MJ802 [MOTOROLA]
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS; 30安培功率晶体管NPN硅100伏200瓦型号: | MJ802 |
厂家: | MOTOROLA |
描述: | 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS |
文件: | 总4页 (文件大小:140K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by MJ802/D
SEMICONDUCTOR TECHNICAL DATA
30 AMPERE
POWER TRANSISTOR
NPN SILICON
. . . for use as an output device in complementary audio amplifiers to 100–Watts
music power per channel.
100 VOLTS
200 WATTS
•
•
•
High DC Current Gain — h = 25–100 @ I = 7.5 A
FE C
Excellent Safe Operating Area
Complement to the PNP MJ4502
CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current
V
CER
100
100
90
V
CB
V
CEO
V
EB
4.0
30
I
C
Base Current
I
B
7.5
P
D
Total Device Dissipation @ T = 25°C
200
Watts
W/ C
C
Derate above 25 C
1.14
T , T
–65 to +200
C
Operating and Storage Junction Temperature Range
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
0.875
C/W
JC
200
150
100
50
0
160
0
20
40
60
80
100
120 140
C)
180 200
T
, CASE TEMPERATURE (
°
C
Figure 1. Power–Temperature Derating Curve
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
BV
100
90
—
—
Vdc
Vdc
Collector–Emitter Breakdown Voltage
(I = 200 mAdc, R
= 100 Ohms)
BE
CER
C
(1)
V
Collector–Emitter Sustaining Voltage
(I = 200 mAdc)
C
CEO(sus)
I
mAdc
Collector–Base Cutoff Current
CBO
1.0
5.0
(V
CB
(V
CB
= 100 Vdc, I = 0)
—
—
E
= 100 Vdc, I = 0, T = 150 C)
E
C
I
—
1.0
mAdc
Emitter–Base Cutoff Current (V
BE
= 4.0 Vdc, I = 0)
EBO
C
(1)
ON CHARACTERISTICS
(1)
h
25
—
—
—
100
1.3
0.8
1.3
—
DC Current Gain
(I = 7.5 Adc, V
CE
= 2.0 Vdc)
FE
C
V
Vdc
Vdc
Vdc
Base–Emitter “On” Voltage (I = 7.5 Adc, V
CE
= 2.0 Vdc)
BE(on)
C
V
Collector–Emitter Saturation Voltage (I = 7.5 Adc, I = 0.75 Adc)
CE(sat)
BE(sat)
C
B
V
Base–Emitter Saturation Voltage (I = 7.5 Adc, I = 0.75 Adc)
C
B
DYNAMIC CHARACTERISTICS
f
T
2.0
—
MHz
Current Gain — Bandwidth Product (I = 1.0 Adc, V
= 10 Vdc, f = 1.0 MHz)
2.0%.
C
CE
(1)
Pulse Test: Pulse Width
300 µs, Duty Cycle
3.0
2.0
2.0
1.8
1.6
1.4
1.2
1.0
T
= 175° C
J
T
= 25°C
J
V
= 2.0 V
CE
25°C
1.0
0.7
0.5
– 55°C
0.8
0.6
0.4
0.2
0
V
@ I /I = 10
C B
BE(sat)
0.3
0.2
V
@ V = 2.0 V
CE
BE
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF I
.
CBO
V
@ I /I = 10
C B
CE(sat)
0.1
0.03 0.05 0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
0.03 0.05 0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 2. DC Current Gain
Figure 3. ‘‘On” Voltages
100
50
100
µs
1.0 ms
20
10
The Safe Operating Area Curves indicate I – V
limits
CE
C
dc
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
5.0
5.0 ms
T
= 200° C
J
To insure operation below the maximum T , power tempera-
2.0
1.0
0.5
J
ture derating must be observed for both steady state and
pulse power conditions.
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS T = 25°C
C
0.2
0.1
PULSE DUTY CYCLE
≤ 10%
1.0
2.0 3.0
5.0
10
20
30
50
100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 4. Active Region Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
3
Motorola Bipolar Power Transistor Device Data
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MJ802/D
◊
相关型号:
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Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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