MJD32CT4 [MOTOROLA]
3A, 100V, PNP, Si, POWER TRANSISTOR, DPAK-3;
| 型号： | MJD32CT4 |
| 厂家： | 
MOTOROLA |
| 描述： | 3A, 100V, PNP, Si, POWER TRANSISTOR, DPAK-3 放大器 晶体管 |
| 文件： | 总6页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJD31C/D
SEMICONDUCTOR TECHNICAL DATA
DPAK For Surface Mount Applications
Motorola Preferred Devices
Designed for general purpose amplifier and low speed switching applications.
SILICON
POWER TRANSISTORS
3 AMPERES
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
100 VOLTS
15 WATTS
CASE 369A–13
MAXIMUM RATINGS
Rating
Symbol
Max
100
100
5
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CB
EB
CASE 369–07
V
I
C
Collector Current — Continuous
Peak
3
5
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
Base Current
I
1
Adc
B
P
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
15
Watts
W/ C
D
0.12
P
D
Total Power Dissipation* @ T = 25 C
A
Derate above 25 C
1.56
Watts
W/ C
0.012
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.3
80
Unit
C/W
C/W
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
Lead Temperature for Soldering Purposes
R
R
θJC
θJA
T
L
260
* These ratings are applicable when surface mounted on the minimum pad size recommended.
inches
mm
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1998
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
µAdc
µAdc
mAdc
Collector–Emitter Sustaining Voltage (1)
(I = 30 mAdc, I = 0)
CEO(sus)
100
—
—
50
20
1
C
B
I
Collector Cutoff Current
(V = 60 Vdc, I = 0)
CEO
CE
Collector Cutoff Current
(V = Rated V , V
B
ICES
—
= 0)
CE CEO EB
I
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
EBO
—
BE
C
ON CHARACTERISTICS (1)
h
FE
—
DC Current Gain
(I = 1 Adc, V
= 4 Vdc)
= 4 Vdc)
25
10
—
C
CE
CE
(I = 3 Adc, V
C
50
V
—
1.2
1.8
Vdc
Vdc
Collector–Emitter Saturation Voltage
(I = 3 Adc, I = 375 mAdc)
CE(sat)
C
B
V
—
Base–Emitter On Voltage
(I = 3 Adc, V = 4 Vdc)
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
3
—
—
MHz
—
Current Gain — Bandwidth Product (2)
T
(I = 500 mAdc, V
= 10 Vdc, f
= 1 MHz)
test
C
CE
Small–Signal Current Gain
(I = 0.5 Adc, V = 10 Vdc, f = 1 kHz)
h
20
fe
C
CE
(1) Pulse Test: Pulse Width
(2) f = h • f
300 µs, Duty Cycle
2%.
.
test
T
fe
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
V
CC
+30 V
2.5
2
R
C
25 µs
SCOPE
+11 V
0
R
B
D
1.5
1
T
A
51
1
–9 V
t , t
≤
10 ns
r
f
–4 V
DUTY CYCLE = 1%
R
and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
D
0.5
0
MUST BE FAST RECOVERY TYPE, e.g.:
1
1N5825 USED ABOVE I
≈
100 mA
100 mA
B
MSD6100 USED BELOW I
≈
B
REVERSE ALL POLARITIES FOR PNP.
25
50
75
100
125
150
T, TEMPERATURE (
°C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
2
1
500
300
I
T
/I = 10
C B
T
= 150
°C
V
= 2 V
J
CE
= 25°C
J
t @ V
= 30 V
CC
r
0.7
0.5
25°C
100
70
0.3
t @ V
= 10 V
–55°C
r
CC
50
30
0.1
0.07
0.05
t
@ V
= 2 V
BE(off)
d
10
7
0.03
0.02
5
0.03 0.05 0.07 0.1
0.3
0.5 0.7
1
3
0.03
0.07 0.1
0.3
I , COLLECTOR CURRENT (AMPS)
C
0.5 0.7
1
3
0.05
I
, COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain
Figure 4. Turn–On Time
3
2
1.4
1.2
I
I
t
= I
T
= 25
°C
B1 B2
J
/I = 10
t
′
C B
s
′
= t – 1/8 t
s f
= 25°C
s
1
t @ V
= 30 V
CC
f
T
1
J
0.7
0.5
0.8
V
@ I /I = 10
C B
0.3
0.2
t @ V
= 10 V
CC
BE(sat)
f
0.6
0.4
V
@ V
= 2 V
CE
BE
0.1
0.07
0.05
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.03
0.0030.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
3
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 5. “On” Voltages
Figure 6. Turn–Off Time
3
Motorola Bipolar Power Transistor Device Data
300
200
2
1.6
1.2
0.8
T
= +25°C
T
= 25°C
J
J
I
= 0.3 A
1 A
3 A
C
100
70
C
eb
50
0.4
0
C
cb
30
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30 40
1
2
5
10
20
50
100 200
500 1000
V , REVERSE VOLTAGE (VOLTS)
R
I
, BASE CURRENT (mA)
B
Figure 7. Collector Saturation Region
Figure 8. Capacitance
1
0.7
0.5
D = 0.5
0.2
0.3
0.2
P
(pk)
R
R
= r(t) R
θ
0.1
θ
θ
JC(t)
= 8.33
JC
C/W MAX
°
JC
0.05
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.07
0.05
t
0.01
1
READ TIME AT t
1
t
2
T
– T = P
θ
J(pk)
C
(pk) JC(t)
0.03
0.02
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
1 k
t, TIME (ms)
Figure 9. Thermal Response
10
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
5
100 µs
500 µs
3
2
down. Safe operating area curves indicate I – V
limits of
1 ms
C
CE
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1
dc
0.5
0.3
0.2
The data of Figure 10 is based on T
= 150 C; T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
T
T
= 25°C SINGLE PULSE
C
J
= 150°C
0.1
J(pk)
may be calculated from the data in Fig-
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
150 C. T
0.05
0.03
0.02
J(pk)
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
CURVES APPLY BELOW RATED V
CEO
0.01
1.5
2
3
5
7
10
20
30
50 70 100 150
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 10. Active Region Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
MILLIMETERS
E
V
DIM
A
B
C
D
E
MIN
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
0.235
0.250
0.086
0.027
0.033
0.037
4
2
Z
A
K
F
S
1
3
G
H
J
K
L
0.180 BSC
4.58 BSC
U
0.034
0.018
0.102
0.040
0.023
0.114
0.87
0.46
2.60
1.01
0.58
2.89
0.090 BSC
2.29 BSC
F
J
R
S
U
V
0.175
0.020
0.020
0.030
0.138
0.215
0.050
–––
0.050
–––
4.45
0.51
0.51
0.77
3.51
5.46
1.27
–––
1.27
–––
L
H
D 2 PL
Z
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369A–13
ISSUE Z
C
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
E
R
INCHES
MILLIMETERS
4
DIM
A
B
C
D
E
MIN
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
0.235
0.250
0.086
0.027
0.033
0.037
A
K
1
2
3
S
F
–T–
SEATING
PLANE
0.090 BSC
2.29 BSC
G
H
J
K
R
S
0.034
0.018
0.350
0.175
0.050
0.030
0.040
0.023
0.380
0.215
0.090
0.050
0.87
0.46
8.89
4.45
1.27
0.77
1.01
0.58
9.65
5.46
2.28
1.27
J
F
V
H
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
0.13 (0.005)
T
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369–07
ISSUE K
5
Motorola Bipolar Power Transistor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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