100
I
, COLLECTOR CURRENT (AMPS)
C
Figure 5. DC Current Gain, V
= 5 V
Figure 6. DC Current Gain, V
= 5 V
CE
CE
3
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
PNP MJ1302A
NPN MJ3281A
1.8
1.6
1.4
3.2
T
= 25°C
J
T
= 25°C
J
2.8
2.4
2
1.6
1.2
0.8
0.4
0
1.2
1
10
11
12
13
14
15
16
17
18
19
20
0
2
4
6
8
10
I , COLLECTOR CURRENT (AMPS)
C
12
14
16
18
20
I
, COLLECTOR CURRENT (AMPS)
C
Figure 7. Typical Base–Emitter Voltage
PNP MJ1302A
Figure 8. Typical Base–Emitter Voltage
NPN MJ3281A
20
16
12
20
16
T
= 25°C
J
I
= 1 A
I
= 1 A
0.4 A
B
B
0.6 A
0.6 A
0.4 A
0.8 A
0.8 A
0.2 A
0.2 A
12
8
8
4
0
4
0
T
= 25°C
J
0
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 9. Typical Output Characteristics
Figure 10. Typical Output Characteristics
100
10
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I – V
C
CE
limits of the transistor that must be observed for reliable op-
eration; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T
= 200°C; T is
J(pk)
C
1
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by se-
cond breakdown.
250 ms
1 s
0.1
1
10
100
1000
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 11. Forward Bias Safe Operating Area (FBSOA)
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
5
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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MJ3281A/D
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